Improvement of <Emphasis Type="Italic">n</Emphasis>-ZnO/<Emphasis Type="Italic">p</Emphasis>-Si photodiodes by embedding of silver nanoparticles

The photo-current of n-ZnO/p-Si heterojunction photodiodes was improved by embedding Ag nanoparticles in the interface (ZnO/nano-P_Ag/p-Si), and the ratio between photo- and dark-current increased by about three orders more than that of a n-ZnO/p-Si specimen. The improvement in the photo-current resulted from the light scattering of embedded Ag nanoparticles. The I–V curve of n-ZnO/p-Si degraded after thermal treatment (A-ZnO/p-Si) because the silicon robbed the oxygen from ZnO to form amorphous silicon dioxide and left an oxygen vacancy. Notably, the properties of ZnO/nano-P_Ag/p-Si were better in the time-dependent photoresponse under 10 V bias. Ag nanoparticles (15–20 nm) scattered the UV light randomly and increased the probability for the absorption of ZnO to enhance the properties of the photodiode.     

Analytical study of an active piezoelectric absorber on vibration attenuation of a plate

The attenuation of the transverse vibration of a plate, subjected to a harmonic force, is studied. This goal can be achieved by using an active dynamic absorber. The active absorber is made of a pair of piezoelectric sheets, attached to both sides of the plate, and closed electric circuits. One piece of the piezoelectric material provides a sensor for detecting the motion of the plate. Another piece serves as an active dynamic absorber. The equations of motion of the composite plate, including the plate and the piezoelectric material, and the circuit equations of the sensor and the absorber are derived. The displacements of the plate and the currents in the circuits are calculated. The active absorber can successfully attenuate the vibration. The numerical results show that the proposed active absorber can offer more reduction than that using a passive absorber while the absorber is designed to suppress the resonance of a particular vibration mode. Moreover, the active absorber can also reduce the displacements corresponding to other uncontrolled modes. The effects of altering various parameters of the active absorber are studied and discussed.     

Tens of GHz Tantalum pentoxide‐based micro‐ring all‐optical modulator for Si photonics

A tantalum pentoxide‐based (Ta₂O₅‐based) micro‐ring all‐optical modulator was fabricated. The refractive index inside the micro‐ring cavity was modified using the Kerr effect by injecting a pumped pulse. The transmittance of the ring resonator was controlled to achieve all‐optical modulation at the wavelength of the injected probe. When 12 GHz pulses with a peak power of 1.2 W were coupled in the ring cavity, the transmission spectrum of the Ta₂O₅ resonator was red‐shifted by 0.04 nm because of the Kerr effect. The relationship between the modulation depth and gap of the Ta₂O₅ directional coupler is discussed. An optimized gap of 1100 nm was obtained, and a maximum buildup factor of 11.7 with 84% modulation depth was achieved. The nonlinear refractive index of Ta₂O₅ at 1.55 μm was estimated as 3.4 × 10^?14 cm²/W based on the Kerr effect, which is almost an order of magnitude higher than that of Si₃N₄. All results indicate that Ta₂O₅ has potential for use in nonlinear waveguide applications with modulation speeds as high as tens of GHz.

     

Numerical study of InGaN tandem solar cells with intermediate bands

Theoretical investigations of InGaN tandem solar cells with intermediate bands (IBs) have been conducted through calculating the diode equation taking into account the radiative and nonradiative recombination currents. The calculated maximum ef?ciencies of the double‐junction cell with one IB in each subcell are 57.85% and 68.37% under AM1.5G one‐sun and 46000‐sun illuminations, respectively. It has also been observed that the combined device with the top‐cell bandgaps of 2.9–3.4 eV (2.6–3.4 eV for full concentration) may have an opportunity to realize the application of over 50% efficiency. We suggest that the optimized width of the IB layer be designed in the range of 1–6 μm if its absorption coefficient is 10⁴–10⁵ cm^–1 in the IB region.     

Directed triple systems

Directed triple systems are an example of block designs on directed graphs. A block design on a directed graph can be defined as follows. Let G be a directed graph of k vertices which contain no loops. Let S be a set of υ elements. A collection of k-subsets of S with an assignment of the elements of each k-subset to the vertices of G is called a block design on G of order υ if the following is satisfied. Any ordered pair of elements of S is assigned λ times to an edge of G.For example, if S = {a, b, c, d, e} and

and bae; cad; abc; dbe; acd; bce; adb; cde; aed; bec; is a collection of 3-subsets so written that in each subset the first element is assigned to the vertex 1, the second to 2, and the third to 3, then the collection is a block design on G with λ = 1.In this paper, it is shown that for the graph

if λ = 1, then the graph exists for all υ such that ν ? 2 mod 3.     

Handcuffed designs

Handcuffed designs are a particular case of block designs on graphs. A handcuffed design with parametersv, k, λ consists of a system of orderedk-subsets of av-set, called handcuffed blocks. In a block {A ₁,A ₂,?, A _k } each element is assumed to be handcuffed to its neighbours and the block containsk ? 1 handcuffed pairs (A ₁,A ₂), (A ₂,A ₃), ? (A _k?1,A _k ). These pairs are considered unordered. The collection of handcuffed blocks constitute a hundcuffed design if the following are satisfied: (1) each element of thev-set appears amongst the blocks the same number of times (and at most once in a block) and (2) each pair of distinct elements of thev-set are handcuffed in exactly λ of the blocks. If the total number of blocks isb and each element appears inr blocks the following conditions are necessary for the handcuffed design to exist:

1. λv(v?1) = (k?1) b,
2. rv = kb.

We denote byH(v, k, λ) the class of all handcuffed designs with parametersv, k, λ and sayH (v, k, λ) exists if there is a design with parametersv, k, λ. In this paper we prove that the necessary conditions forH (v, k, λ) exist are also sufficient in the following cases: (a)λ = 1 or 2; (b)k = 3; (c)k is evenk = 2h, and (λ, 2h ? 1) = 1; (d)k is odd,k = 2h + 1, and (λ, 4h)=2 or (λ, 4h)=1.     

基于液晶体的大错位量散斑相移技术研究

系统地分析了大错位量散斑干涉术测量离面位移的原理,并结合晶体光学理论详细分析液晶体的相移过程．同时从理论上剖析了沃拉斯顿棱镜的错位机理,从而构造出一种新的基于液晶体实现大错位量散斑相移技术的测试系统。采用该检测系统对结构实体混凝土在不同养护时间情况下的力学行为进行测试研究。实验结果揭示：随着养护时间的增加,混凝土结构的力学性能指标也相应增加,但在养护21天后,混凝土结构材料的弹性模量和结构强度都达到某一稳定值(即标准试样在同等养护条件下的实验室测量值)。并且也发现该技术使用方便,检测时受环境的影响小,可以实现现场在线原位实时无损检测,并能够得到非常真实的检测结果,从而可以实现更精确的定量计算。     

Alkene Carboarylation through Catalyst-Free,Visible Light-Mediated Smiles Rearrangement

A light-mediated Truce–Smiles arylative rearrangement is described that proceeds in the absence of any photocatalyst. The protocol creates two C−C bonds from simple starting materials, with the installation of an aryl ring and a difluoroacetate moiety across unactivated alkenes. The reaction proceeds via a radical mechanism, utilizing a light-mediated reduction of ethyl bromodifluoroacetate by N,N,N′,N′-tetramethylethylenediamine (TMEDA) to set up intermolecular addition to an unactivated alkene, followed by Truce–Smiles rearrangement.     

Generation and Reactivity of a One-Electron-Oxidized Manganese(V) Imido Complex with a Tetraamido Macrocyclic Ligand

The synthesis and X-ray structure of a new manganese(V) mesitylimido complex with a tetraamido macrocyclic ligand (TAML), [Mn^V(TAML)(N-Mes)]⁻ ( 1 ), are reported. Compound 1 is oxidized by [(p-BrC₆H₄)₃N ]^+.[SbCl₆]⁻ and the resulting Mn^VI species readily undergoes H-atom transfer and nitrene transfer reactions.