Time-clustering behavior of sharp fluctuation sequences in Chinese stock markets

Sharp fluctuations (in particular, extreme fluctuations) of asset prices have a great impact on financial markets and risk management. Therefore, investigating the time dynamics of sharp fluctuation is a challenge in the financial fields. Using two different representations of the sharp fluctuations (inter-event times and series of counts), the time clustering behavior in the sharp fluctuation sequences of stock markets in China is studied with several statistical tools, including coefficient of variation, Allan Factor, Fano Factor as well as R/S (rescaled range) analysis. All of the empirical results indicate that the time dynamics of the sharp fluctuation sequences can be considered as a fractal process with a high degree of time-clusterization of the events. It can help us to get a better understanding of the nature and dynamics of sharp fluctuation of stock price in stock markets.     

Effects of Nb and Si on densities of valence electrons in bulk and defects of Fe3Al alloys

Positron lifetime measurements have been performed in binary Fe₃Al and Fe₃Al doping with Nb or Si alloys. The densities of valence electrons of the bulk and microdefects in all tested samples have been calculated by using the positron lifetime parameters. Density of valence electron is low in the bulk of Fe₃Al alloy. It indicates that, the 3d electrons in a Fe atom have strong-localized properties and tend to form covalent bonds with Al atoms, and the bonding nature in Fe₃Al is a mixture of metallic and covalent bonds. The density of valence electron is very low in the defects of Fe₃Al grain boundary, which makes the bonding cohesion in grain boundary quite weak. The addition of Si to Fe₃Al gives rise to the decrease of the densities of valence electrons in the bulk and the grain boundary thus the metallic bonding cohesion. This makes the alloy more brittle. The addition of Nb to Fe₃Al results in the decrease of the ordering energy of the alloy and increases the density of valence electron and the bonding cohesion of the grain boundary. However, since the radius of Nb atom is larger than that of Fe atom, when Nb atoms substitute for Fe atoms, they will distort the lattice and enlarge the volume of the lattice, which decreases the density of valence electron and the cohesion of metallic bond in the bulk of the alloy. Project supported by the National Natural Science Foundation of China (Grant No. 59561001) and the Foundation of Guangxi Education Committee.     

用频谱分析法测量声光驻波调制器的调制度

从调制的基本概念出发，指出声光驻波调制器件为宽带频率调制型。讨论了调制度概念的成立条件和适用范围。理论上求出其成立条件为ｖ＜０．９（ｖ＝２πＬ△ｕ／λ为衍射光强Ｉ（θ，ｔ）中的自变量）。鉴于一般驻波型声光器件都是含有一定的行波成份，但行波声场和驻波声场在拉曼－奈斯衍射范围内衍射角均遵从ｓｉｎθｍｉ＝土ｍλ／，故两者在空间上是无法分开的。文中给出了从频域上测量调制度Ｍ的一种新方法。并给出了零级和一般衍射光的测量值。     

On a “lack of memory” property

For two independent nonnegative random variablesX andY we say thatX is ageless relative toY if the conditional probability P[X> Y+x|X>Y] is defined and is equal to P[X>x] for allx>0. Suppose thatX is ageless relative to a nonlatticeY with P[Y=0]<P [Y<X]. We show that the only suchX is the exponential variable. As a corollary it follows that exponential variable is the only one which possesses the ageless property relative to a continuous variable. Research partially supported by NRC of Canada grants #A8057 and #T0500. Work partially completed while on leave at Division of Math. Stat., C.S.I.R.O., Australia.     

Theory of strain relaxation for epitaxial layers grown on substrate of a finite dimension

We present an equilibrium theory for strain relaxation in epitaxial layers grown on substrates of a finite dimension. The conventional dislocation model is refined to take account of the multiple reflection of image dislocations. The effect of strain transfer and dilution due to finite vertical and lateral dimensions of the substrate is also considered. The critical thickness has been obtained based on an energy balance approach. Detailed numerical analysis with primary experiments for the SiGe alloy system is also provided.     

The existence and uniqueness of mild solutions for impulsive fractional equations with nonlocal conditions and infinite delay

This paper is mainly concerned with the existence and uniqueness of mild solutions for fractional impulsive neutral functional infinite delay integrodifferential systems with nonlocal initial conditions. The results are obtained by the fixed point theorem combined with a strongly continuous operator semigroup.     

掺铒光纤激光器中自脉冲的控制

在实验中观察到了掺铒光纤激光器中自脉冲，并通过加反馈的方法控制了自脉冲。在理论上利用带反馈的两激光器的耦合模型，成功地解释了自脉冲的产生及其控制的物理机制。结果表明，掺铒光纤激光器中两正交偏振态的反馈及其耦合对光脉冲的形成及控制的重要性。     

Electrical properties of modified TZP(+TiO2,FeOx)

1 to 24 mol% TiO₂ and FeO_X were added to 3.2 mol% Y₂O₃ doped ZrO₂ (Z3Y) to obtain tetragonal zirconia polycrystals (TZP) with modified electronic properties. The materials were prepared by coprecipitation which allows to obtain fine, homogeneous and sinteractive powders. The solubility of TiO₂ in Z3Y can reach 24 mol%, while the maximum solubility of FeO_x is about 8 mol%. The impedance results show a decrease of the bulk and total conductivity of titania doped TZP with increasing titania concentration, while those of FeO_x doped TZP show only minor changes. The Hebb-Wagner polarization method was applied to evaluate the partial hole and electron conductivities. Three models are presented to interpret the polarization curves. 1.6 mol% FeO_x doped TZP has higher hole conductivity in air, while titania doped TZP has higher electronic conductivity at low oxygen partial pressures as compared to pure Z3Y. Paper presented at the 1st Euroconference on Solid State Ionics, Zakynthos, Greece, 11–18 Sept.1994     

Approach to Generate Radiometric Images

A new technique to generate radiometric images from the optical images is introduced in this paper. This technique can be applied in generating the source images for purpose of image-matching navigation. For comparison, two radiometric images are presents, one is imaged by a 8mm ground-based radiometer and the other is generated by this technique.     

High-brightness white light-emitting organic electroluminescent devices using poly(N-vinylcarbazole) as a hole-transporter

A white light-emitting organic electroluminescent (EL) device with multilayer thin-film structure, which shows high-brightness and high-efficiency, is demonstrated. The device structure of glass substrate/indium–tin oxide/poly(N-vinylcarbazole) (PVK)/1,1,4,4-tetraphenyl-1,3-butadiene/8-(quinolinolate)-aluminum (Alq) doped with 5,6,11,12-tetraphenylnaphthacene/Alq/Mg/Al was employed. The turn-on voltage is as low as 2.5 V. The white light emission covers a wide range of the visible region, and the Commission Internationale de 1' Eclairage coordinates of the emitted light are (0.319, 0.332) at 10 V. Bright white light, over 20 000 cd/m², was successfully obtained at about 18 V, and the maximum efficiency reaches to 1.24 lm/W at 9 V. The reasons of obtaining high level EL properties of our device have been discussed.