Effect of magnetic field on the TC and magnetic properties for the aligned MnBi compound

In the compound MnBi, a first-order transition from the paramagnetic to the ferromagnetic state can be triggered by an applied magnetic field and the Curie temperature increases nearly linearly with an increase in magnetic field by ∼2 K/T. Under a field of 10 T, T_C increases by 20 and 22 K during heating and cooling, respectively. Under certain conditions a reversible magnetic field or temperature induced transition between the paramagnetic and ferromagnetic states can occur. A magnetic and crystallographic H-T phase diagram for MnBi is given. Magnetic properties of MnBi compound aligned in a Bi matrix have been investigated. In the low temperature phase MnBi, a spin-reorientation takes place during which the magnetic moments rotate from being parallel to the c-axis towards the basal plane at ∼90 K. A measuring Dc magnetic field applied parallel to the c-axis of MnBi suppresses partly the spin-reorientation transition. Interestingly, the fabricated magnetic field increases the temperature of spin-reorientation transition T_s and the change in magnetization for MnBi. For the sample solidified under 0.5 T, the change in magnetization is ∼70% and T_s is ∼91 K.     

Preparation of Fe–Si–B–Nb amorphous powder cores with excellent high-frequency magnetic properties

FeSiBNb amorphous powder cores were prepared with the amorphous powder by gas atomization and subsequent hot pressing of resulting powder after creating oxide layers on the amorphous powder. Fully amorphous FeSiBNb powders with good soft magnetic properties were successfully obtained in the particle size range below 100 μm. FeSiBNb amorphous powder cores exhibit stable permeability up to 10 MHz, showing excellent high-frequency characteristics.     

Use of Cu dopant and it's doping effects on polyaniline conducting system in water and tetrahydrofuran

The structural modification and properties of polymeric materials are of utmost importance in deciding their applications. In the present study, the synthesis of polyaniline (PANI) has been carried out via chemical oxidation in acidic medium by potassium-dichromate and the yield of synthesized polyaniline was found to be 75-80%. The copper per chlorate tetrabenzonitrile salt (CuClO₄·4BN) used for chemical doping in synthesized polyaniline is stable in organic solvent like acetonitrile (AN) and benzonitrile (BN). The effect of Cu⁺¹ oxidation state (dopant) in polyaniline has been characterized by FTIR. Electrical and dielectric measurements show the decrease in the intensity of the Cu⁺¹ salt signal and the appearance of a radical signal due to the formation of oxidative coupled in polymeric species. Electrical and dielectric properties of doped polyaniline samples show significant changes due to the effect of dopant (CuClO₄·4BN). It is observed that the conductivity is contributing both by formation of ionic complex and particularly dominated by electronic due to the mobility of charge carriers along the polyaniline chain.     

激光调Q CAI

从激光调Q速率方程出发,分析推导了激光调Q过程中,腔内光子数与工作物质内反转粒子数间的关系.再根据激光调Q的过程中,对腔Q值控制方式不同,将激光调Q技术分为:转镜调Q、声光调Q、电光调Q、饱和吸收调Q和脉冲透射式调Q.用C语言进行了激光调Q CAI软件的开发研制,获得了将文学、图形、动画和计算融为一体的,直观而生动地将调Q的理论和过程再现于屏幕的CAI课件.介绍了课件的内容、结构及其特点.     

Superconducting energy gap distribution in c-axis oriented MgB2 thin film from point contact study

We have analyzed about a hundred voltage-dependent differential resistance dV/dI(V) curves of metallic point contacts between c-axis-oriented MgB₂ thin film and Ag, which exhibit clear Andreev reflection features connected with the superconducting gap. About one half of the curves show the presence of a second larger gap. The histogram of the double gap distribution reveals distinct maxima at 2.4 and 7 meV, while curves with single-gap features result in a more broad maximum at 3.5 meV. The double-gap distribution is in qualitative agreement with the distribution of gap values over the Fermi surface calculated by H. J. Choi et al. (cond-mat/0111183). The data unequivocally show the presence of two gaps: Δ_S=2.45±0.15 meV and Δ_L=7.0±0.45 meV in MgB₂ with the gap ratio Δ_L/Δ_S=2.85±0.15. Our observations further prove a widely discussed multigap scenario for MgB₂, where two distinct gaps are seen in the clean limit, while a single averaged gap is present in the dirty one.     

离子交换富集-导数火焰原子吸收法测定自来水中Cu,Fe和Zn

本文研究了用 2 0 1× 7阳离子交换树脂对自来水中的微量元素进行交换富集 ,采用微量脉冲进样 导数火焰原子吸收法测定富集后溶液中的Cu ,Fe和Zn ,该方法灵敏度分别为 0 2 9,0 5 9和 0 0 6 μg·L- 1 ,精密度分别为 4 2 8% ,1 95 %和 2 2 8% ,检测限分别为 1 2 8,5 85和 0 6 8μg·L- 1 ,回收率分别为 91 13% ,10 1 34%和99 84 % ,本方法大大减少了需样量 ,简便快速 ,灵敏度高。     

N_2和O_2纯转动拉曼光谱(PRRS)的温度特性

计算了N2 和O2 的PRRS ,讨论了其温度特性。提出通过测量N2 和O2 的PRRS计算大气温度的方法。     

Molecular dynamics simulation study on graphene-nanoribbon-resonators tuned by adjusting axial strain

A tunable graphene-nanoribbon (GNR)-resonator was investigated via classical molecular dynamics simulations. Resonance frequencies increased with increasing externally applied gate-force and axial-strain, and could be tuned above several hundred GHz. Tunable resonance frequencies achieved from the gate force were higher than those achieved from the axial-strain. The operating frequencies of GNR-resonators without axial-strain or with small axial-strains were most widely tuned by the gate, and almost linearly increased with increasing mean deflection. As the axial strain increased, the tunable ranges of the GNR-resonators were exponentially decreased, although the operating frequencies increased. GNR-resonators without axial-strain could be applied to wide-range-tuners, whereas GNR-resonators with high axial-strain could be applied to high-frequency-fine-tuners.     

Forming process of unipolar resistance switching in Ta2O5−x thin films

We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, E_F, required to initiate unipolar resistance switching (URS) in Ta₂O_5?x thin films. We measured the dependence of E_F by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v = 20 mV s^?1 to 5 MV s^?1). Our results showed that the URS-E_F was not influenced by the Ta₂O_5?x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta₂O_5?x thin films should be governed by thermally assisted dielectric breakdown in our measurement range.     

Band gap tunable and improved microstructure characteristics of Cu2ZnSn(S1−x,Sex)4 thin films by annealing under atmosphere containing S and Se

Cu₂ZnSn(S_xS_1?x)₄ (CZTSSe) thin films were prepared by annealing a stacked precursor prepared on Mo coated glass substrates by the sputtering technique. The stacked precursor thin films were prepared from Cu, SnS₂, and ZnS targets at room temperature with stacking orders of Cu/SnS₂/ZnS. The stacked precursor thin films were annealed using a tubular two zone furnace system under a mixed N₂ (95%) + H₂S (5%) + Se vaporization atmosphere at 580 °C for 2 h. The effects of different Se vaporization temperature from 250 °C to 500 °C on the structural, morphological, chemical, and optical properties of the CZTSSe thin films were investigated. X-ray diffraction patterns, Raman spectroscopy, and X-ray photoelectron spectroscopy results showed that the annealed thin films had a single kesterite crystal structure without a secondary phase. The 2θ angle position for the peaks from the (112) plane in the annealed thin films decreased with increasing Se vaporization temperature. Energy dispersive X-ray results showed that the presence of Se in annealed thin films increased from 0 at% to 42.7 at% with increasing Se vaporization temperatures. UV–VIS spectroscopy results showed that the absorption coefficient of all the annealed thin films was over 10⁴ cm^?1 and that the optical band gap energy decreased from 1.5 eV to 1.05 eV with increasing Se vaporization temperature.