Structural Properties and Hamiltonicity of Neighborhood Graphs

Let G = (V, E) be a simple undirected graph. N(G) =  (V, E _N ) is the neighborhood graph of the graph G, if and only if $$E_N = \{\{a,b\}\,|\, a \neq b\,\wedge\,\exists\, x \, \in V: \{x,a\} \in E \, \wedge \, \{x,b\} \in E \}.$$ We present several structural properties of N(G) and characterize the hamiltonicity of N(G) by means of chords of a hamiltonian cycle in G.     

Structural and electronic implications for carrier injection into organic semiconductors

We report on the structural and electronic interface formation between ITO (indium-tin-oxide) and prototypical organic small molecular semiconductors, i.e., CuPc (copper phthalocyanine) and α-NPD (N,N′-di(naphtalen-1-yl)-N,N′-diphenyl-benzidine). In particular, the effects of in situ oxygen plasma pretreatment of the ITO surface on interface properties are examined in detail: Organic layer-thickness dependent Kelvin probe measurements revealed a good alignment of the ITO work function and the highest occupied electronic level of the organic material in all samples. In contrast, the electrical properties of hole-only and bipolar organic diodes depend strongly on the treatment of ITO prior to organic deposition. This dependence is more pronounced for diodes made of polycrystalline CuPc than for those of amorphous α-NPD layers. X-ray diffraction and atomic force microscopic (AFM) investigations of CuPc nucleation and growth evidenced a more pronounced texture of the polycrystalline film structure on the ITO substrate that was oxygen plasma treated prior to organic layer deposition. These findings suggest that the anisotropic electrical properties of CuPc crystallites, and their orientation with respect to the substrate, strongly affect the charge carrier injection and transport properties at the anode interface.     

Unexpectedly high field-effect mobility of a soluble, low molecular weight oligoquaterthiophene fraction with low polydispersity

Layers made from soluble low molecular weight polythiophene PQT-12 with low polydispersity exhibit a highly ordered structure and charge-carrier mobilities of the order of 10⁻³ cm²/(V s), which we attribute to its proximity to monodispersity. We propose that polydispersity is a decisive factor with regard to structure formation and transport properties of soluble low molecular weight polythiophenes. Electronic Supplementary Material  The online version of this article () contains supplementary material, which is available to authorized users.     

Strangeness at the international Facility for Antiproton and Ion Research

The project of the international Facility for Antiproton and Ion Research (FAIR), co-located to the GSI facility in Darmstadt, was officially started on November 7, 2007. An investment of about 1 billion euro will permit new physics programs in the areas of low and medium energy antiproton research, heavy ion physics complementary to LHC, as well as in nuclear structure and astrophysics. The facility will comprise about a dozen accelerators and storage rings, which will enable simultaneous operations of up to four different beams.     

Mixed‐Valent Europium in the Cubic Thiosilicate Li3Eu6[SiS4]4

In an attempt to synthesize LiEu₃S₃[SiS₄] utilizing elemental europium and sulfur as well as SiS₂ and an excess of LiCl as flux and lithium source, dark red, platelet‐shaped single crystals of Li₃Eu₆[SiS₄]₄ were obtained. This new compound crystallizes in the cubic space group I4 3d (a = 1369.22(5) pm) with four formula units per unit cell. Both the Li⁺ and the Si⁴⁺ cations are surrounded by four sulfide anions. The [SiS₄]^4– tetrahedra show merely a slight trigonal distortion, while the [LiS₄]^7– units are best described as flattened bisphenoids. The europium cations exhibit an eightfold, rather irregular coordination environment by eight S^2– anions and have to be regarded mixed‐valent with a +2:+3 charge‐ratio of 5:1 in order to gain electroneutrality. The lack of an inversion center is caused by the [SiS₄]^4– tetrahedra being stacked exclusively top up along [111] in this acentric crystal structure.     

Perfluorinated tert‐Butoxides of Tin(II): The Dimeric Alkoxide and Its Monomeric Ate Complex

Surprisingly little is known about fluorinated tin(II) alkoxides. Here the synthesis and characterization of Sn(OR^F)₂ [OR^F = OC(CF₃)₃] and the crystal structures of its adducts with phenanthroline and dppe are reported. In addition, its ate complex [Sn(OR^F)₃]^– was synthesized with lithium or sodium as cation and as acetonitrile adduct. The thermolytic behavior of both, the alkoxide and the lithium stannate(II), was investigated together with first electrochemical measurements of Li[Sn(OR^F)₃].     

Using Me3Si–F–Al(ORF)3 and Me3Si–Cl as Methylating Agents – Synthesis and Characterization of SeMeCl2[F{Al(ORF)3}2]

Upon reacting SeCl₄ with Me₃Si–F–Al(OR^F)₃, the selenonium salt SeMeCl₂[al‐f‐al] ( 1 ) {[al‐f‐al]^– = [F[Al(OC(CF₃)₃)₃]₂]^–} was obtained and characterized by NMR, IR, and Raman spectroscopy as well as single crystal XRD experiments. Despite the [SeX₃]⁺ (X = F, Cl, Br, I) and [SeR₃]⁺ salts (R = aliphatic organic residue) being well known and thoroughly studied, the mixed cations are scarce. The only previous example of a salt with the [SeMeCl₂]⁺ cation is SeMeCl₂[SbCl₆], which was never structurally characterized and is unstable in solution over hours. Only ¹H‐NMR studies and IR spectra of this compound are known. The unexpected use of Me₃Si–F–Al(OR^F)₃ as a methylating agent was investigated via DFT calculations and NMR experiments of the reaction solution. The reaction of SeCl₃[al‐f‐al] with Me₃Si‐Cl at room temperature in CH₂Cl₂ proved to yield the same product with Me₃Si–Cl acting as a methylating agent.     

Threshold Photoelectron Spectroscopy of IO and HOI

Iodine oxides appear as reactive intermediates in atmospheric chemistry. Here, we investigate IO and HOI by mass-selective threshold photoelectron spectroscopy (ms-TPES), using synchrotron radiation. IO and HOI are generated by photolyzing iodine in the presence of ozone. For both molecules, accurate ionization energies are determined, 9.71±0.02 eV for IO and 9.79±0.02 eV for HOI. The strong spin-spin interaction in the ³Σ⁻ ground state of IO⁺ leads to an energy splitting into the Ω=0 and Ω=±1 sublevels. Upon ionization, the I−O bond shortens significantly in both molecules; thus, a vibrational progression, assigned to the I−O stretch, is apparent in both spectra.     

Zur Lage des Maximums der Ausbeutekurve bei der Sekundärelektronenemission

There exists a quantitative connection between penetration depth of primary electrons, the maximum escape depth of secondary electrons and the position of the maximum of the yield curve if one assumes: (1) the maximum of the yield curve is determined by an energyE _p ^max of the primary electrons where the maximum penetration depth of primary electrons equals the maximum escape depth of the secondary electrons; and (2) the maximum escape depth of secondary electrons is given by 10 atomic layers for all metals investigated as it has been found earlier by Mayer and Hölzl for potassium. These assumptions are confirmed experimentally by measurements of yield curves and energy distributions at defined conditions and by variation of several parameters as temperature, contamination of the surface, surface roughness, evaporation conditions, and angle of incidence of the primary electrons.