On the applicability limits of the method of radio-wave refraction scattering

We compare the computational possibilities of the radio-wave refraction-scattering method (RWRSM) and the parabolic-equation method (PEM) in determining the statistical characteristics of radio waves in a medium with large-scale inhomogeneities. It is shown that on the whole the applicability limits of the RWRSM are similar to the corresponding limits of the PEM. However, unlike the PEM, the RWRSM makes it possible, in a number of cases, to use simple means to solve radio-wave-refraction problems in a thick layer with large-scale inhomogeneities.Radiophysical Research Institute, Nizhny Novgorod. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 38, No. 11, pp. 1118–1123, November, 1995.     

On complete controllability of linear nonstationary systems

By use of the first integrals of the equations of unperturbed motion we obtain necessary and sufficient conditions for complete controllability of linear nonstationary dynamical systems.Translated fromMatematicheskie Metody i Fiziko-Mekhanicheskie Polya, Issue 35, 1992, pp. 160–163.     

States of surface V(IV)-bearing groups in phosphorus-vanadium oxide and titanium-vanadium oxide silica gels made by molecular epitaxy

ESR shows that V(IV) may occur in isolated or interacting vanadium-oxygen groups on the surfaces of catalytically active P-V and Ti-V-bearing silica gels; there is a relationship between the V(IV) content and the phthalic anhydride selectivity in the oxidation of o-xylene.Translated from Teoreticheskaya i Éksperimental'naya Khimiya, Vol. 28, No. 3, pp. 277–282, May–June, 1992.     

Symmetry algebra of nonlinear integrable equations

The complete symmetry algebras of the Veselov-Novikov equation and of the modified Kadomtsev-Petviashvili equation are constructed. Some related questions are discussed.P. P. Shirshov Institute of Oceanology, Russian Academy of Sciences. Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 95, No. 1, pp. 34–41, April, 1993.     

Electrical properties of Si-SiO2 systems after the application of a magnetic field

Weak-signal methods are used to study long-term changes in the electrophysical and photoelectric properties of Si-SiO₂ systems of n- and p-type semiconductors after the action of a steady magnetic field of 10² Oe. It is found that the field electrode can produce regions characterized by the anomalous recombination, migration, and transformation of nonequilibrium charge carriers, leading to a quasi-oscillating change in the recombination activity of the semiconducting system. It is observed that the magnetically induced changes in the system depend on the impurity of composition of the semiconductor. The results obtained are attributed to the decomposition of the growth structures of complexes and subsequent clustering of the decomposition products at elastic stress sinks. Tomsk State Academy of Control Systems and Electronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 62–66, February, 1997.