Stress state of silver nanoparticles embedded in a silicate glass matrix investigated by HREM and EXAFS spectroscopy

Ag particles of 3.9 and 5.1 nm mean size in silicate glasses were produced by ion exchange and subsequent annealing at 480 and 600 ^°C. These thermal treatments may induce stresses in matrix and particles in addition to the well known effect of surface atoms because of the thermal expansion mismatch of both materials. Structural characterisation of the particles by high-resolution electron microscopy revealed a size-dependent lattice dilatation quite opposite to the so far observed lattice contraction of similar metal/glass composites. This result, confirmed by X-ray absorption spectroscopy at the Ag K-edge, is discussed in terms of an Ag-Ag bond length increase near the particle surface. The temperature-dependent EXAFS spectra (10-300 K) indicate an increased thermal expansion coefficient of the particles with an increased mean particle size calculated on the basis of an anharmonic Einstein model. With that the bond length increase can be explained. The results can be interpreted by a combination of both the particle size effects and the influence of the surrounding matrix. Received 30 November 2000     

LD-pumped passively Q-switched Nd:YVO4 infrared and green lasers

A laser diode directly end-pumped, passively Q-switched Nd:YVO₄/Cr:YAG laser is presented in this paper. With 600 mW incident pump laser, Q-switched 1064 nm laser with an average power of 138 mW, pulse width of 19.8 ns, repetition rate of 170.1 kHz and peak power of 40.96 W is obtained. When a KTP crystal was inserted into the cavity, Q-switched 532 nm laser with an average power of 56 mW, pulse width of 28.4 ns, repetition rate of 118.2 kHz and peak power of 16.7 W is obtained at last.     

Analysis of High Power Millimeter Wave Waveguide Mode Converters with Input Mode Mixture

Based on the coupled mode theory, this paper presents the study on the influence of input mode mixture in circular oversized waveguide mode converters. Three kinds of commonly used waveguide mode converters, including the waveguide mode converters with varying wall radius or small axis perturbations, and the waveguide mode converters with bent structures, are taken as the examples. The results show that the spurious input modes do not simply superimpose onto the output modes, and in some cases they may deteriorate the conversion efficiency for the main output mode. Methods for transforming such spurious input mode mixture simultaneously into the main output mode are also presented in this paper.     

半透明介质中辐射传递方程的反演计算及数值模拟

本文介绍了一侧为半透明、另一侧为非透明界面时一维半透明介质的辐射强度计算式。采用辐射与导热复合换热模型计算半透明介质内温度场。利用已知的温度场求半透明介质的辐射强度一正问题计算。将此辐射强度代入辐射反问题计算模型，引入测量误差，采用Ｃｈａｈｉｎｅ方法及演半透明介质内温度场一反问题计算。数值模拟表明，本文所采用的辐射反演法具有较高的精度及稳定性。     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.     

Low-temperature heat capacities and standard molar enthalpy of formation of N-methylnorephedrine C11H17NO（s）

This paper reports that low-temperature heat capacities of N-methylnorephedrine C11H17NO（s） have been measured by a precision automated adiabatic calorimeter over the temperature range from T=78K to T=400K. A solid to liquid phase transition of the compound was found in the heat capacity curve in the temperature range of T=342-364 K. The peak temperature, molar enthalpy and entropy of fusion of the substance were determined. The experimental values of the molar heat capacities in the temperature regions of T=78-342 K and T=364-400 K were fitted to two poly- nomial equations of heat capacities with the reduced temperatures by least squares method. The smoothed molar heat capacities and thermodynamic functions of N-methylnorephedrine C11H17NO（s） relative to the standard refer- ence temperature 298.15 K were calculated based on the fitted polynomials and tabulated with an interval of 5 K. The constant-volume energy of combustion of the compound at T=298.15 K was measured by means of an isoperibol precision oxygen-bomb combustion calorimeter. The standard molar enthalpy of combustion of the sample was calculated. The standard molar enthalpy of formation of the compound was determined from the combustion enthalpy and other auxiliary thermodynamic data through a Hess thermochemical cycle.     

Material growth and device fabrication of terahertz quantum-cascade laser based on bound-to-continuum structure

The terahertz quantum-cascade laser （THz QCL） based on bound-to-continuum structure is demonstrated. The X-ray diffraction measurement of the material shows a high crystalline quality of the active region. A THz QCL device was fabricated with semi-insulating surface-plasmon waveguide. The test device is lasing at about 3 THz and operating up to 60 K. It shows a single frequency property under different drive currents and temperatures. At 9 K, the maximum output power is greater than 2 mW with a threshold current density of 159 A/cm2.