The plane contact problem of steady thermoelasticity taking heat generation into account

The plane steady contact problem of thermoelasticity when there is heat generation from friction, which arises when an infinite cylindrical punch moves over the surface of an elastic half-space along its generatrix, is considered. It is assumed that heat exchange between the free boundary of the half-space and the surrounding medium obeys Newton's law, while the condition for ideal thermal contact exists in the region in which the solids interact. The problem is reduced to a system of three integral equations in the heat fluxes and temperature. The effect of the thermal and mechanical properties of the cylinder and the half-space on the main contact characteristics is investigated numerically.     

Thickness and temperature dependence of subsidiary absorption thresholds in yttrium-iron-garnet thin films

The microwave subsidiary absorption threshold in tangentially magnetized yttrium-iron-garnet (YIG) films was measured as a function of the static magnetic field, film thickness and decrease in the 0.3–3 μm range is observed. The effect is explained quantitatively by using modified Damon-Eshbach dispersion relations which take into account exchange interactions.

The effect of temperature on h_crit, the smallest threshold field amplitude, in the 250<T< 450 K temperature range can be expressed by an empirical relationship h_crit M_s(T)^-1.6 where M_s is the saturation magnetization. This h_crit vs M_s relationship is similar to that obtained for the magnetization dependence of parallel pump thresholds in Li-Ti ferrite compounds.     

Parasupersymmetric quantum mechanics of arbitrary order withN parasupercharges

Parasupersymmetric quantum mechanics is generalized to the case of an arbitrary number of parasuperchanrgesN and the order of paraquantizationp. We show that parasuperpotentials can be explicitly expressed via a single arbitrary function. Institute of Mathematics, Ukrainian Academy of Sciences, Kiev. Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 48, No. 9, pp. 1291–1294, September, 1996.     

Inclusive production of neutral vector mesons in hadronic Z decays

A data sample of about 3.0 million hadronicZ decays collected by the ALEPH experiment at LEP in the years 1991 through 1994 is used to make an inclusive selection of B hadron events. In this event sample 4227±140±252B* mesons in the decayB*→Bγ and 1944±108±161B** _u,d mesons decaying into a B meson and a charged pion are reconstructed. Here and in the followingB** _u,d denotes the eightL=1(bū) and (bd) states and their charge conjugate. For the well establishedB* meson the following quantities are obtained:ΔM=M _B*−M_B=(45.30±0.35±0.87) MeV/c² andN _B*/(N _B+N _B*)=(77.1±2.6±7.0)%. The angular distribution of the photons in theB* rest frame is used to measure the relative contribution of longitudinalB* polarization states to beσ _L/(σ _L+σ _T)=(33±6±5)%.     

About non-linear realization of quantumSL q(2, R) group

Published in Teoreticheskaya i Matematicheskaya Fizika, Vol. 95, No. 2, pp. 183–186, May, 1993.     

A molecular dynamics study of the microstructure of the liquid-gas interphase surface

Numerical experiments showed that the number-of-bonds distribution of particles that form a fairly large molten argon-like cluster was bimodal. This result was interpreted as a consequence of the formation of two “phases, ” namely, particles inside the cluster and a monolayer of particles lying above the others. Particle chains were shown to be formed near the surface of the cluster. Splitting off of separate particles from them was the most probable mechanism of vaporization. Model concepts that described the dependences observed in numerical experiments were developed.     

Study of the Surface Processes in Vapor-Phase Epitaxial GaAs: Asymmetric Trapping of Atoms at the Step

Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl₃–H₂ system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the growth of epitaxial GaAs layers on vicinals in the neighborhood of (111)A. The effective diffusion length is estimated.