Phase transition characteristics of Ge–Sb–Te pseudobinary alloys in laser irradiation measurement

Optical switching and structural transformation of GeTe–Sb₂Te₃ pseudobinary alloys, Ge₂Sb₂Te₅, Ge₁Sb₂Te₄, and Ge₁Sb₄Te₇, were studied for data storage application. As-deposited Ge₂Sb₂Te₅, Ge₁Sb₂Te₄, and Ge₁Sb₄Te₇ thin films were amorphous and they crystallized to FCC and HCP upon heat treatment. Crystallization was accelerated by increasing the proportion of Sb₂Te₃ rather than GeTe in Ge–Sb–Te compounds; this was observed by reflectivity changes under nanosecond laser irradiation in static tester. The different crystallization kinetics according to composition might be affected by the structural incompatibility of GeTe under the ‘Umbrella Flip’ theory.     

Fabrication of nano-structured polythiophene nanoparticles in aqueous dispersion

The synthetic route of unsubstituted polythiophene (PT) nanoparticles was investigated in aqueous dispersion via Fe³⁺-catalyzed oxidative polymerization. With this new synthetic method, high conversion of thiophene monomers was obtained with only a trace of FeCl₃. The dispersion state showed that the PT nanoparticles were well dispersed in many polar solvents, compared to non-polar solvents, such as acetone, chloroform, hexane, and ethyl acetate. To compare the photoluminescence properties between PT nanoparticle dispersion and PT bulk polymers, the PL intensities were measured in the same measuring conditions. Further, core–shell poly(styrene/thiophene) (poly(St/Th)) latex particles were successfully prepared by Fe³⁺-catalyzed oxidative polymerization during emulsifier-free emulsion polymerization. The different polymerization rates of each monomer resulted in core–shell structure of the poly(St/Th) latex particles. The PL data of the only crumpled shells gave evidence that the shell component of core–shell poly(St/Th) latex particles is indeed PT, which was corroborated by SEM data. PL intensity of the core–shell poly(St/Th) nanoparticle dispersion was much higher than that of the PT nanoparticle dispersion, due to its thin shell layer morphology, which was explained by the self-absorption effect.     

Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface

Chemical reactivity of fluorine molecule (F₂)-germanium (Ge) surface and dissociation of fluorine (F)-Ge bonding have been simulated by semi-empirical molecular orbital method theoretically, which shows that F on Ge surface is more stable compared to hydrogen. Ge MIS (metal insulator semiconductor) capacitor has been fabricated by using F₂-treated Ge(1 0 0) substrate and HfO₂ film deposited by photo-assisted MOCVD. Interface state density observed as a hump in the C-V curve of HfO₂/Ge gate stack and its C-V hysteresis were decreased by F₂-treatment of Ge surface. XPS (X-ray photoelectron spectroscopy) depth profiling reveals that interfacial layer between HfO₂ and Ge is sub-oxide layer (GeO_x or HfGeO_x), which is believed to be origin of interface state density.F was incorporated into interfacial layer easily by using F₂-treated Ge substrate. These results suggest that interface defect of HfO₂/Ge gate stack structure could be passivated by F effectively.     

Effect of Ca interlayer thickness on electron injection of lithium quinolate/Ca/Al cathodes

Electron injection behavior of lithium quinolate (Liq)/Ca/Al cathode was investigated by using X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy (UPS). Interfacial energy barrier lowering of Liq/Ca/Al cathode was dependent on Ca thickness and maximum energy level shift was observed at a Ca thickness of 1 nm. Maximum current density could be obtained in Liq/Ca/Al device at a Ca thickness of 1 nm and it was well correlated with energy level shift from UPS measurement. Power efficiency of Liq/Al device could be improved by more than 70% by inserting Ca layer between Liq and Al.     

Nanoscale retention‐loss dynamics of polycrystalline PbTiO3 nanotubes

We observed the nanoscale retention dynamics of polycrystalline PbTiO₃ nanotubes using piezoresponse force microscopy. We found that the retention loss of the nanodot domains on the nanotubes showed the stretched exponential relaxation behaviors with stretched exponential factor n being less than 1 (0.523 and 0.692), which are similar to the thin films. In addition, the nanodot domains showed a diverse relaxation time constant τ due to different remnant polarization of each dot domains. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Antiferromagnetic interactions in Er-doped SnO<Subscript>2</Subscript> DMS nanoparticles

Diluted magnetic semiconductor (DMS) nanoparticles of Sn_1−x Er _x O₂ (x = 0.0, 0.02, 0.04, and 0.1) were prepared by sol–gel method. The X-ray diffraction patterns showed SnO₂ rutile structure for all samples with no impurity peaks. The decrease in crystallite size with Er concentration was confirmed from TEM measurements (from 12 to 4 nm). The UV–Visible absorption spectra of Er-doped SnO₂ nanoparticles showed blue shift in band gap compared to undoped SnO₂. The electron spin resonance analysis of Er-doped SnO₂ nanoparticles indicate Er³⁺ in a rutile lattice and also decrease in intensity with Er concentration above x = 0.02. Temperature-dependent magnetization studies and the inverse susceptibility curves indicated increased antiferromagnetic interaction with Er concentration.     

Agglomeration,sedimentation, and cellular toxicity of alumina nanoparticles in cell culture medium

The cytotoxicity of alumina nanoparticles (NPs) was investigated for a wide range of concentration (25–200 μg/mL) and incubation time (0–72 h) using floating cells (THP-1) and adherent cells (J774A.1, A549, and 293). Alumina NPs were gradually agglomerated over time although a significant portion of sedimentation occurred at the early stage within 6 h. A decrease of the viability was found in floating (THP-1) and adherent (J774A.1 and A549) cells in a dose-dependent manner. However, the time-dependent decrease in cell viability was observed only in adherent cells (J774A.1 and A549), which is predominantly related with the sedimentation of alumina NPs in cell culture medium. The uptake of alumina NPs in macrophages and an increased cell-to-cell adhesion in adherent cells were observed. There was no significant change in the viability of 293 cells. This in vitro test suggests that the agglomeration and sedimentation of alumina NPs affected cellular viability depending on cell types such as monocytes (THP-1), macrophages (J774A.1), lung carcinoma cells (A549), and embryonic kidney cells (293).     

Noncommutative electromagnetism as a large <Emphasis Type="Italic">N</Emphasis> gauge theory

We map noncommutative (NC) U(1) gauge theory on ℝ _C ^d ×ℝ _NC ²ⁿ to U(N→∞) Yang–Mills theory on ℝ _C ^d , where ℝ _C ^d is a d-dimensional commutative spacetime while ℝ _NC ²ⁿ is a 2n-dimensional NC space. The resulting U(N) Yang–Mills theory on ℝ _C ^d is equivalent to that obtained by the dimensional reduction of (d+2n)-dimensional U(N) Yang–Mills theory onto ℝ _C ^d . We show that the gauge-Higgs system (A _μ ,Φ ^a ) in the U(N→∞) Yang–Mills theory on ℝ _C ^d leads to an emergent geometry in the (d+2n)-dimensional spacetime whose metric was determined by Ward a long time ago. In particular, the 10-dimensional gravity for d=4 and n=3 corresponds to the emergent geometry arising from the 4-dimensional N=4{\mathcal{N}}=4 vector multiplet in the AdS/CFT duality. We further elucidate the emergent gravity by showing that the gauge-Higgs system (A _μ ,Φ ^a ) in half-BPS configurations describes self-dual Einstein gravity.     

First observation of B(s)(0) → J/ψη and B(s)(0) → J/ψη'

We report first observations of B(s)(0) → J/ψη and B(s)(0) → J/ψη'. The results are obtained from 121.4 fb(-1) of data collected at the Υ(5S) resonance with the Belle detector at the KEKB e+ e- collider. We obtain the branching fractions B(B(s)(0) → J/ψη)=[5.10±0.50(stat)±0.25(syst)(-0.79)(+1.14)(N(B(s)(*) B(s)(*))]×10(-4), and B(B(s)(0) → J/ψη')=[3.71±0.61(stat)±0.18(syst)(-0.57)(+0.83)(N(B(s)(*) B(s)(*))]×10(-4). The ratio of the two branching fractions is measured to be (B(B(s) → J/ψη'))/(B(B(s) → J/ψη))=0.73±0.14(stat)±0.02(syst).