Rydberg states with a 2Π core: The b3Πi and C1Π states of DCl

The rotational structure in the lowest Rydberg complex of hydrogen chloride, [X²Π]4sσ, was reinvestigated. The study is limited to the spectrum of D³⁵Cl, the HCl bands being too diffuse for a detailed analysis of second-order effects. The Λ-type doubling in both component states, b³Π_i and C¹Π, is small since it arises from the uncoupling of the core rather than Rydberg orbital angular momentum. It can be interpreted in terms of pure precession relations that are known to exist between the ground and first excited states of DCl⁺. By contrast, the spin-orbit interactions, also originating in the core, are strong. In addition to distorting the triplet splitting in b³Π, they lead to an avoided crossing between the nearly coinciding levels b³Π₀ (v = 1) and C¹Π₁ (v = 0). They are also responsible for anomalies in the b³Π₀ ← X¹Σ⁺R-branch intensities of DCl as well as of HBr, DBr, and HI. From the J values at the observed R-branch minima we have estimated the ratio $\text{μ}{}_{\mathrm{\parallel }}\text{μ}{}_{\mathrm{\perp }}$ of the transition moments associated with the excitation of a 3pσ or 3pπ core electron to the 4sσ Rydberg orbital of DCl and, correspondingly, of the other hydrogen halides.     

Polarization dynamics of intracavity frequency-doubled Nd:YAG laser

Experimental study of low-frequency dynamics of an intracavity frequency-doubled Nd:YAG laser demonstrates the influence of the interaction of orthogonally polarized modes, participating in frequency doubling (type II phase matching), on the stability of the laser output. At a sufficiently low pump rate and low conversion efficiency, the laser shows stable operation with a low noise level at the frequencies of relaxation oscillations. At a high pump power and/or a high conversion efficiency, the laser emission becomes unstable as a result of Hopf bifurcation at the frequencies of relaxation oscillations that are responsible for the anti-phase polarization dynamics of the laser.     

Continuous-wave simultaneous dual-wavelength operation at 912 nm and 1063 nm in Nd:GdVO<Subscript>4</Subscript>

A continuous-wave, diode-pumped Nd:GdVO₄ thin disk laser with simultaneous dual-wavelength emission at the 912 nm ⁴ F _3/2→⁴ I _9/2 quasi-three-level transition and the 1063 nm ⁴ F _3/2→⁴ I _11/2 four-level transition is demonstrated and analyzed. Output powers of 1.7 W at 912 nm and of 1.6 W at 1063 nm were achieved simultaneously from a 0.3-at.%, 300-μm thick Nd:GdVO₄ crystal that was multi-pass excited with 26.8 W of available diode pump power. Second harmonic generation to 456 nm with LiB₃O₅ yielded 0.96 W in 912 nm single-wavelength operation and 0.73 W in 912 nm/1063 nm dual-wavelength operation. PACS 42.55.Rz; 42.60.By; 42.65.Ky     

Onset of quark-hadron duality in pion electroproduction

A large data set of charged-pion (pi+/-) electroproduction from both hydrogen and deuterium targets has been obtained spanning the low-energy residual-mass region. These data conclusively show the onset of the quark-hadron duality phenomenon, as predicted for high-energy hadron electroproduction. We construct several ratios from these data to exhibit the relation of this phenomenon to the high-energy factorization ansatz of electron-quark scattering and subsequent quark-->pion production mechanisms.     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy

In this work, we investigated the stoichiometry of oxygen precipitates in Czochralski silicon wafers. The thickness dependence of the Cliff–Lorimer sensitivity factor for the silicon/oxygen system was determined and applied for the investigation of the stoichiometry of oxygen precipitates by EDX. The results show that both plate‐like oxygen precipitates and a transitional form between plate‐like and octahedral precipi‐ tates consist of SiO₂. This was confirmed by EELS low loss spectra where the typical spectrum for amorphous SiO₂ was observed. Moreover, the absorption band of plate‐like precipitates at 1227 cm^–1 was found in the low temperature FTIR spectrum. It was demonstrated that this band can only be simulated by the dielectric constants of amorphous SiO₂. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)