全文获取类型
收费全文 | 152559篇 |
免费 | 1573篇 |
国内免费 | 383篇 |
专业分类
化学 | 82008篇 |
晶体学 | 2028篇 |
力学 | 6659篇 |
综合类 | 7篇 |
数学 | 15306篇 |
物理学 | 48507篇 |
出版年
2020年 | 1112篇 |
2019年 | 1174篇 |
2018年 | 1475篇 |
2017年 | 1452篇 |
2016年 | 2471篇 |
2015年 | 1546篇 |
2014年 | 2426篇 |
2013年 | 6316篇 |
2012年 | 4931篇 |
2011年 | 6258篇 |
2010年 | 4280篇 |
2009年 | 4292篇 |
2008年 | 5694篇 |
2007年 | 5767篇 |
2006年 | 5410篇 |
2005年 | 5000篇 |
2004年 | 4413篇 |
2003年 | 3856篇 |
2002年 | 3885篇 |
2001年 | 4337篇 |
2000年 | 3316篇 |
1999年 | 2573篇 |
1998年 | 2243篇 |
1997年 | 2184篇 |
1996年 | 1981篇 |
1995年 | 1898篇 |
1994年 | 1886篇 |
1993年 | 1726篇 |
1992年 | 1994篇 |
1991年 | 2120篇 |
1990年 | 1917篇 |
1989年 | 1916篇 |
1988年 | 1856篇 |
1987年 | 1756篇 |
1986年 | 1692篇 |
1985年 | 2193篇 |
1984年 | 2325篇 |
1983年 | 1900篇 |
1982年 | 2078篇 |
1981年 | 1964篇 |
1980年 | 1888篇 |
1979年 | 2029篇 |
1978年 | 2198篇 |
1977年 | 2068篇 |
1976年 | 2113篇 |
1975年 | 2019篇 |
1974年 | 2072篇 |
1973年 | 2060篇 |
1972年 | 1354篇 |
1971年 | 1210篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
101.
Lagrangian and Eulerian modelling approaches are compared for simulating turbulent dispersion and coalescence of droplets within a spray. Both models predict similar droplet dispersion rates and shifts in droplet size distribution due to coalescence within the spray, over a wide range of droplet and gas flows, and for sprays with different droplet-size distributions at the nozzle exit. The computer time required for simulating coalescence within a steady axisymmetric spray is of a similar order of magnitude regardless of which formulation, Eulerian or Lagrangian, is adopted. However, the Lagrangian formulation is more practical in terms of the range of applicability and ease of implementation. 相似文献
102.
Vivek F. Farias 《Operations Research Letters》2006,34(2):180-190
We consider a problem of allocating limited quantities of M types of resources among N independent activities that evolve over T epochs. In each epoch, we assign to each activity a task which consumes resources, generates utility, and determines the subsequent state of the activity. We study the complexity of, and approximation algorithms for, maximizing average utility. 相似文献
103.
V. Edon M.C. Hugon B. Agius L. Miotti C. Radtke F. Tatsch J.J. Ganem I. Trimaille I.J.R. Baumvol 《Applied Physics A: Materials Science & Processing》2006,83(2):289-293
The influence of processing parameters on the electrical characteristics of RuO2/LaAlO3/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO3 on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and
gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford
backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in
better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result
is explained by oxygen ability to heal oxygen vacancies in the LaAlO3 film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO3 on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime.
PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc 相似文献
104.
Th. Seyller K.V. Emtsev F. Speck A. Tadich J.D. Riley O. Rader A.M. Shikin 《Surface science》2006,600(18):3906-3911
Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of graphite layers grown by solid state graphitization of SiC(0 0 0 1) surfaces. The process leads to well-ordered graphite layers which are rotated against the substrate lattice by 30°. On on-axis 6H-SiC(0 0 0 1) substrates we observe graphitic layers with up to several 100 nm wide terraces. ARUPS spectra of the graphite layers grown on on-axis 6H-SiC(0 0 0 1) surfaces are indicative of a well-developed band structure. For the graphite/n-type 6H-SiC(0 0 0 1) layer system we observe a Schottky barrier height of ?B,n = 0.3 ± 0.1 eV. ARUPS spectra of graphite layers grown on 8° off-axis oriented 4H-SiC(0 0 0 1) show unique replicas which are explained by a carpet-like growth mode combined with a step bunching of the substrate. 相似文献
105.
This paper is concerned with the implementation and testing of an algorithm for solving constrained least-squares problems. The algorithm is an adaptation to the least-squares case of sequential quadratic programming (SQP) trust-region methods for solving general constrained optimization problems. At each iteration, our local quadratic subproblem includes the use of the Gauss–Newton approximation but also encompasses a structured secant approximation along with tests of when to use this approximation. This method has been tested on a selection of standard problems. The results indicate that, for least-squares problems, the approach taken here is a viable alternative to standard general optimization methods such as the Byrd–Omojokun trust-region method and the Powell damped BFGS line search method. 相似文献
106.
107.
Possible Loss and Recovery of Gibbsianness¶During the Stochastic Evolution of Gibbs Measures 总被引:1,自引:1,他引:0
A.C.D. van Enter R. Fernández F. den Hollander F. Redig 《Communications in Mathematical Physics》2002,226(1):101-130
We consider Ising-spin systems starting from an initial Gibbs measure ν and evolving under a spin-flip dynamics towards a
reversible Gibbs measure μ≠ν. Both ν and μ are assumed to have a translation-invariant finite-range interaction. We study
the Gibbsian character of the measure νS(t) at time t and show the following:
(1) For all ν and μ, νS(t) is Gibbs for small t.
(2) If both ν and μ have a high or infinite temperature, then νS(t) is Gibbs for all t > 0.
(3) If ν has a low non-zero temperature and a zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t and non-Gibbs for large t.
(4) If ν has a low non-zero temperature and a non-zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t, non-Gibbs for intermediate t, and Gibbs for large t.
The regime where μ has a low or zero temperature and t is not small remains open. This regime presumably allows for many different scenarios.
Received: 26 April 2001 / Accepted: 10 October 2001 相似文献
108.
F.E. SalmanN. Shash H. Abou El-HadedM.K. El-Mansy 《Journal of Physics and Chemistry of Solids》2002,63(11):1957-1966
AC conductivity and dielectric studies on vanadium phosphate glasses doped with lithium have been carried out in the frequency range 0.2-100 kHz and temperature range 290-493 K. The frequency dependence of the conductivity at higher frequencies in glasses obeys a power relationship, σac=Aωs. The obtained values of the power s lie in the range 0.5≤s≤1 for both undoped and doped with low lithium content which confirms the electron hopping between V4+ and V5+ ions. For doped glasses with high lithium content, the values of s≤0.5 which confirm the domination of ionic conductivity. The study of frequency dependence of both dielectric constant and dielectric loss showed a decrease with increasing frequency while they increase with increasing temperature. The results have been explained on the basis of frequency assistance of electron hopping besides the ionic polarization of the glasses. The bulk conductivity increases with increasing temperature whereas decreases with increasing lithium content which means a reduction of the V5+. 相似文献
109.
Matroid bundles, introduced by MacPherson, are combinatorial analogues of real vector bundles. This paper sets up the foundations
of matroid bundles. It defines a natural transformation from isomorphism classes of real vector bundles to isomorphism classes
of matroid bundles. It then gives a transformation from matroid bundles to spherical quasifibrations, by showing that the
geometric realization of a matroid bundle is a spherical quasifibration. The poset of oriented matroids of a fixed rank classifies
matroid bundles, and the above transformations give a splitting from topology to combinatorics back to topology. A consequence
is that the mod 2 cohomology of the poset of rank k oriented matroids (this poset classifies matroid bundles) contains the free polynomial ring on the first k Stiefel-Whitney classes. 相似文献
110.
A simple simulation scheme that simultaneously describes the growth kinetics of SiO2 films at the nanometer scale and the SiOx/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law. 相似文献