表面张力对固壁旁空泡运动特性影响的理论和实验研究

表面张力是影响空泡脉动及空蚀的一个重要因素.对五种不同表面张力液体中空泡脉动（膨胀和收缩）过程进行了研究,并将实验结果与基于空泡生长和溃灭理论的计算结果进行了对比.实验中,用激光作为测试光源,采用光偏转测试系统研究了不同表面张力液体中空泡泡壁运动规律及泡壁速度的变化.结果表明：表面张力对空泡膨胀过程起抑制作用,故液体表面张力愈大,空泡能达到的最大直径越小;表面张力对空泡的收缩过程则起加速作用,液体表面张力愈大,收缩越迅速,空泡泡壁运动速度越大,其所产生的瞬时溃灭压强越大,空化效果越好. 关键词： 表面张力 空泡 光偏转     

择优取向MgO在Si衬底上的直流溅射制备及其性能表征

采用直流磁控溅射并通过优化工艺参数,在（100）Si衬底上成功制备了高度（100）择优的MgO薄膜和MgO/TiN双层膜结构.对 （100）MgO择优取向温度影响机理做了详细讨论,并利用XRD,AFM,FESEM等手段研究了在（100）Si和（100）TiN/Si两种衬底上,不同工艺条件下MgO薄膜的表面和断面微观结构,表征了MgO薄膜的柱状生长结构和与TiN薄膜的良好外延关系.在对薄膜光学特性的研究中,利用Sellmeier模型获得了Si上MgO薄膜在可见光波段的折射率参数（550 nm处折射率为1.6 关键词： MgO薄膜 择优取向 直流溅射 折射率拟合     

Triggering and guiding of high voltage discharge by using femtosecond laser filaments with different parameters

This paper demonstrates the triggering and guiding of the stationary high voltage (HV) discharges at 5--40 kV by using plasma filaments generated by femtosecond laser pulses in air. A significant reduction of the breakdown voltage threshold due to the pre-ionization of the air gap by laser filamentation is observed. The discharge experiments are performed by using laser pulses with different energy from 15--60 mJ. The electron density of filaments is detected by sonography method. The influence of the electron density of laser filaments on the triggering and guiding HV discharge is experimentally investigated. The results have shown that the behaviour of plasma filaments can strongly affect the efficiency of triggering and guiding HV discharge.     

非静水压条件下铁从α到ε结构相变的第一性原理计算

采用基于密度泛函理论的平面波赝势方法,研究了三轴加载的非静水压力和静水压力对铁从体心立方结构（bcc,α相）到六角密排结构（hcp,ε相）相变压力和磁性的影响,结果发现：在0—18 GPa压力范围内,相对静水压力条件,随着压力的升高,bcc结构的原子磁矩在非静水压力下降低得更快;在非静水压力下,相变更容易发生,相变压力随着非静水压力程度的增加而降低;并且对非静水压力对相变压力影响的物理机理进行了讨论. 关键词： 相变 非静水压力 第一性原理 铁     

电场中里德伯原子动力学性质的半经典理论研究

利用闭合轨道理论和Poincaré截面两种方法研究了鞍点附近电场中高里德伯态Li原子的动力学性质.由于原子实的作用,体系是混沌的,闭合轨道和周期轨道在混沌体系中并存,但二者在Poincaré截面上的反映是不同的.讨论了两种半经典理论在研究混沌体系时的联系,得到了仅靠闭合轨道理论得不到的信息. 关键词： Poincaré截面 回归谱 Stark效应     

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as low as 4.23× 10^-5~Ωega \cdotcm² is achieved after annealing in N₂ at 800~°C for 3~min, which is much lower than that (>900~°C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5~kΩega /\Box. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.     

A Representation of the Lorentz Spin Group and Its Application

For an integer m ≥ 4, we define a set of 2[m/2] × 2[m/2] matrices γj （m）, （j = 0, 1,..., m - 1） which satisfy γj （m）γk （m） ＋γk （m）γj （m） = 2ηjk （m）I[m/2], where （ηjk （m）） 0≤j,k≤m-1 is a diagonal matrix, the first diagonal element of which is 1 and the others are -1, I[m/2] is a 2[m/1] × 2[m/2] identity matrix with [m/2] being the integer part of m/2. For m = 4 and 5, the representation （m） of the Lorentz Spin group is known. For m≥ 6, we prove that （i） when m = 2n, （n ≥ 3）, （m） is the group generated by the set of matrices {T｜T=1/√ξ（（I＋k） 0 ＋ 0 I-K） （ U 0 0 U）, （ii） when m = 2n ＋ 1 （n≥ 3）, （m） is generated by the set of matrices {T｜T=1/√ξ（I -k^- k I）U,U∈ （m-1）,ξ=1-m-2 ∑k,j=0 ηkja^k a^j〉0, K=i[m-3 ∑j=0 a^j γj（m-2）＋a^（m-2） In],K^-=i[m-3∑j=0 a^j γj（m-2）-a^（m-2） In]}     

一类非线性两点边值问题的正解

该文研究了一类非线性两点边值问题正解的确切个数及全局结构, 证明了其解集本身构成一条连通分支.广泛地回答了文献[1]中提出的问题.     

Synthesis, Characterization, DNA-Binding and Antiproliferative Activity of Nd(III) Complexes With N-(Nitrogen Heterocyclic) Norcantharidin Acylamide Acid

Three novel complexes [Nd(L)(NO₃)(H₂O)₂]·NO₃·2H₂O (HL¹ = N-pyrimidine norcantharidin acylamide acid, C₁₂H₁₃N₃O₄; HL² = N-pyridine norcantharidin acylamide acid, C₁₃H₁₄N₂O₄; HL³ = N-phenyl norcantharidin acylamide acid, C₁₄H₁₅NO₄) were synthesized. HL¹, HL² and HL³ are the ligand of complex(1), complex(2) and complex(3), respectively. Their structures were characterized by elemental analysis, conductivity measurement, infrared spectra and thermogravimetric analysis. The DNA-binding properties of the complexes have been investigated by fluorescence spectroscopy and viscosity measurements. The results suggest that the complexes can bind to DNA by partial intercalation. The liner Stern-Volmer quenching constant K_sq values are 3.3(±0.21)(1), 1.7(±0.19)(2) and 0.9(±0.04)(3), respectively. Complex (1) and (2) have been found to cleave pBR322 plasmid DNA at physiological pH and temperature. The test of antiproliferation activity indicates that complex(1) has strong antiproliferative ability against the SMMC7721 (IC₅₀ = 131.7 ± 23.4 μmol·L⁻¹) and A549 (IC₅₀ = 128.4 ± 19.9 μmol·L⁻¹) cell lines. The inhibition rates of complex(2) (IC₅₀ = 86.3 ± 11.3 μmol·L⁻¹) are much higher than that of NCTD (IC₅₀ = 115.5 ± 9.5 μmol·L⁻¹) and HL² (111.0 ± 5.7 μmol·L⁻¹) against SMMC7721 cell lines.     

模糊随机参数二维声场数值计算

解决声场参数同时具有模糊性和随机性的问题,实现模糊随机声场声压响应的预测,引入了信息熵理论,利用信息熵的等效转换,将模糊随机声场转化为纯随机声场或者纯模糊声场进行求解,推导了基于摄动法的二维随机声场和模糊声场的有限元计算公式。以模糊随机参数下的二维管道声场模型和某轿车二维声腔模型为例进行了数值计算,所得结果与蒙特卡洛法(Monte Carlo Method)所预测声压变化范围基本一致,同时,转化为纯随机声场和纯模糊声场所求得声压响应变化范围也基本一致,说明了本文方法计算结果的准确性。因此本文方法能很好地应用于模糊随机参数下二维声场的预测,具有重要的工程应用价值。