Effect of dopant type on the formation of the growth relief of gallium arsenide in a chloride gas-transport system

The effect of dopants (zinc, tellurium) on the microrelief of the growth surface of autoepitaxial gallium arsenide layers is considered. It is shown that the type of dopant exerts a considerable effect on the characteristics of the microstep structure of the surface; the reasons for the reconstruction of the relief under the action of the dopant are analyzed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 44–48, January, 1976.     

Nucleophilic Substitution in 1,5-Benzodiazepin-2-ones

The reaction of 3-bromo-4-phenyl-2,3-dihydro-1H-1,5-benzodiazepin-2-one with cyclic amines gives 3-aminoalkyl-4-phenyl-2,3-dihydro-1H-1,5-benzodiazepin-2-one. Thiazolo[4,5-b][1,5]benzodiazepine was isolated along with the substitution product when thiourea was used.     

Influence of UV Radiation on the Processes Proceeding on the Anthracene Single Crystal Surface

Russian Physics Journal - In this study, the influence of the annealing conditions on the formation of macrosteps on the anthracene single crystal surface is demonstrated. Under normal conditions...     

Simulation of sintering of low-temperature ceramic products formed by additive technology

Computer simulation methods have been applied to study the processes of low-temperature ceramics synthesis corresponding to technological processes. The simulation is performed for micron- and nanosized powders with different morphology. The synthesized composite medium has the characteristics (microlayer thickness, pore volume fraction, etc.) that reflect imperfections in the initial dispersion. The developed model allows one to examine the governing factors of physical and chemical processes in low-temperature ceramics synthesis.     

Reaction of Phenylglyoxal with Cyclopentenylmorpholine and its Arylidene Derivatives

The reaction of phenylglyoxal with cyclopentenylmorpholine and its arylidene derivatives leads to hydroxyalkylation products.     

Study of the Elementary Growth Processes During Vapor-Phase Epitaxy of Semiconducting III–V Compounds

A review of studies performed at the V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University and aimed at obtaining detailed information on the elementary growth processes proceeding at the crystallization front during vapor-phase epitaxy of semiconducting III–V compound films is presented in the paper. The general approach to the problem and methods of its solution are described. Results of investigations of the adsorption layer composition, surface diffusion processes, and incorporation of growth components into a crystal are presented. The mechanism of epitaxial layer growth in semiconducting III–V compounds is discussed.     

Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems

An experimental investigation was made into the growth kinetics and relief of the growth surface for the (111)A, (111)B, (110), and (001) planes of gallium arsenide for different degrees of supersaturation determined by the difference between the temperatures of the source and the substrate. The obtained dependences are interpreted on the basis of the basic conclusions of the theory of the growth of crystals.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 89–93, March, 1981.We are grateful to G. M. Ikonnikovaya for assistance in the experiments.     

Formation of a transition layer during heteroepitaxy of III–V compound semiconductors in gas-phase epitaxy systems

It is known that during gas-phase epitaxy of InP and GaAs the region of the film close to the heteroboundary is formed with altered phase, structural, and electrophysical properties. The main cause for this is formation of a transition layer due to a change in the growth mechanism (transition from nucleational to layer-step growth) and the structure of the growing surface (height and density of growth steps). Tomsk State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 42, No. 1, pp. 18–21, January, 1999.