Investigation of annealing effects on the structural, magnetic and transport properties of Co/GaAs(0 0 1) thin films

Present paper deals with the structural, magnetic and transport studies of as-deposited as well as annealed Co/GaAs(0 0 1) thin film at different temperatures. The X-ray diffraction measurements show oriented growth of as-deposited Co film in the hcp (0 0 2) direction. However, the sample annealed at higher temperatures shows formation of ternary Co₂GaAs phase at the interface. Corresponding magnetic and transport measurements show decrement in magnetization and resistivity with annealing temperatures. The observed reductions in magnetization and resistivity values are mainly attributed to the formation of ternary Co₂GaAs phase at the interface.     

Influence of octupole interactions on the behavior of negative-parity states at low spins

The energies of negative-parity levels based on two-particle states exhibit a nonlinear behavior at low spins versus the core-rotation energy because the alignment process has not yet been completed for them. This behavior of negative-parity levels in the low-spin region is satisfactorily described upon the inclusion of octupole-octupole interactions. This is demonstrated within the rotational model involving the Coriolis mixing of states for the even-even isotopes ^162–168Hf.     

Surface distortions of the magnetic structure of a uniaxial antiferromagnet: The “magnetic field-roughness” phase diagram

Magnetic-structure distortions induced by an external magnetic field near a rough surface of a uniaxial collinear antiferromagnet are analyzed using mathematical modeling. The “magnetic field-roughness” phase diagram of these distortions is constructed. It is demonstrated that, under specific conditions, the presence of atomic steps leads to the formation of domains in the surface layer of the antiferromagnet. In the case of a strong roughness, there arise static vortices at the surface and a 90° domain wall aligned parallel to the surface of the antiferromagnet.     

Nonlinear-optical and micro-Raman diagnostics of thin films and nanostructures of ABO3 ferroelectrics

Ferroelectric composite two-dimensional ferroelectric/aluminum oxide nanostructures were studied. A porous aluminum oxide matrix was used as a template into which a ferroelectric precursor was introduced, followed by annealing. The prepared nanostructures were studied using optical second harmonic generation and micro-Raman scattering.     

Metallic films forming on the surface of alkali-halide crystals during thermal diffusion of intracrystalline immpurities

It was detected for the first time that films consisting of a transition-metal-based structure form (via thermal diffusion of intracrystalline impurities) on the surface of alkali-halide (LiF, NaF) crystals activated by transition metals Co, Ni, or Mn. The thickness, density, and composition of the films are shown to be different, depending on the heat treatment conditions. The crystals were annealed at temperatures varying from 473 to 1073 K in vacuum and air. The surface structures forming upon annealing in vacuum exhibit magnetic properties. The films were studied by optical, x-ray fluorescence, and electron spectroscopy to reveal the mechanisms of transition-metal film formation during thermal annealing.     

Localising gravity in composite monopole brane worlds without bulk cosmological constant

We study a 7-dimensional brane world scenario with a Ricci-flat 3-brane residing in the core of a composite monopole defect, i.e., a defect composed of a 't Hooft–Polyakov and a global monopole. Admitting a direct interaction between the two bosonic sectors of the theory, we analyse the structure of the space–time in the limits of small, respectively large direct interaction coupling constant. For large direct interaction, the global monopole disappears from the system and leaves behind a negative cosmological constant in the bulk such that gravity-localising solutions are possible without a priori introduction of a bulk cosmological constant.     

Investigations of He implantation and subsequent annealing effects in InP

The influence of 70 keV He⁺ ion implantation and subsequent annealing of Cz-indium phosphide (InP) samples has been investigated using a slow positron beam-based Doppler broadening spectrometer. Three samples with ion fluences of 1 × 10¹⁶, 5 × 10¹⁶ and 1 × 10¹⁷ cm⁻² were studied in the as-implanted condition as well as after annealing at 640 °C for times between 5 and 40 min. It was found that the line-shape parameter of the positron-electron annihilation peak in the implanted layer increases after 5 min annealing, then after longer annealing times it starts to decline gradually until it reaches a value close to the value of the as-grown sample. This implies that vacancy-like defects can be created in InP by He implantation followed by short-thermal annealing at T > 600 °C. Comparison of the results with a study where cavities were observed in He-implanted InP has been carried out.     

Optical properties of Fe-doped silica films on Si

Optical properties of Fe-doped silica films on Si were investigated by ellipsometric technique in the region 1-5 eV. Samples were produced by sol-gel method. Precursors were prepared by mixing tetraethoxysilane (TEOS) solution in ethanol and water with aqueous solution of Fe-chloride or Fe-acetate. The coating solution was deposited on Si substrates by spin on technique. The size of Fe-containing nanometric-sized particles depended on technology and varied from 20 to 100 nm. Optical response of complex hybrid samples SiO₂:Fe/Si was interpreted in a multi-layer model. In the inverse problem, the Maxwell equations were solved by transfer matrix technique. Dielectric function of Fe-doped silica layers was calculated in the model of effective media. Analysis of optical data has shown that various Fe-oxides formed. Experimental data for films obtained from precursors with Fe-acetate and annealed in hydrogen were well described by the model calculations taking into account a small contribution 1-5% of metal Fe imbedded in silica. The Fe/Fe-O contribution to optical response increased for samples grown from FeCl₃-precursor. Ellipsometric data for Fe-doped silica films on Si were interpreted taking into account the structural AFM studies as well as the results of magnetic measurements.     

Fatty acid binding site of mitochondrial uncoupling protein UCP2 as probed by EPR spectroscopy of spin-labeled fatty acids

Electron paramagnetic resonance (EPR) spectroscopy of spin-labeled fatty acids was used to investigate their interaction withEscherichia coli-expressed human mitochondrial uncoupling protein UCP2 refolded from inclusion bodies in nonaethylene glycol monododecyl ether (C₁₂E₉) micelles. 5-DOXYL-stearic acid and 4-PROXYL-palmitic acid bound to UCP2 exhibited additional clearly separated h_+1I, h_?1I “immobile” peaks in the low- and high-field region, respectively, separated by 42 and 44 Gauss, and extensively reduced h_+1M, h_?1M “mobile” peaks, separated by about 30 G, whereas with 7-DOXYL-stearic acid the I and M peaks were smoothed together into one wide peak. Competition of 4-PROXYL-palmitic acid with added palmitic acid, arachidonic acid, and all-cis-8,11,14-eicosatrienoic acid and of 7-DOXYL-stearic acid with arachidonic acid was indicated by the disappearance of the h_+1I, h_?1I “immobile” peaks, whereas redistribution in micelles without protein was indicated by the rising of the h_+1M, h_?1M “mobile” peaks. In conclusion, a competition of palmitic, arachidonic, and eicosatrienoic acid within a putative fatty acid binding site was observed for mitochondrial uncoupling protein UCP2. This finding together with the observation of EPR spectra of highly immobilized probes exclusively in the presence of the recombinant UCP2 suggest the existence of a fatty acid binding site on UCP2 which is a prerequisite of the fatty acid cycling mechanism as previously postulated for UCP1.     

Efficient multi and single line atomic fluorine lasers

Intense multi- and single-line laser operation is reported from semiconductively preionised atomic fluorine lasers employing an optimised capacitor transfer excitation circuitry. The performance and spectral characteristics of these lasers are discussed and compared to the characteristics of previously described atomic fluorine lasers. The efficiency of one of these lasers described, at optimum conditions, is reaching a value as high as 0.14%. To the best of our knowledge, this is the highest efficiency reported up date, for an atomic fluorine laser.