Nonlinear optical characteristics of monolayer MoSe2

In this study, we utilized picosecond pulses from an Nd:YAG laser to investigate the nonlinear optical characteristics of monolayer MoSe₂. Two‐step growth involving the selenization of pulsed‐laser‐deposited MoO₃ film was employed to yield the MoSe₂ monolayer on a SiO₂/Si substrate. Raman scattering, photoluminescence (PL) spectroscopy, and atomic force microscopy verified the high optical quality of the monolayer. The second‐order susceptibility χ⁽²⁾ was calculated to be ～50 pm V^?1 at the second harmonic wavelength ～810 nm, which is near the optical gap of the monolayer. Interestingly, our wavelength‐dependent second harmonic scan can identify the bound excitonic states including negatively charged excitons much more efficiently, compared with the PL method at room temperature. Additionally, the MoSe₂ monolayer exhibits a strong laser‐induced damage threshold ～16 GW cm^?2 under picosecond‐pulse excitation_. Our findings suggest that monolayer MoSe₂ can be considered as a promising candidate for high‐power, thin‐film‐based nonlinear optical devices and applications.     

Temperature‐dependent Raman scattering study of multiferroic MnWO4

We have measured polarized Raman spectra of MnWO₄ single crystals at low temperatures, and studied the temperature dependence of the various phonon modes. From our Raman studies of the MnWO₄, a new transition temperature, ∼180 K, was found. We have completely assigned the symmetries of the 18 observed Raman modes of the MnWO₄, as expected from a group theoretical analysis. These Raman modes have been classified into three groups according to weak, intermediate and strong temperature dependence of the modes in each group. Six internal modes have been identified by their weak temperature dependence of the Raman wavenumbers. The temperature dependence of the wavenumbers of the B_g modes in Mg O bonds, modes of intermediate temperature dependence group, shows an anomalous behavior under 50 K. The phonon modes of strong temperature dependence show an anomalous change at ∼180 K in the linewidths. This is believed to be a new transition temperature which involves the changes in the inter‐WO₆ octahedra structure. Copyright © 2009 John Wiley & Sons, Ltd.     

Mössbauer Studies and Magnetic Properties of Y3−x Ce x Fe5O12

It is shown that in-situ ^166mHo (I = 7) in a spherical single crystal of HoF₃ can be used as sensitive internal thermometer to thermally detect NMR (NMR-TDNO) from the 100% abundant stable ¹⁶⁵Ho (I = 7/2) nuclei. In addition, new ^166mHo NMRON results are reported. Both the ^166mHo NMRON and ¹⁶⁵Ho NMR-TDNO spectra show three distinct quadrupolar split sub-resonances, in zero applied field. The data is used to make estimates of the Ho magnetic moments and quadrupole parameters for the ^166mHo and ^166mHo sites.     

High power efficiency in single layer blue phosphorescent organic light-emitting diodes

High efficiency single layer blue phosphorescent organic light-emitting diodes (PHOLEDs) without any charge transport layer were developed. A mixed host of spirobifluorene based phosphine oxide (SPPO13) and 1, 1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) was used as the host in the emitting layer. A high maximum external quantum efficiency of 15.8% and a quantum efficiency of 8.6% at 1000 cd/m² were achieved in the single-layer blue PHOLEDs without any charge transport layer. The maximum power efficiency and power efficiency at 1000 cd/m² were 31.4 and 16.9 lm/W, respectively.     

Enhanced luminescence in ZnGa<Subscript>2</Subscript>O<Subscript>4-x</Subscript>S<Subscript>x</Subscript>:Mn<Superscript>2+</Superscript> thin-film phosphors grown on MgO(100) substrate

Mn-doped ZnGa₂O_4-xS_x thin-film phosphors have been grown using a pulsed laser deposition technique at varying growth conditions. Structural characterization was carried out on a series of ZnGa₂O_4-xS_x:Mn²⁺ films grown on MgO(100) substrates using Zn-rich ceramic targets. Oxygen pressure was fixed at 100 mTorr and substrate temperatures were varied from 500 to 700 °C. The results of X-ray-diffraction patterns showed that the lattice constants of the ZnGa₂O_3.95S_0.05:Mn²⁺ thin films decrease with the substitution of sulfur for the oxygen in ZnGa₂O₄. Measurements of photoluminescence (PL) properties of ZnGa₂O_4-xS_x:Mn²⁺ thin films have indicated that MgO(100) is one of the most promising substrates for the growth of high-quality ZnGa₂O_4-xS_x:Mn²⁺ thin films. In particular, the incorporation of sulfur into the ZnGa₂O₄ lattice could induce a remarkable increase of PL. The highest green-emission intensity was observed with ZnGa₂O_3.95S_0.05:Mn²⁺ films, whose brightness was increased by a factor of 3.5 in comparison with that of ZnGa₂O₄:Mn²⁺ films. This phosphor may be promising for application to flat-panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Effects of device resolution on three-dimensional integral imaging

We present the effects of a finite number of pixels in elemental images on the resolution and the depth of focus in three-dimensional integral imaging (II). We show that the number of pixels in elemental images determines not only the lateral resolution but also the depth resolution. The minimum number of pixels required in each elemental image is calculated to avoid depth-of-focus degradation. We evaluate how II system performance degrades as the number of pixels in each elemental image changes. The product of the depth of focus and the lateral resolution squared is used as the performance metric.     

Mobility of electrons and holes in an n-type organic semiconductor perylene diimide thin film

N,N′-diphenylbutyl-3,4,9,10-perylenebiscarboximide (PTCDI-C4Ph) were characterized by optical and electrochemical methods. A device with an ITO/PTCDI-C4Ph (≈2 μm)/Al structure was fabricated to measure mobility by time-of-flight techniques. This vacuum deposited organic layer was an amorphous state. Electrons were observed faster than holes. The electron and hole mobilities were 1.8 × 10⁻⁴ cm²/V s and 1.1 × 10⁻⁴ cm²/V s under the electric field of 500 (V/cm)^1/2, respectively. This result shows that this organic compound is a good candidate for an n-type conduction.     

Self-dual Chern–Simons Vortices on Bounded Domains

In this Letter we consider the Abelian Chern–Simons vortices on a bounded simply connected domain. We establish the existence of solutions for the self-duality equations. We prove the uniqueness of solutions when all the vortex points are equal and the domain is star-shaped. We also show the radial symmetry of solutions on balls centered at the vortex point.     

Abnormal adsorption behavior of dimethyl disulfide on gold surfaces

Adsorption of dimethyl disulfide (DMDS) on gold colloidal nanoparticle surfaces has been examined to check its binding mechanism. Differently from previous results, DMDS molecules adsorbed on the gold surface at high concentration showed the S–S stretching band at 500 cm⁻¹ in surface-enhanced Raman scattering (SERS) spectra, which indicates the presence of intact adsorption of DMDS molecules. However, it was found that the S–S bond of disulfides was easily cleaved on the gold surface at low concentration. These behaviors were not observed for diethyl disulfide (DEDS) or diphenyl disulfide (DPDS). Our results indicate that DMDS molecules with the shortest alkyl chains on the gold surface can be inserted into self-assembled monolayers (SAMs) without the S–S bond cleavage during self-assembly due to insufficient lateral van der Waals interaction and the low adsorption activity of disulfides, whereas DEDS with longer alkyl chains or DPDS with the weak disulfide bond dissociation energy would not. These unusual DMDS adsorption behaviors were examined by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). We also compared the bonding dissociation energy of the S–S bonds of various disulfides by means of a density functional theory (DFT) calculation.