On the dynamical Casimir effect in a one-dimensional contracting cavity

The dynamical Casimir effect is analyzed in the framework of the S-matrix formulation for a one-dimensional cavity that exhibits contraction at a constant rate over a finite time interval. The exact solution to the problem is presented. It is demonstrated that the efficiency of the creation of pairs nonmonotonically depends on the contraction time. This is due to the fact that the particles are only created at the moments corresponding to the acceleration and stopping of the moving boundary, so that the contributions of these processes on the number of the created particles interfere with each other. The parameters that correspond to the optimal creation of pairs and the stability of a vacuum are presented. The effect of the finiteness of the cavity-boundary acceleration on the results obtained is studied.     

Theory of the phenomenological charge of dislocations generated by a phase transition

For the case of a phase transition into a macroscopically inhomogeneous state described by the order parameter (OP) that is characterized by a multiarm star of a vector {k_i}, a method for compensating the spatial variation in all star arms k_i is proposed. To this end, a unified tensor field (OP connectivity) is considered, which is interpreted as a stress field potential. The OP-connectivity interaction is described by the phenomenological dislocation charge. Alternative ways of physical interpretation of the OP connectivity are discussed.     

Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots

In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capture data by a similar method to that used for emission, by the box-car method. The capture activation energies are determined and compared with the emission activation energies.     

Distortions of the magnetic structure of a thin antiferromagnetic layer in magnetic field

Distortions induced by an external magnetic field in the magnetic structure of a thin layer of a uniaxial collinear antiferromagnet with rough surfaces are studied using computer simulation. It is shown that, under certain conditions, the presence of atomic steps at the layer surfaces causes the antiferromagnetic layer to break up into domains. The character and magnitude of distortions are found for an arbitrary ratio of the distance between atomic steps to the order parameter correlation length. Original Russian Text ? A.I. Morosov, I.A. Morosov, A.S. Sigov, 2007, published in Fizika Tverdogo Tela, 2007, Vol. 49, No. 7, pp. 1228–1235.     

Specific features of nanosystems based on natural isoferroplatinum

Nanostructuring of natural isoferroplatinum crystals is revealed by atomic-force microscopy for the first time. Typical scales of ～30, 50, and 100 nm are determined and the self-affine character of their relation is established using a wavelet analysis.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.     

Common luminescence intensity fluctuations of single particle and single molecules in non-conducing matrices

Optical spectroscopy in combination with wide field or confocal optical microscopy enables the investigation of single quantum objects such as organic molecules, II/VI semiconductor quantum dots and silicon nanocrystals. They all have fluctuations of luminescence intensities on time scales longer than μs in common. A comparison reveals that despite the large differences of the nature of the respective quantum objects, the intensity fluctuations are related to a slow ionisation process followed by a trapping of the photoejected charge in the non-conducing environment. Detailed aspects of the dynamics are controlled by the dielectric properties of the matrix.     

Relaxing local modes and the theory of low-frequency Raman scattering in glasses

Raman scattering in glasses is investigated theoretically. The experimental Raman spectra of glasses exhibit a low-frequency peak (at ～10 cm^?1) that, as a rule, is attributed to vibrational modes of nanometer-sized structural units (nanocrystallites). It is established that the elastic moduli of nanocrystallites must necessarily be dependent on their sizes due to the Laplace pressure effect. A theory of the low-frequency peak is constructed using a realistic size distribution function of nanocrystallites with allowance made for the Laplace pressure effect and the dissipation of vibrational energy. Within this theory, the shape of the low-frequency peak and its evolution with temperature can be analyzed quantitatively. The proposed approach offers a physical interpretation of the experimental data and provides insight into the relation of the characteristic nanocrystallite sizes to the elastic moduli and surface tension coefficients of materials.     

Models of elastic media with stress relaxation

The stress relaxation process is linked to the change with time of the metric stress tensor of the medium. Possible types of thermodynamically justified relaxation equations are discussed.