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The orange-red emitting phosphors based on M(2)Si(5)N(8):Eu (M = Sr, Ba) are widely utilized in white light-emitting diodes (WLEDs) because of their improvement of the color rendering index (CRI), which is brilliant for warm white light emission. Nitride-based phosphors are adopted in high-performance applications because of their excellent thermal and chemical stabilities. A series of nitridosilicate phosphor compounds, M(2-x)Si(5)N(8):Eu(x) (M = Sr, Ba), were prepared by solid-state reaction. The thermal degradation in air was only observed in Sr(2-x)Si(5)N(8):Eu(x) with x = 0.10, but it did not appear in Sr(2-x)Si(5)N(8):Eu(x) with x = 0.02 and Ba analogue with x = 0.10. This is an unprecedented investigation to study this phenomenon in the stable nitrides. The crystal structural variation upon heating treatment of these compounds was carried out using the in situ XRD measurements. The valence of Eu ions in these compounds was determined by electron spectroscopy for chemical analysis (ESCA) and X-ray absorption near-edge structure (XANES) spectroscopy. The morphology of these materials was examined by transmission electron microscopy (TEM). Combining all results, it is concluded that the origin of the thermal degradation in Sr(2-x)Si(5)N(8):Eu(x) with x = 0.10 is due to the formation of an amorphous layer on the surface of the nitride phosphor grain during oxidative heating treatment, which results in the oxidation of Eu ions from divalent to trivalent. This study provides a new perspective for the impact of the degradation problem as a consequence of heating processes in luminescent materials.  相似文献   
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In this paper we discuss the performance of the non-iterative state-specific multireference coupled cluster (SS-MRCC) methods accounting for the effect of triply excited cluster amplitudes. The corrections to the Brillouin-Wigner and Mukherjee's MRCC models based on the manifold of singly and doubly excited cluster amplitudes (BW-MRCCSD and Mk-MRCCSD, respectively) are tested and compared with exact full configuration interaction results for small systems (H(2)O, N(2), and Be(3)). For the larger systems (naphthyne isomers) the BW-MRCC and Mk-MRCC methods with iterative singles, doubles, and non-iterative triples (BW-MRCCSD(T) and Mk-MRCCSD(T)) are compared against the results obtained with single reference coupled cluster methods. We also report on the parallel performance of the non-iterative implementations based on the use of processor groups.  相似文献   
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Axisymmetric deformations of annular membranes subjected to normal surface loads and radial edge loads or displacements are considered within the Föppl nonlinear membrane theory. When the inner edger=a is free of radial traction, the solution of the annular membrane problem is shown to reduce to the solution for the circular membrane (a=0). For nonvanishing traction atr=a, the problem is reduced to a circular pseudo-membrane problem. For both cases, existence and uniqueness of tensile solutions of the annular membrane problem are proved, including a rigorous derivation of a stress concentration factor originally found by Schwerin by formal methods.  相似文献   
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The installation of a multi-sample beta-gamma coincidence spectrometer in an underground laboratory with a rock covering of 47 m yielded further background reduction by factors of between 10 (at 2 MeV) and about 4 (below 1 MeV). In silicon samples Fe can be measured by neutron activation analysis with a detection limit of 40 pg.  相似文献   
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The oxidation behaviour of -TiAl based alloys with different Nb contents (2–10 At.%) was investigated in air and in argon-20% oxygen at 900 °C using thermogravimetric analysis. The oxide scales were characterized by a combination of optical microscopy, SEM/EDX and X-ray diffraction analyses. Although in all studied cases the presence of niobium improves the oxidation resistance of -TiAl, the oxidation kinetics, scale morphology and composition in air differed strongly from that in argon-oxygen. In air the oxidation resistance increases with increasing niobium-content. In Ar/O2 the niobium dependence is far more complex because internal oxidation occurs which is favoured by the presence of niobium. SNMS analysis revealed that the differences in behaviour in the two atmospheres are related to the formation of Ti-rich nitride at the scale/alloy interface during air oxidation. The positive effect of niobium on the oxidation resistance of -TiAl is mainly caused by a decrease of the transport processes in the heterogeneous TiO2/Al2O3-surface scale. Nitride formation and/or niobium enrichment at the scale/alloy interface also affect the oxidation behaviour, however these factors are believed to be the result of the decreased transport processes rather than the main reason for the niobium effect.  相似文献   
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The oxidation behaviour of the oxide-dispersion strengthened (ODS) high-temperature alloys MA 956 (an aluminium oxide former) and MA 754 (a chromium oxide former) has been compared with that of two model alloys, Fe-20Cr-5Al and Ni-25Cr. The morphology and composition of the oxide scales were investigated by metallography, X-ray diffraction analysis and scanning electron microscopy. For analysis of the oxide layer growth mechanisms, twostage oxidation experiments with18O as tracer were used, the distribution of the oxygen isotopes in the oxide scale being determined by SIMS. The ODS alloys show a more selective oxidation than the two model alloys; moreover, the protective oxides on the ODS alloys have a lower growth rate and better adhesion than those on the two model alloys. From the SIMS investigations it can be deduced that the improved properties of the layers on the ODS alloys result from a change in the transport processes in the protective layer; whereas the aluminium and chromium oxide films on the conventional alloys grow by cation and anion transport, the scales on the ODS alloys grow almost exclusively by anion transport. It is shown that the observed properties of the oxide scales on the ODS alloys can be explained by this change in transport mechanism.Dedicated to Professor Günther Tölg on the occasion of his 60th birthday  相似文献   
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