Athermal migration of vacancies in iron and copper induced by electron irradiation

Abstract

Irradiation with high-energy particles induces athermal migration of point defects, which affects defect reactions at low temperatures where thermal migration is negligible. We conducted molecular dynamics simulations of vacancy migration in iron and copper driven by recoil energies under electron irradiation in a high-voltage electron microscope. Minimum kinetic energy required for migration was about 0.8 and 1.0 eV in iron and copper at 20 K, which was slightly higher than the activation energy for vacancy migration. Around the minimum energy, the migration succeeded only when a first nearest neighbour (1NN) atom received the kinetic energy towards the vacancy. The migration was induced by higher kinetic energies even with larger deflection angles. Above several electron-volts and a few 10s of electron-volts, vacancies migrated directly to 2NN and 3NN sites, respectively. Vacancy migration had complicated directional dependence at higher kinetic energies through multiple collisions and replacement of atoms. The probability of vacancy migration increased with the kinetic energy and remained around 0.3–0.5 jumps per recoil event for 20–100 eV. At higher temperatures, thermal energies slightly increased the probability for kinetic energies less than 1.5 eV. The cross section of vacancy migration was 3040 and 2940 barns for 1NN atoms in iron and copper under irradiation with 1.25 MV electrons at 20 K: the previous result was overestimated by about five times.     

Re-entrant phase transitions of the Blume-Emery-Griffiths model

We have investigated the spin-1 Ising model on the simple cubic lattice with bilinear, biquadratic interaction and anisotropic energy (BEG model). We have been specially interested in the case of antiferro biquadratic interaction, because the interaction will cause the competition with bilinear interaction and anisotropy. A two-sublattice ordering, so called the staggered quadrupole (SQ) phase, occurs as long as biquadratic interaction is negative large enough. We have obtained a full phase diagram in the whole interaction parameter space (for the positive bilinear interaction) by the Bethe approximation, and found several kinds of phase transitions, such as successive, re-entrant and double re-entrant transitions. These transitions are also confirmed by Monte Carlo simulations on simple cubic lattices.     

Control of diameter of ZnO nanorods grown by chemical vapor deposition with laser ablation of ZnO

We made a study of controlling diameters of well-aligned ZnO nanorods grown by low-pressure thermal chemical vapor deposition combined with laser ablation of a sintered ZnO target, which was developed by us. Until now, it has been impossible to control diameters of ZnO nanorods, while the growth orientation was maintained well-aligned. In this study we developed a multi-step growth method to fabricate well-aligned nanorods whose diameters could be controlled. Metal Zn vapor and O₂ are used as precursors to grow ZnO nanorods. N₂ is used as a carrier gas for the precursors. A substrate is an n-Si (111) wafer. A sintered ZnO target is placed near the substrate and ablated by a Nd–YAG pulsed laser during ZnO nanorod growth. The growth temperature is 530 C and the pressure is 66.5 Pa. A vertical growth orientation of ZnO nanorods to the substrate is realized in the first-step growth although the diameter cannot be controlled in this step. When an O₂ flow rate is 1.5 sccm, well-aligned nanorods with 100 nm diameter are grown. Next, the second-step nanorods are grown on only the flat tip of the first-step nanorods. The diameters of the second-step nanorods can be controlled by adjusting the O₂ flow rate, and the growth direction is kept the same as that of the first-step nanorods. When the O₂ flow rate in second-step growth is smaller than 0.6 sccm, the diameter of the second-step nanorods is 30–50 nm. When the O₂ flow rate is between 0.75 and 3.0 sccm, the diameter is almost same as that of the first-step nanorods. When the O₂ flow rate is larger than 4.5 sccm, the diameter is increased with increasing O₂ flow rate. Further, the third-step ZnO nanorods with gradually increased diameters can be grown on the second-step nanorods with 1.5 sccm O₂ flow rate and without laser ablation.     

Phase structure of a U(1) lattice gauge theory with dual gauge fields

We introduce a U(1) lattice gauge theory with dual gauge fields and study its phase structure. This system is partly motivated by unconventional superconductors like extended s-wave and d  -wave superconductors in the strongly-correlated electron systems and also studies of the t–J$t\text{–}J$ model in the slave-particle representation. In this theory, the “Cooper-pair” (or RVB spinon-pair) field is put on links of a cubic lattice due to strong on-site repulsion between original electrons in contrast to the ordinary s  -wave pair field on sites. This pair field behaves as a gauge field dual to the U(1) gauge field coupled with the hopping of electrons or quasi-particles of the t–J$t\text{–}J$ model, holons and spinons. By Monte Carlo simulations we study this lattice gauge model and find a first-order phase transition from the normal state to the Higgs (superconducting) phase. Each gauge field works as a Higgs field for the other gauge field. This mechanism requires no scalar fields in contrast to the ordinary Higgs mechanism. An explicit microscopic model is introduced, the low-energy effective theory of which is viewed as a special case of the present model.     

Beta-NMR measurement of 58Cu in Si

The β-NMR study of short-lived nucleus ⁵⁸Cu (I ^π ?=?1^?+?, T _1/2?=?3.2 s) in Si has been performed. Spin polarization of ⁵⁸Cu induced by the charge exchange reaction of ⁵⁸Ni was observed in Si at 15 K. The ⁵⁸Cu magnetic moment $|\upmu[^{58}\mbox{Cu}]| = (0.46 \pm 0.03)\upmu_{\rm N}$ deduced from the β-NMR spectrum is consistent with the previous results on the laser spectroscopy. The present result shows that the ⁵⁸Cu nucleus is promising as a new nuclear probe for the microscopic study of Cu impurities in Si.     

One-dimensional migration of interstitial clusters in SUS316L and its model alloys at elevated temperatures

For self-interstitial atom (SIA) clusters in various concentrated alloys, one-dimensional (1D) migration is induced by electron irradiation around 300 K. But at elevated temperatures, the 1D migration frequency decreases to less than one-tenth of that around 300 K in iron-based bcc alloys. In this study, we examined mechanisms of 1D migration at elevated temperatures using in situ observation of SUS316L and its model alloys with high-voltage electron microscopy. First, for elevated temperatures, we examined the effects of annealing and short-term electron irradiation of SIA clusters on their subsequent 1D migration. In annealed SUS316L, 1D migration was suppressed and then recovered by prolonged irradiation at 300 K. In high-purity model alloy Fe-18Cr-13Ni, annealing or irradiation had no effect. Addition of carbon or oxygen to the model alloy suppressed 1D migration after annealing. Manganese and silicon did not suppress 1D migration after annealing but after short-term electron irradiation. The suppression was attributable to the pinning of SIA clusters by segregated solute elements, and the recovery was to the dissolution of the segregation by interatomic mixing under electron irradiation. Next, we examined 1D migration of SIA clusters in SUS316L under continuous electron irradiation at elevated temperatures. The 1D migration frequency at 673 K was proportional to the irradiation intensity. It was as high as half of that at 300 K. We proposed that 1D migration is controlled by the competition of two effects: induction of 1D migration by interatomic mixing and suppression by solute segregation.