关于推广的KdV方程的孤波解

修正了文献[5]中推广的KdV方程传播波解的形变理论,并提出了一个相关的代数方程有非零实根的充要条件,从而指出了文献[5]中的一个分析错误。最后直接从推广的KdV方程本身给出了由形变理论生成的孤波解的显式公式。 关键词：     

透射强度比X射线荧光光谱法测定金属镀层组分

本文介绍了X射线荧光光谱透射强度比测定中等可变厚度金属镀层的组分方法。采用镀层元素强度和基片透射强度之比对镀层元素镀布分量制作工作曲线。     

大鼠脑组织含磷代谢物随年龄变化的NMR研究

随着人口老龄化的不断加剧,衰老相关疾病已成为全球关注的问题.神经系统功能的退行性改变居于衰老相关疾病的首位,其机制尚不明了.该文旨在通过核磁共振磷谱(~(31)P NMR)检测不同月龄大鼠脑组织中小分子物质的改变,明确能量相关的含磷化合物随大鼠年龄增长的变化,从而揭示脑组织中年龄相关代谢物的变化规律.该研究萃取了不同年龄(幼年、中年及老年)Sprague-Dawley(SD)大鼠脑组织中的小分子物质,进行了~(31)P NMR检测分析.结果显示:老年大鼠脑组织中能量代谢相关物质——磷酸肌酸的含量显著升高,而磷脂酰胆碱及磷酸肌醇含量显著降低,并且出现了磷酸化葡萄糖.这一发现有助于理解衰老相关的脑结构和功能下调,为神经退行性疾病的发生提供依据.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Excited State Properties of Fluorine-Substituted Hexabenzocoronene： A Quantum-Chemical Characterization

The first fluorine-substituted hexabenzocoronene has been synthesized and its electronic structure and optical properties have been reported [Q. Zhang, et al., Org. Lett. 7 （2005） 5019]. In this letter, the electronic structure and excited state properties of the fluorine-substituted hexabenzocoronene are studied with quantum chemistry method as well as the transition and the charge difference densities. The transition densities show the orientations and strength of the dipole moments and the charge difference densities reveal the orientation and results of the intramolecular charge transfer. The calculated transition energies and oscillator strengths are consistent with the experimental data, and the theoretical results of transition and charge difference densities are valuable to understanding the excited state properties of the fluorine-substituted hexabenzocoronene.     

对一个力学碰撞问题的讨论

对普通物理力学中有关碰撞的一个问题,从恢复系数e的取值角度出发,进行了详细求解和讨论,得到了更完整的结果.     

ICP-AES测定高纯碲中11种杂质元素

电感耦合等离子体原子发射光谱法 (ICP- AES)同时测定高纯碲中 11种杂质元素。用离峰扣背景法消除背景干扰 ,检出限能满足高纯碲中杂质元素的测定要求 ,加标回收率在 94 .0 %— 10 8%之间。     

Pressure-Induced Shifts of R1 and R2 Lines of YAG:Cr3+

By means of improved ligand-field theory, the "pure electronic" pressure-induced shifts (PS's) and the PS's due to electron-phonon interaction (EPI) of R1 line and R2 line of YAG:Cr3 have been calculated, respectively.The calculated results are in very good agreement with the experimental data. It is demonstrated that the admixture of |t22(3T1)e4T2> and |t322E> bases in the wavefunction of R1 level of YAG:Cr3 and its change with pressure play a key role for the PS of R1 line. The behaviors of the "pure electronic" PS of R1 line and the PS of R1 line due to EPI are different. It is the combined effect of them that gives rise to the total PS of R1 line, which has satisfactorily explained the experimental results. The systematic analyses and comparisons between the feature of R1-line PS of YAG:Cr3 and the ones of three laser crystals (GSGG:Cr3 , GGG:Cr3 and ruby) have been made, and the origin of the difference between them has been revealed.     

基于顺序形态变换的生物芯片图像网格化

生物芯片图像网格化是对由生物芯片扫描得到的荧光成像中的信号(Foreground)和背景(Background)进行划分,以便提取各点的吸光度值、面积和吸光度比等荧光点的数据。网格化的准确与否决定了数据提取的正确性。提出了一种运用顺序形态变换理论实现生物芯片荧光图像网格化的方法,通过对百分位值在0~1之间的顺序形态进行变换,可实现像素灰度的极小值、中间值等多刻度值的灰度取值运算。理论分析表明,该算法能够识别信号与背景的边界,可去除噪声等非边界信息,能判断信号区域,可确定荧光点的边界和范围,可实现荧光点阵图像的网格化。试验结果表明,该算法对不同信噪比的荧光图像来说有很强的适应性,可用于高密度生物芯片图像的处理。