Studium der Stationären und Laufenden Schichtung in der Entladung in Neon Mit Hilfe eines Lokalen Hochfrequenzfeldes

Zusammenfassung Es wurde ein Verfahren zur Erregung von stationären Schichten, der Schichtungswelle und der laufenden Schichten in der Gleichstromentladung ausgearbeitet, das auf der Einwirkung eines Hochfrequenzfeldes auf einen kurzen Abschnitt der positiven Säule beruht. Dieses Verfahren wurde zum Studium aller drei angeführten Schichtungsarten in Neon benützt, insbesondere jedoch zum Studium des Zusammenhanges zwischen den laufenden und den stationären Schichten.Bei stationären Schichten wurden zweifache Strukturen festgestellt und es wurde deren Abhängigkeit vom Entladungsstrom und von der Größe des erregenden Hochfrequenzfeldes verfolgt.Bei der Schichtungswelle wurde die Stelle deren Entstehung ermittelt und es wurde nachgewiesen, daß das Hochfrequenzfeld diese Welle lokal an der Stelle dessen Einwirkung auf die positive Säule hervorruft.Bei den laufenden Schichten wurde deren Resonanzfrequenz in Abhängigkeit vom Entladungsstrom und die Abhängigkeit der Wellenlänge der Schichten von der Frequenz untersucht.Es wurde festgestellt, daß der extrapolierte Wert der Wellenlänge für die Nullfrequenz erheblich niedriger ist als die Länge der stationären Schichten. Weiter wurde eine Übereinstimmung der Frequenz der laufenden Schichten in der Schichtungswelle mit der Resonanzfrequenz der künstlich hervorgerufenen laufenden Schichten festgestellt.

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ВЛИЯНИЕ СТАРЕНИЯ НА Э ЛЕКТРИЧЕСКИЕ СВОЙСТ ВА ПОЛУПРОВОДНИКОВОЙ С ИСТЕМЫ Bi2Te3-Bi2Se3

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Influence of ageing on change in electrical properties of semiconducting systems of Bi₂Te₃-Bi₂Se₃

The paper describes the effect of ageing observed on a semiconducting system Bi₂Te₃ — Bi₂Se₃. It is shown that the change in electrical conductivity and thermoelectric force, which takes place during ageing, is caused by the change in concentration of the free electrons. The influence of this process on the efficiency of equipment employing the Peltier effect is analyzed.

     

Electric and electrochemical properties of solid LiH2PO4

Electrical and electrochemical properties of solid LiH₂PO₄ conductor were investigated in the temperature range from room temperature to 373 K. It was found that high conductivity throughout the temperature range, with activation energy 17.23 kJ/mol, originates from the movement of hydrogen ions (protons). The movement of protons in the correlation with phosphate groups rotation was considered. The slopes of Tafel lines and exchange current densities both for cathodic hydrogen and anodic oxygen evolution were determined (by means of usual electrochemical kinetic methods) at various temperatures. The energy of activation at the equilibrium potentials both for the cathodic and the anodic processes have been assessed to be 17.23 kJ/mol (0.18 eV) and 2.9 kJ/mol (0.03 eV), respectively.     

The theoretical and experimental study of the ionization processes during the low energy ion sputtering

The process by which atoms are ionized as they are sputtered from a metal surface has been analyzed both theoretically and experimentally. In the theoretical part the expressions for ionization coefficient R⁺ of atoms having the ionization energy much larger than the metal work function have been derived using a molecular orbital method. The effect of the level crossing was estimated in an approximate way. In the experimental part the SIMS experiments on clean Ni and Al surfaces and on Ni surface covered with a submonolayer of adsorbed K, Na and Al are reported. It has been found and it is for the first time reported that the energy distribution of ions sputtered from a submonolayer of adatoms is independent of energy (200–2500 eV) and mass (Ar⁺ Xe⁺ of incident ions and depends only upon the adsorption energy of the adatom. The energy distribution of ions sputtered from bulk samples has been found dependent on the primary ion energy. The measurement of the absolute value of R⁺ has shown that there is a strong correlation between the number of the adatom valence d-electrons and the value of R⁺, the value of R⁺ being smaller for atoms with more d-electrons. These experimental data have been compared with the theoretical expressions and the important role of the mechanism which takes into account the bending of the adatom energy level has been assessed.     

Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions

We have studied ultra-fast carrier dynamics of photo-excited carriers in hydrogenated microcrystalline silicon prepared by a very high frequency glow-discharge technique. We report on direct observation of two types of dynamics using selective photo-excitation in picosecond pump and probe measurements. One type of the observed dynamics has been found to be independent of the sample preparation, while the other reflects the relative weights of crystalline and amorphous fractions. We propose a simple rate-equation model that describes the carrier dynamics in microcrystalline silicon in terms of the composition of those in Si microcrystallites and in the a-Si:H tissue which surrounds the microcrystallites. The model without any fitting parameters reproduces the experimental data very well when the dynamics are scaled with relative volume fractions as obtained from Raman spectra. Received: 23 November 2000 / Accepted: 17 March 2001 / Published online: 23 May 2001     

Generating cryptographically strong Boolean functions using partial information

Periodica Mathematica Hungarica - In our paper we study the usage of partially defined Boolean functions (PDBFs) for generating cryptographically strong Boolean functions. A PDBF can be considered...     

Class number one quadratic fields and solvability of some Pellian equations

Consider these two types of positive square-free integers d≠ 1 for which the class number h of the quadratic field Q(√d) is odd: (1) d is prime∈ 1(mod 8), or d=2q where q is prime ≡ 3 (mod 4), or d=qr where q and r are primes such that q≡ 3 (mod 8) and r≡ 7 (mod 8); (2) d is prime ≡ 1 (mod 8), or d=qr where q and r are primes such that q≡r≡ 3 or 7 (mod 8). For d of type (2) (resp. (1)), let Π be the set of all primes (resp. odd primes) p∈N satisfying (d/p) = 1. Also, let δ :=0 (resp. δ :=1) if d≡ 2,3 (mod 4) (resp. d≡ 1 (mod 4)). Then the following are equivalent: (a) h=1; (b) For every p∈П at least one of the two Pellian equations Z ²-dY ² = ±4^δ p is solvable in integers. (c) For every p∈П the Pellian equation W ²-dV ² = 4^δ p ² has a solution (w,v) in integers such that gcd (w,v) divides 2^δ.     

A wider convergence area for the MSTMAOR iteration methods for LCP

In this paper, based on the Hermitian and skew-Hermitian splitting, we give a generalized modified Hermitian and skew-Hermitian splitting (GMHSS) method to solve singular complex symmetric linear systems, this method has two parameters. We give the semi-convergent conditions, and some numerical experiments are given to illustrate the efficiency of this method.     

Bi(Pb)–Sr–Ca–Cu–O layers prepared by a new method of laser ablation in air

Bi(Pb)–Sr–Ca–Cu–O layers were prepared by laser ablation in air, that is without using a vacuum chamber. At this method a much higher density of pulse energy of laser beam is required (10–30 J cm^–2) in comparison with the standard method (1–3 J cm^–2). The mentioned condition has specific effects on the nature of the transport of material from the target. As follows from the electron microprobe analysis of the layers, the starting composition of the transported material is identical with that of the superconducting phase sintered in the target; one exception represents Pb, the content of which in the transported material is lower. The image of the process is complemented by UV/VIS spectroscopy scans of the plasma plume.