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91.
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Results of an experiment on investigating the fluctuations of a sound signal with a frequency of 295 Hz on a stationary 32-km-long acoustic path in a shallow sea are presented. Hydrological conditions on the path were characterized by the presence of a weak thermocline and a frequent occurrence of intense internal wave trains. The space-time characteristics of these internal waves were measured in detail. Experimental evidence of the repetition of the forms of internal solitons in the variations of the amplitude and phase of an acoustic signal was obtained.  相似文献   
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95.
In agreement with the Kohn theorem the relative motion (rel) of three electrons in a two-dimensional parabolic trap separates from the centre-of-mass (CM) motion. By introducing new coordinates the Hamiltonian for relative motion in the approximation of non-interacting electrons can be taken to the normal form. The eigenstates of the normalized Hamiltonian are products of the Fock-Darwin states for normal modes. The energy levels for relative motion are obtained by diagonalizing the exact Hamiltonian in the eigenbasis for the non-interacting case. In this basis the interaction matrix elements can be obtained in the analytical form. Since the rank of the Hamiltonian matrix is significantly reduced, the calculations are faster and more accurate than those for the full (CM + rel) motion. This advantage is especially important for the calculations of excited states and the analysis of energy spectra.  相似文献   
96.
We report the results of an X-ray diffraction study of CdAl2Se4 and of Raman studies of HgAl2Se4 and ZnAl2Se4 at room temperature, and of CdAl2S4 and CdAl2Se4 at 80 K at high pressure. The ambient pressure phase of CdAl2Se4 is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl2Se4 and ZnAl2Se4 reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl2S4 and CdAl2Se4, which shows a very weak temperature dependence of the Raman-active phonon modes.  相似文献   
97.
Analytical expressions are obtained that describe the changes in the degree of coherence and in the thickness of the coherence layers occurring upon propagation of a dispersed broadband laser beam. It is found that the greater the tilting of the coherence layers with respect to the phase fronts, the more rapidly the spatial coherence is violated with increasing distance. A comparison with the case of an undispersed beam is performed. It is shown that, as the beam propagates, the decrease in the degree of coherence is accompanied by the appearance of spatial fluctuations of this parameter. The degree of mutual coherence of intersecting dispersed beams with parallel correlated coherence layers, which determines the efficiency of their coherent interaction, is investigated. The existence of spatial fluctuations of the degree of mutual coherence is established.  相似文献   
98.
We propose a model of coherent-echo signals during the monostatic sounding of the ionosphere. The model is based on the previously obtained radar equation for separate samples of the scattered signal. The dielectric-permittivity perturbation described by a discrete set of spatial harmonics modulated in space and time is used as the scattering irregularities. The model was tested using Irkutsk incoherent-scatter radar data obtained during the coherent-echo observations in July 15 and 16, 2000. The test shows that the model is suitable for describing the observed characteristics of separate sample spectra of the coherent-echo signals. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 49, No. 6, pp. 459–477, June 2006.  相似文献   
99.
The hydrogen ionization process is studied experimentally on an industrial sintered nickel oxide electrode in models of sealed nickel-metal hydride batteries. It is shown that the hydrogen ionization rates that are reached during overcharge by high current densities in conditions of forced gas delivery into the electrode pores (up to 40 mA cm?2) exceed the self-discharge rate of a nickel-hydrogen battery by two orders of magnitude. Up to 70% of hydrogen delivered into the compact assembly block undergoes ionization during forced charge of models of sealed nickel-metal hydride batteries with a closed hydrogen cycle. Two independent methods (potentiostatic and manometric) are used to determine the relationship between rates of hydrogen ionization with the degree of the electrode filling with gas and perform estimation of the process intensity at a unit reaction surface. It is established that, in conditions of forced gas delivery, practically all the hydrogen oxidation current is generated at the surface of the nickel oxide electrode beneath thin films of an electrolyte solution at the rate of 4–5 mA cm?2. It is shown that the hydrogen oxidation rate on a nickel oxide electrode filled in part by gas is independent of the electrode potential, probably because of a tangible contribution made by diffusion limitations to the overall hampering of the process.  相似文献   
100.
The influence of processing parameters on the electrical characteristics of RuO2/LaAlO3/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO3 on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result is explained by oxygen ability to heal oxygen vacancies in the LaAlO3 film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO3 on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime. PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc  相似文献   
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