Kinetic Studies of Electrochemical Oxidation of 1,3-Benzenedithiol

The electrochemical oxidation of 1, 3-benzenedithiol was investigated in a 0. 100 mol/L tetrabutylammonium perchlorate/acetonitrile electrolyte. The electrochemical techniques used were potential sweep, bulk electrolysis, rotating disc and the potential step method. The combination of the techniques yielded the number of electrons transferred per molecule, the reaction order, the transfer coefficient, the diffusion coefficient and concentration of dithiol anions, the standard heterogeneous rate constant as well as the formal potential and equilibrium constant of the preceeding dissociation reaction. This paper also illustrates the methods for studying the electrode kinetics of reactions which (a) involve a chemical reaction preceeding the electron-transfer process, (b) have insoluble polymer products, and (c) are totally irreversible.     

Windows CE.Net嵌入式操作系统本地化研究及实现

本文对嵌入式Windows CE.Net操作系统的主要体系结构进行剖析.研究设计出了维吾尔文本地化环境,利用资源编译器编译和反编译功能,构建了基于Windows CE.Net平台的维吾尔文图形用户界面资源库,实现Windows CE.Net的界面维文化和基于Windows CE.Net的应用程序的维文支持;开发了输入法程序,实现Windows CE.Net的维吾尔文字键盘输入和软键盘输入;通过编制维吾尔文字库,为Windows CE.Net平台下维吾尔文字的显示、打印提供了基础.     

四（对-羟基苯基）卟啉氧合配合物的室温固相合成，表征及氧合能力

采用固相反应合成了四羟基苯基卟啉与与Fe^2＋,Co^2＋金属离子的配合物,在室温下,将其与分子O2作用,提纯后得到两种固态氧合配合物．通过元素分析、红外光谱（IR）、核磁共振氢谱（^1HNMR）、电导、热分析（TG／DTA）、紫外光谱（UV）等测试手段确定了氧合配合物的组成为[Co·THPP·O2]（NO3）2·2H2O、[Fe·THPP·O2]Cl2·2H2O]，可知1mol配合物吸收了1molO2,采用失重法测定了氧合配合物中的配位氧,确定1mol金属配合物吸收1molO2形成超氧配合物．     

Crystal structure and magnetic properties of two new cobalt selenite halides: Co5(SeO3)4X2 (X=Cl, Br)

Two new isostructural cobalt selenite halides Co₅(SeO₃)₄Cl₂ and Co₅(SeO₃)₄Br₂ have been synthesized. They crystallize in the triclinic system space group P−1 with the following lattice parameters for Co₅(SeO₃)₄Cl₂: a=6.4935(8) Å, b=7.7288(8) Å, c=7.7443(10) Å, α=66.051(11)°, β=73.610(11)°, γ=81.268(9)°, and Z=1. The crystal structures were solved from single-crystal X-ray data, R1=3.73 and 4.03 for Co₅(SeO₃)₄Cl₂ and Co₅(SeO₃)₄Br₂, respectively. The new compounds are isostructural to Ni₅(SeO₃)₄Br₂.Magnetic susceptibility measurements on oriented single-crystalline samples show anisotropic response in a broad temperature range. The anisotropic susceptibility is quantitatively interpreted within the zero-field splitting schemes for Co²⁺ and Ni²⁺ ions. Sharp low-temperature susceptibility features, at T_N=18 and 20 K for Co₅(SeO₃)₄Cl₂ and Co₅(SeO₃)₄Br₂, respectively, are ascribed to antiferromagnetic ordering in a minority magnetic subsystem. In isostructural Ni₅(SeO₃)₄Br₂ magnetically ordered subsystem represents a majority fraction (T_N=46 K). Nevertheless, anisotropic susceptibility of Ni₅(SeO₃)₄Br₂ is dominated at low temperatures by a minority fraction, subject to single-ion anisotropy effects and increasing population of S_z=0 (singlet) ground state of octahedrally coordinated Ni²⁺.     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p     

模式评价理论模型及其应用

基于事前评价过程和自然界生物进化过程的相似性，提出了系统结构、系统结构模式和系统环境模式矩阵的概念，并根据系统结构、系统结构模式与系统环境模式矩阵的适应程度，建立了模式评价决策模型，制定了评价系统的评价分类准则，并对评价系统作了一定的理论分析．将此模型和方法应用于城市生态安全评价中，通过与模糊综合评价法的比较，表明了该评价模型和方法的优越性．     

Tokamak中自举电流的剖面准直性

利用Harris模型,通过求解等离子体平衡方程,计算俘获粒子份额,分别对常规剪切和中心负剪切下tokamak中的自举电流的大小和剖面准直性进行了计算和分析.自举电流分布与等离子体平衡电流分布之间的剖面准直性可以通过调整等离子体的密度、温度和电流分布参数,以及描述等离子体形状的拉长度k和三角变形因子d来获得.中心负剪切位形有利于自举电流产生,并有好的剖面准直性.通过计算比较,分别在常规剪切位形下和中心负剪切位形下获得了一组优化的等离子体参数,在这组参数下,自举电流有较大的份额和好的剖面准直性 关键词： tokamak 自举电流 剖面准直性     

The Hadamard Theorem and Borel–Carathéodory Theorem on Riemann Surfaces

In this paper, we first define a kind of pseudo–distance function and annulus domain on Riemann surfaces, then prove the Hadamard Theorem and the Borel–Carathéodory Theorem on any Riemann surfaces. Supported by NSFC 10501052     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

一维无序体系电子跳跃导电研究

建立了电子隧穿电导模型,推导了一维无序体系新的直流电导公式.通过计算20000格点无序体系的直流电导率,分析了直流电导率和温度及外场电压的关系,讨论了无序度对直流电导的影响.计算结果表明,无序体系的直流电导率随无序度的增加而减小;外加电场较小时,电导率相对较大,且出现一系列峰值,电压较大时,电导率反而较小;无序体系在低温区出现了负微分电阻特性,电导率随温度的升高而增大,在高温区电导率随温度的升高而减小.计算结果和实验符合很好 关键词： 无序体系 电子隧穿 直流电导率