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151.
152.
Marco Sangermano Roberta Bongiovanni Giulio Malucelli Aldo Priola Richard R. Thomas Charles M. Kausch Yongsin Kim 《Journal of polymer science. Part A, Polymer chemistry》2006,44(24):6943-6951
New fluorinated, polyfunctional propenyl ether functionalized resins were synthesized, and their behavior in cationic photopolymerization was investigated. The photopolymerization proceeded efficiently with a high double‐bond conversion (>90%), giving rise to UV‐cured coatings characterized by low glass‐transition temperatures (?33 °C ≤ glass‐transition temperature ≤ ?15 °C) and hydrophobic surface properties. A fluorinated additive was also employed as a reactive additive in the cationic photopolymerization of trimethylolpropane tripropenyl ether, increasing the double‐bond conversion, polymer network flexibility, thermal stability, and surface hydrophobicity. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 6943–6951, 2006 相似文献
153.
Sangcheol Kim Frdric S. Diana Pierre M. Petroff Edward J. Kramer Takeshi Ootsu Tomohide Murase 《Journal of Polymer Science.Polymer Physics》2006,44(22):3227-3233
The encapsulation of the nanocrystalline manganese‐doped zinc sulfide (ZnS:Mn) in poly(styrene‐b‐2vinylpyridine) (PS‐PVP) diblock copolymers is reported. Below the critical micelle concentration in the absence of nanocrystals (NCs), inverse micelles of PS‐PVP were induced by adding ZnS:Mn NCs, the presence of which was confirmed by scanning force microscope and dynamic light scattering. In toluene, a PS‐selective solvent, the less‐soluble PVP blocks preferentially surround the ligand‐coated ZnS:Mn NCs. For PS‐PVP encapsulated ZnS:Mn NCs, the ratio of blue emission to orange emission of ZnS:Mn NCs is dependent on both the concentration of PS‐PVP and the solvent quality. The pyridine of PVP blocks form complexes with the Zn atoms via the nitrogen lone pair and thus the sulfur vacancies are passivated. As a result, the defect‐related blue emission is selectively quenched even when the micelles are not formed. As the concentration of PS‐PVP encapsulating the ZnS:Mn NCs increases, the intensity of blue emission decreases. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3227–3233, 2006 相似文献
154.
J.-S. Kang G. Kim S.S. Lee S. Choi S. Cho S.W. Han H.J. Shin B.I. Min 《Journal of magnetism and magnetic materials》2006
The spatial concentration distribution and local electronic structure of ferromagnetic Ge1−xTx (T=Cr, Mn, Fe) DMS single crystals have been investigated by using scanning photoelectron microscopy (SPEM), X-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES). It is found that doped T ions in Ge1−xTx crystals are chemically phase-separated, suggesting that the observed ferromagnetism arises from the phase-separated T-rich phases in Ge1−xTx. 相似文献
155.
156.
Chang-Wan Kim 《Archiv der Mathematik》2007,88(4):378-384
We showed that any compact locally symmetric Finsler metric with positive flag curvature must be Riemannian.
Dedicated to Professor Karsten Grove on the occassion of his sixtieth birthday
Received: 8 May 2006 相似文献
157.
Structure and electrical transport properties of bismuth thin films prepared by RF magnetron sputtering 总被引:1,自引:0,他引:1
Bismuth thin films were prepared on glass substrates with RF magnetron sputtering and the effects of deposition temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth and the coalescence of grains were observed above 393 K with field emission secondary electron microscopy. Continuous thin films could not be obtained above 448 K because of the segregation of grains. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility in exponential ways until 403 K. Resistivity of sputter deposited bismuth films has its minimum (about 0.7 × 10−3 Ω cm) in range of 403-433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to the cancellation of the decrease of carrier density and the increase of mobility. However, the abrupt change of electrical properties of film annealed above 523 K was observed, which is caused by the oxidation of bismuth layer. 相似文献
158.
The energy level alignment between C60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C60 and Al, C60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C60 and Al. The barrier height of electron injection from Al to C60 is 0.11 eV, which is smaller value than that of hole injection. 相似文献
159.
Anisha Gokarna Yong Hwan Kim Yong-Hoon Cho Min Su Lee In Cheol Kang Hyun Kyu Park Min Gon Kim Bong Hyun Chung 《Optical Review》2006,13(4):288-291
We demonstrate the fluorescence mapping of protein microarrays by the technique of scanning near-field optical microscopy
(SNOM) and confocal microscopy. Micron sized spots (300 μm) of human Immunoglobulin G (hIgG) protein with and without a Cy3
dye labeling have been fabricated on glass substrates by an immobilization method which makes use of calixcrown derivatives
termed Prolinker. We have also tried to probe into the well-known “doughnut effect” observed in fluorescence images of proteins
using the SNOM technique. The topographic and fluorescence SNOM images revealed that the number of proteins at the boundary
of the spot were more than at the center in the case of the microarray spot which showed brighter luminescence at the edge
than at the center in the confocal image. 相似文献
160.
Hong Oh Kim Rae Young Kim Jae Kun Lim Zuowei Shen 《Journal of Approximation Theory》2007,147(2):196-204
We start with a characterization of a pair of frames to be orthogonal in a shift-invariant space and then give a simple construction of a pair of orthogonal shift-invariant frames. This is applied to obtain a construction of a pair of Gabor orthogonal frames as an example. This is also developed further to obtain constructions of a pair of orthogonal wavelet frames. 相似文献