Decomposition of EuPdIn and EuPtIn at high temperature and high pressure—formation of the hexagonal Laves phases EuPd0.72In1.28 and EuPt0.56In1.44

EuPd_0.72In_1.28 and EuPt_0.56In_1.44 were prepared under multianvil high-pressure (10.5 GPa) high-temperature (1500 and 1400 K) conditions from the precursor compounds EuPdIn and EuPtIn. They were investigated by X-ray diffraction on both powders and single crystals: MgZn₂-type, space group P6₃/mmc, a=578.7(1) pm, c=944.9(3) pm, wR2=0.0734, 263 F² values for EuPd_0.72In_1.28 and a=591.1(2) pm, c=933.8(2) pm, wR2=0.0853, 151 F² values for EuPt_0.56In_1.44 with 13 variable parameters per refinement. Both structures are built up from face- and corner-sharing tetrahedra of palladium (platinum) and indium atoms. The europium cations are located in cavities within the three-dimensional [Pd_0.72In_1.28] and [Pt_0.56In_1.44] networks. The 2a and 6 h positions of the tetrahedral networks show mixed Pd/In and Pt/In occupancy in EuPd_0.72In_1.28 and EuPt_0.56In_1.44, respectively. The crystal chemistry of these indides is briefly discussed.     

PHYTOCHROME MEDIATION OF UREDOSPORE GERMINATION IN THE FUNGUS PUCCINIA GRAMINIS

Abstract—Applying criteria used for higher plants, phytochrome mediation of uredospore germination in the stem-rust fungus, Puccinia graminis f. sp. tritici (Eriks & Henn) Guyot is established. A 1 min red irradiation at 660 nm promotes uredospore germination and this potentiation of promotion is photoreversible by a 1 min far-red irradiation at 730 nm.     

CO laser stabilization using the optogalvanic Lamb-dip

Frequency stabilization of the CO laser using a CO lamb-dip is achieved in the range from 5.0–6.3 m. The CO saturation signal is obtained from a low-pressure discharge in absorption and is detected using optogalvanic, detection. The frequency stability and reproducibility has been verified to be better than 100 kHz; this is an improvement of more than one order of magnitude compared with locking techniques using CO laser gain profiles.Alexander von Humboldt Awardee from National Bureau of Standards, Boulder, Colorado, USA     

Analysis of the 3-dimensional electron distribution in silicon using directional Compton profile measurements

A method of reconstructing the electron momentum density (p), and its Fourier transform,B(t), from a series of directional Compton profiles is described. It is based on a double Fourier inversion technique and an expansion in lattice harmonic functions. The effect of random errors has been analysed, and the implications for the data collection discussed. We have used the reconstruction technique to obtain (p) andB(t) for silicon from six directional Compton profiles measured with 412 KeV gamma-radiation. The experimental result is in good agreement with earlier measurements and with available solid state theories. A recent Wannier function calculation for silicon using orthogonalised bond orbitals provides a useful tool for identifying the physical origins of the observed anisotropies. A comparison between the information presented in position and momentum space shows that the ease of interpretation depends upon the degree to which the various interactions give rise to localised features in each representation.