The Protective Effect of Violaxanthin from Nannochloropsis oceanica against Ultraviolet B‐Induced Damage in Normal Human Dermal Fibroblasts

Skin photoaging, which is mainly induced by ultraviolet B (UVB) radiation, is prevented by the application of UV‐protective agents. The microalga Nannochloropsis oceanica (N. oceanica) has been primarily reported as a potential biofuel; however, in this study, we investigated whether N. oceanica extracts exerted photoprotective effects against UVB‐irradiated human dermal fibroblasts (HDFs) and which single component was responsible for the protective effect of the extracts. Two extracts—pigment and nonpigment—were prepared from N. oceanica biomass. WST‐1 assay and expression analysis of interleukin genes showed that the pigment extracts were not significantly cytotoxic to HDFs. Further experiments revealed that treatment with the pigment extract upregulated the expression of collagen genes and significantly blocked UVB‐induced damage such as decreased cell viability and increased ROS production. Next, to investigate the pigment composition of the extracts, HPLC analysis was conducted and violaxanthin was identified as the major pigment. The UVB photoprotective effect of the pigment extracts was confirmed in violaxanthin‐treated HDFs. In addition, violaxanthin significantly attenuated UVB‐induced G1 phase arrest, senescence‐associated β‐galactosidase activation, p16 and p21 upregulation, ERK phosphorylation and the downregulation of ECM molecules in HDFs. Therefore, we concluded that violaxanthin was a potential antiphotoaging agent.     

Visualization of Intra‐neuronal Motor Protein Transport through Upconversion Microscopy

Cargo transport along axons, a physiological process mediated by motor proteins, is essential for neuronal function and survival. A current limitation in the study of axonal transport is the lack of a robust imaging technique with a high spatiotemporal resolution to visualize and quantify the movement of motor proteins in real‐time and in different depth planes. Herein, we present a dynamic imaging technique that fully exploits the characteristics of upconversion nanoparticles. This technique can be used as a microscopic probe for the quantitative in situ tracking of retrograde transport neurons with single‐particle resolution in multilayered cultures. This study may provide a powerful tool to reveal dynamic neuronal activity and intra‐axonal transport function as well as any associated neurodegenerative diseases resulting from mutation or impairment in the axonal transport machinery.     

Liquid crystal alignment on ion-beam irradiated bismuth-doped tin oxide films and their application to liquid crystal displays

Uniform and defect-free homogeneous alignment of liquid crystal (LC) molecules on solution-derived bismuth-doped tin oxide (TBO) films has been achieved using ion-beam (IB) irradiation. We performed measurements and physicochemical analysis to verify and establish the cause of the successful LC alignment. In addition, we measured the electro-optical characteristics of twisted-nematic cells with IB-irradiated TBO films to explore the suitability of this material for liquid crystal displays (LCDs). The results indicate that this approach will allow the fabrication of high-performance enhanced LCD devices.     

General solvation motifs of a charged linear macroion in an aqueous droplet

ABSTRACT

We explore the solvation patterns of a charged rigid and semi-rigid linear macroion in an aqueous droplet. The solvation patterns are summarised in an empirical ‘phase diagram’ on the parameter space defined by the length of the macroion and its charge density. In the study, we employ molecular dynamics and atomistic modelling. The macroion is represented by a positively charged carbon nanotube. Linear macroion-solvent interactions in droplets are distinct from those of spherical ions because of the interplay among several factors such as the tendency of the solvent to form spherical droplets in order to minimise the surface energy, the constraint on the charge of a spherical droplet imposed by the Rayleigh limit, the solvation energy of the macroion and its length. The combination of all these factors may lead to a variety of solvent distributions along the rigid rod such as asymmetric solvation of the linear macroion, formation of spiky ‘star’-like distribution of solvent, partial wetting of the rod by a droplet. The study provides insight into the solvation of macroions in droplets with applications in electrosprayed macroions and atmospheric aerosols. We also propose a possible path of generating a sequence of nanoparticles of different shapes (spheres, multi-point stars) along a linear macromolecule by exploiting the various solvation patterns.     

Landau–Ginzburg theory for ‘star’-shaped droplets

ABSTRACT

Molecular simulations have shown that when a nano-drop comprising a single spherical central ion and a dielectric solvent is charged above a well-defined threshold, it acquires a stable star morphology. A linear continuum model of the ‘star’-shapes comprised electrostatic and surface energy is not sufficient to describe these shapes. We employ combined molecular dynamics, continuum electrostatics and macroscopic modelling in order to construct a unified free energy functional that describes the observed star-shaped droplets. We demonstrate that the Landau free energy coupled to the third-order Steinhardt invariant mimics the shapes of droplets detected in molecular simulations. Using the maximum likelihood technique we build a universal free energy functional that describes droplets for a range of Rayleigh fissility parameter. The analysis of the macroscopic free energy demonstrates the origin of the finite amplitude perturbations just above the Rayleigh limit. We argue that the presence of the finite amplitude perturbations precludes the use of the small parameter perturbation method for the analysis of the shapes above the Rayleigh limit of the corresponding spherical shape.     

InAs/GaSb strained layer superlattice detectors with nBn design

We have investigated the electrical and optical properties of an nBn based Type-II InAs/GaSb strained layer superlattice detector as a function of absorber region background carrier concentration. Temperature-dependent dark current, responsivity and detectivity were measured. At T = 77 K and V_b = 0.1 V, with two orders of magnitude change in doping concentration, the dark current density increased from ～0.3 mA/cm² to ～0.3 A/cm². We attribute this to a depletion region that exists at the AlGaSb barrier and the SLS absorber interface. The device with non-intentionally doped absorption region demonstrated the lowest dark current density (0.3 mA/cm² at 0.1 V) with a specific detectivity D¹ at zero bias equal to 1.2 × 10¹¹ Jones at 77 K. The D¹ value decreased to 6 × 10¹⁰ cm Hz^1/2/W at 150 K. This temperature dependence is significantly different from conventional PIN diodes, in which the D¹ decreases by over two orders of magnitude from 77 K to 150 K, making nBn devices a promising alternative for higher operating temperatures.     

Photoresponsive conductance switching of multi-walled carbon nanotubes bearing covalently linked spironaphthoxazine

Multi-walled carbon nanotubes functionalized with a photochromic spironaphthoxazines (MWCNTs-SPO) were synthesized by the reaction between the hydroxyl group of SPO and the carbonyl chloride groups on the surface of MWCNTs. The functional spirooxazine photochromic groups on the surface of MWCNTs were identified by the X-ray photoelectron spectroscopy. As a novel derivative of MWCNTs, photoresponsive conductance switching of the MWCNTs-SPO was demonstrated under a 365 nm UV light irradiation. A simple photoinduced resistance measurement following the cyclic irradiation of UV light shows a very reversible response. The effect of the electron injection in the SPO is rationalized in terms of the HOMO–LUMO energy levels of both spiro and merocyanine forms.     

Efficiency characteristics of a silicon oxide passivation layer on p-type crystalline silicon solar cell at low illumination

Silicon dioxide (SiO₂) is widely used to improve the surface passivation properties of silicon solar cells. To minimize solar cell potential-induced degradation when the PV module is installed outdoors, a silicon oxide film is widely used as an insulator. However, experiments have confirmed that solar cells with a silicon oxide (SiO₂) film have a lower efficiency than solar cells without a silicon oxide (SiO₂) film at low illumination (<0.4 sun). Actually, the efficiency in the low illumination condition affects the average power output per day because the PV module mostly operates when the solar irradiation dose is less than 1 sun. To maximize the performance of the PV module, the output at a low light intensity level should also be considered. Shunt resistance (R_shunt) is known to cause a decrease in solar cell efficiency under low illumination conditions. PC1D simulation was used to analyze parameters, such as the series resistance, parallel resistance, and surface recombination, that affect the characteristics of the solar cell at low light intensity. In this study, we confirmed how the SiO₂ layer affected the low illumination properties of solar cells, even though these cells were more efficient at 1 sun. Silicon solar cells with a SiN_x/SiO₂ bilayer or a SiN_x single film were fabricated, and their characteristics were evaluated. Passivation characteristics were measured using the quasi-steady-state photoconductance (QSSPC) technique to evaluate the minority carrier lifetime and the implied open-circuit voltage (V_OC), and capacitance-voltage measurements were used to analyze the fixed charges. The values of the shunt resistance and series resistance in solar cells with different passivation layers were compared, and the cause of the decrease in the efficiency under low illumination was also analyzed via fill factor calculation.     

Investigation of interface characteristics of Al2O3/Si under various O2 plasma exposure times during the deposition of Al2O3 by PA-ALD

Plasma-assisted atomic layer deposition (PA-ALD) is more suitable than thermal atomic layer deposition (ALD) for mass production because of its faster growth rate. However, controlling surface damage caused by plasma during the PA-ALD process is a key issue. In this study, the passivation characteristics of Al₂O₃ layers deposited by PA-ALD were investigated with various O₂ plasma exposure times. The growth per cycle (GPC) during Al₂O₃ deposition was saturated at approximately 1.4?Å/cycle after an O₂ plasma exposure time of 1.5?s, and a refractive index of Al₂O₃ in the range of 1.65–1.67 was obtained. As the O₂ plasma exposure time increased in the Al₂O₃ deposition process, the passivation properties tended to deteriorate, and as the radio frequency (RF) power increased, the passivation uniformity and the thermal stability of the Al₂O₃ layer deteriorated. To study the Al₂O₃/Si interface characteristics, the capacitance-voltage (C-V) and the conductance-voltage (G-V) were measured using a mercury probe, and the fixed charge density (Q_f) and the interface trap density (D_it) were then extracted. The Q_f of the Al₂O₃ layer deposited on a Si wafer by PA-ALD was almost unaffected, but the D_it increased with O₂ plasma exposure time. In conclusion, as the O₂ plasma exposure time increased during Al₂O₃ layer deposition by PA-ALD, the Al₂O₃/Si interface characteristics deteriorated because of plasma surface damage.