Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si

The influence of processing parameters on the electrical characteristics of RuO₂/LaAlO₃/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO₃ on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result is explained by oxygen ability to heal oxygen vacancies in the LaAlO₃ film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO₃ on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime. PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc     

Inequalities for the Moments and Distribution of the Ladder Height of a Random Walk

We obtain upper bounds for the tail distribution of the first nonnegative sum of a random walk and for the moments of the overshoot over an arbitrary nonnegative level if the expectation of jumps is positive and close to zero. In addition, we find an estimate for the expectation of the first ladder epoch.     

Possible Loss and Recovery of Gibbsianness¶During the Stochastic Evolution of Gibbs Measures

We consider Ising-spin systems starting from an initial Gibbs measure ν and evolving under a spin-flip dynamics towards a reversible Gibbs measure μ≠ν. Both ν and μ are assumed to have a translation-invariant finite-range interaction. We study the Gibbsian character of the measure νS(t) at time t and show the following: (1) For all ν and μ, νS(t) is Gibbs for small t. (2) If both ν and μ have a high or infinite temperature, then νS(t) is Gibbs for all t > 0. (3) If ν has a low non-zero temperature and a zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t and non-Gibbs for large t. (4) If ν has a low non-zero temperature and a non-zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t, non-Gibbs for intermediate t, and Gibbs for large t. The regime where μ has a low or zero temperature and t is not small remains open. This regime presumably allows for many different scenarios. Received: 26 April 2001 / Accepted: 10 October 2001     

Dynamic reflection holograms in CdF2 crystals with bistable centers

The diffraction efficiency and the recording and relaxation times of dynamic reflection holograms, recorded in CdF₂ crystals with bistable centers are studied experimentally in the temperature range 20–100°C. In the model experiments which measured the quality of the wave reflected from the hologram, the dynamic wavefront distortions are demonstrated to be efficiently compensated using a holographic corrector based on these crystals. CdF₂ crystals with bistable centers are likely to be useful in solving problems of correction of laser light wavefront and image correction in observation telescopes with nonideal primary mirrors.     

Purification and some properties of squalene-2,3-epoxide: lanosterol cyclase from rat liver

Squalene-2,3-epoxide: lanosterol cyclase was purified from rat liver in five steps as a soluble and homogeneous protein. The purified enzyme showed a single band on SDS-polyacrylamide gel electrophoresis with a molecular weight of 75 kD. In its native state it behaved as a homo-dimer. The isoelectric point of 5.5 and the apparent Km value for (3S)-squalene-epoxide of 55 microM were estimated for the cyclase.     

A method for computing the IR radiation of molecular gas jets in the volume approximation

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 3, pp. 478–484, September, 1991.     

Evaluation of integrals and the mellin transform

Translated from Itogi Nauki i Tekhniki, Seriya Matematicheskii Analiz, Vol. 27, pp. 3–146, 1989.     

Thermal emission spectrum from a semiconductor electron-hole plasma

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 624–629, October, 1991.     

The measurement of subcritical electroconvection

Under idealized conditions, electroconvection in a nematic liquid crystal sets in at a well-defined threshold of the driving ac voltage. Fluctuating convection rolls of a small amplitude below that threshold have been observed recently. The measurement of the amplitude of these fluctuations is described in detail in this paper. It is based on averaging the light intensity signals using the structure function and a quantitative analysis of the light deflection.     

The Implications of Cognitive-style Findings for Operational Research

Cognitive style refers to differences that can be perceived in individuals due to differing cognitive structures. There has been a large amount of research on how cognitive style affects managerial decision-making, particularly in the context of management information systems, but little or no attempt to relate these findings to operational research. This paper reviews the findings of cognitive-style research from the perspective of operational research, and draws a number of useful inferences concerning the matching of OR aids to managers, the presentation of information and recommendations, the use and acceptance of OR, and the structure of OR groups. Further, it is argued that cognitive-style findings help to give a justification to the move towards ‘soft’ approaches to analysis.