Coating of optical fibers with a conical shape applicator

Primary emphasis is placed on the effects of coating parameters such as coating thickness and tip size, the coating thickness variations due to different draw speeds, and induced maximum shear rate in the applicator. However, in this analysis the flow region is divided into two because of the mixed boundary conditions: non-slip condition (region I) and free shear condition along the meniscus (region II). The surface tension at the edge in region II is balanced with the pressure difference, which becomes a constraint for the flow rate.     

Description of even-even Krypton isotopes by the Interacting Boson Approximation

Energy spectra andB(E2) values of the even-even Kr isotopes^74–82Kr have been analyzed in terms of the IBA-2 model of Otsuka, Arima and Iachello [6, 7]. We can reproduce the variation of collectivity along the isotope chain by means of a consistent set of 5 parameters, essentially only one of them has been varied with neutron number. The low lying 0 ₂ ⁺ states have been found to be strongly influenced by shell effects. Predictions are given for the not yet observed gamma bands of^74,76Kr.     

Nuclear acoustic resonance in metals

A comprehensive quantum theoretical treatment of nuclear acoustic resonance (NAR) in metals is presented for the first time. Basic equations describing the NAR-absorption and NAR-dispersion are derived from the sound induced perturbation Hamiltonian Ih(t) by applying a generalized form of the Kubo susceptibility. It is shown that in metals, where a sound wave may induce nuclear magnetic dipole and nuclear electric quadrupole transitions simultaneously, the appearance of interference terms enables one to determine not only the absolute values but also the signs of the gradient-elastic tensor components. Explicit expressions are displayed for the dipolar, quadrupolar and interference contributions to the generalized NAR susceptibility in cubic metals. As an example the derivative of the expected⁹³Nb NAR-absorption line (|m|=1) is calculated for different signs of the gradient elastic tensor componentS ₄₄.     

Laser-Rf double-resonance studies of the hyperfine structure of metastable atomic states of55Mn

The hyperfine structure (hfs) of the metastable atomic states 3d⁶4s⁶ D _{1/2, 3/2, 5/2, 7/2, 9/2} of⁵⁵Mn was measured using theABMR- LIRF method (atomicbeammagneticresonance, detected bylaserinducedresonancefluorescence). The hfs constantsA andB, corrected for second order hfs perturbations, could be derived from these measurements. The theoretical interpretation of these correctedA- andB-factors was performed in the intermediate coupling scheme taking into account the configurations 3d ⁵4s ², 3d ⁶4s and 3d ⁷. Examining the influence of the composition of the eigenvectors on the hfs parameters \(\left\langle {r^{ - 3} } \right\rangle ^{k_s k_l } \) it was found, that for the configuration 3d ⁶4s the two-body magnetic interaction should be considered in the calculation of the eigenvectors. Investigating second order electrostatic configuration interactions and relativistic effects and using calculated relativistic correction factors we obtained for the nuclear quadrupole moment of the nucleus⁵⁵Mn a value ofQ=0.33(1) barn, which is not perturbed by a shielding or antishielding Sternheimer factor. The following hfs constants have been obtained: $$\begin{gathered} A\left( {{1 \mathord{\left/ {\vphantom {1 2}} \right. \kern-\nulldelimiterspace} 2}} \right) = 882.056\left( {12} \right)MHz \hfill \\ A\left( {{3 \mathord{\left/ {\vphantom {3 2}} \right. \kern-\nulldelimiterspace} 2}} \right) = 469.391\left( 7 \right)MHzB\left( {{3 \mathord{\left/ {\vphantom {3 2}} \right. \kern-\nulldelimiterspace} 2}} \right) = - 65.091\left( {50} \right)MHz \hfill \\ A\left( {{5 \mathord{\left/ {\vphantom {5 2}} \right. \kern-\nulldelimiterspace} 2}} \right) = 436.715\left( 3 \right)MHzB\left( {{5 \mathord{\left/ {\vphantom {5 2}} \right. \kern-\nulldelimiterspace} 2}} \right) = - 46.769\left( {30} \right)MHz \hfill \\ A\left( {{7 \mathord{\left/ {\vphantom {7 2}} \right. \kern-\nulldelimiterspace} 2}} \right) = 458.930\left( 3 \right)MHzB\left( {{7 \mathord{\left/ {\vphantom {7 2}} \right. \kern-\nulldelimiterspace} 2}} \right) = 21.701\left( {40} \right)MHz \hfill \\ A\left( {{9 \mathord{\left/ {\vphantom {9 2}} \right. \kern-\nulldelimiterspace} 2}} \right) = 510.308\left( 8 \right)MHzB\left( {{9 \mathord{\left/ {\vphantom {9 2}} \right. \kern-\nulldelimiterspace} 2}} \right) = 132.200\left( {120} \right)MHz \hfill \\ \end{gathered} $$      

Renormalized perturbation theory of the Van der Pol oscillator

The renormalized perturbation expansion for the linewidth of the Van der Pol oscillator is extended to fifth order. The results of the previously obtained fourth order are thereby improved for pump strengthsa5. No indication of a breakdown of the expansion, even for strong pumping, is found.     

Infrared and Raman study of Si2Te3

Results of ir and Raman investigations on trigonal layer-structured Si₂Te₃ single crystals are reported. The ir reflection spectrum withEc exhibits seven reststrahl-like bands, whereas the corresponding spectrum withEc shows only one very small bump. Values for ₀ and are given. The Raman spectra are very rich in structure and can only be interpreted qualitatively as being a mixture of single phonon lines and one- and two-phonon density-of-states contributions. One-phonon density-of-states effects are disorder-induced owing to the statistical occurrence of the Si atoms within the regular hexagonal Te sublattice.     

Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF<Subscript>2</Subscript>/Si/CaF<Subscript>2</Subscript> structures

The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF₂/Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of CaF₂ layers. Possible reasons which for the disruption of 2D growth at high substrate temperatures are discussed.     

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.