An Algorithm to Construct <Emphasis Type="BoldItalic">k</Emphasis>-Regular <Emphasis Type="BoldItalic">k</Emphasis>-Connected Graphs with the Maximum <Emphasis Type="BoldItalic">k</Emphasis>-Diameter

 Let f(2m,k) be the Maximum k-diameter of k-regular k-connected graphs on 2m vertices. In this paper we give an algorithm and prove that we can construct k-regular k-connected graphs on 2m vertices with the maximum k-diameter using it. We also prove some known results about f(2m,k) and verify that we can get some unknown values of f(2m,k) by our algorithm. Received: December 1, 2000 Final version received: March 12, 2002 Acknowledgments. We thank the referee for many useful suggestions.     

On Vector Quasi-Equilibrium Problems with Set-Valued Maps

In this paper, we introduce a new class of vector quasi-equilibrium problems with set-valued maps. Almost all the vector equilibrium models of the Blum-Oettli type in the literature are special cases of our new class of equilibrium problems under consideration. Moreover, a number of C-diagonal quasiconvexity properties are proposed for set-valued maps, which are natural generalizations of the -diagonal quasiconvexity for real functions. Together with an application of continuous selection and fixed-point theorems, these conditions enable us to prove unified existence results of solutions for such vector equilibrium problems.     

离子束引起的在Al／Cr双层薄膜界面处的原子混合

用600keV的Kr~ 离子轰击Al/Cr双层薄膜样品进行界面原子反应及相互混合的研究。实验样品是在单晶硅上蒸镀约500nm厚的铝膜,相继再蒸上所需厚度的铬膜而制成的。轰击剂量为2.0×10~(15)-2.5×10~(16)Kr~ /cm~2。用2.0MeVa粒子对轰击前后的样品进行了卢瑟福背散射(RBS)分析,发现界面处有明显的原子混合存在;当轰击剂量≥1.0×10~(16)Kr~ /cm~2时,RBS谱出现有明显的坪台,经拟合计算和x射线衍射(XRD)测量证实确有化合物Al_(13)Cr_2存在;还分别得到了原子混合量及混合效率与轰击剂量的关系;最后对界面处的原子混合机制进行了讨论。     

Ge_x Si_(1-x)/Si超晶格中纵声学声子的喇曼散射强度研究

本文用光弹理论,在全面考虑了超晶格中两种材料的声速,质量密度和光弹常数存在差别的基础上,计算了Ge_xSi_(1-x)/Si超晶格中折迭纵声学声子的喇曼散射强度,在高达50cm~(-1)的频率范围内,理论值和实验符合得很好。     

Halogen bond between hypervalent halogens YF3/YF5 (Y=Cl,Br, I) and H2X (X= O,S, Se)

ABSTRACT

The complexes of H₂X (X?=?O, S, Se) with hypervalent halogens YF₃ and YF₅ (Y?=?Cl, Br, I) have been studied. The σ-hole on the Y atom participates in a halogen bond with the lone pair on the chalcogen atom. In addition, some secondary interactions coexist with the halogen bond in most complexes. The interaction energy correlates with the nature of both X and Y atoms. In most cases, the complex is more stable for the heavier Y atom and the lighter X atom. Of course, there are some exceptions in H₂X···YF₃. YF₃ forms a more stable complex with H₂X than does YF₅. These complexes are dominated by electrostatic interaction and the halogen bond involving H₂S and H₂Se exhibits some covalent character.

Halogen bond plays an important role in chemical reactions and multivalent halogens can regulate chemical reactions by participating in a halogen bond. Thus we compare the effect of the chalcogen electron donor on the strength and nature of halogen bonding involving multivalent halogens.     

Applications of Markov spectra for the weighted partition network by the substitution rule

The weighted self-similar network is introduced in an iterative way. In order to understand the topological properties of the self-similar network, we have done a lot of research in this field.Firstly, according to the symmetry feature of the self-similar network, we deduce the recursive relationship of its eigenvalues at two successive generations of the transition-weighted matrix.Then, we obtain eigenvalues of the Laplacian matrix from these two successive generations.Finally, we calculate an accurate expression for the eigentime identity and Kirchhoff index from the spectrum of the Laplacian matrix.     

大规模合成具有氧空位的多孔Bi2O3用于有效降解亚甲基蓝

光催化降解有机污染物由于其具有低能耗和绿色环保的特点,已经成为研究的热点. 氧化铋纳米晶体的带隙在2.0∽2.8 eV之间,利用它催化可见光降解有机污染物具有较高的活性,从而引起了越来越多的关注. 尽管近年来已经开发了几种制备Bi₂O₃基半导体材料的方法,但是仍然难以用简单的方法大规模地制备高活性的Bi₂O₃催化剂. 因此,开发简单可行的大规模制备Bi₂O₃纳米晶体的方法对于工业废水处理的潜在应用具有重要意义. 本文通过蚀刻商用BiSn粉末,然后进行热处理,成功地大规模制备了多孔Bi₂O₃. 获得的多孔Bi₂O₃在亚甲基蓝(MB)的光催化降解中表现出优异的活性和稳定性. 对该机理的进一步研究表明,多孔Bi₂O₃合适的能带结构允许生成活性氧物种,例如O₂^-·和·OH,可有效降解MB.     

气力提升系统气液两相流数值模拟分析

污水处理、油田采油、液态金属冷却反应堆和磁流体动力转换器等领域采用气力提升系统有其显著优势.由于不同液体介质与气体介质密度对气力提升系统性能影响较大,因此本文基于Fluent仿真软件,采用欧拉模型、k-ω剪切应力输运湍流模型数值模拟了氮气-水、氮气-煤油、氮气-水银及空气-水、氩气-水、氮气-水下气力提升系统内气液两相流动行为,分析了系统稳定时提升立管内气相体积分数、提升液体流量、提升效率、提升管出口处液体径向速度的变化规律.研究结果表明:1)氮气-水、氮气-煤油、氮气-水银系统中,提升管内液体介质密度越大,提升管内气相体积分数越小、提升液体流量越大、提升效率越高;2)空气-水、氩气-水、氮气-水系统中,提升管内气体介质密度越大,提升管内气相体积分数越小、提升液体流量越大、提升效率峰值越小;3)提升管出口处提升液体径向速度随气体充入量的不断增加而整体波动升高,最终管轴中心附近液体速度较大,管壁附近液体速度较小.本文研究成果为污水处理、气举采油、液态重金属冷却核反应堆和磁流体动力转换器等应用领域的气力提升技术的优化提供科学的理论基础.     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.