制备工艺对电子俘获材料性能的影响

利用等离子体质谱(ICP-MS)技术测试了硫化助熔剂法和稀土直接掺杂工艺合成电子俘获材料的化学计量比,结果表明,采用稀土直接掺杂工艺合成材料的化学计量比更接近设计值;通过分析电子俘获材料的发光机制和光谱测试结果,讨论了制备工艺条件对电子俘获材料中稀土离子化合价的影响.     

由因式化L算子所构成的经典可积动力学体系

用因式化的L算子构造了一类在非周期边界条件下的可积模型.对体系的transfer矩阵取三角和标度极限情况下,得到了n维体系(n为奇数)的经典哈密顿量的具体形式.结果表明,这类可积体系与Calogero等人所发现的一系列可积体系是相类似的.     

超短脉冲激光选通电子学全息成象系统研究

本文介绍了最早到达光概念,分析了超短脉冲激光电子学全息实现选通最早到达光成象的原理.用超短脉冲激光拍摄全息图,相当于用多色光记录全息图,当用单色光再现这种全息图时,会给再现象造成一个模糊量.在一般全息理论中,只讨论了采用单色光记录全息图,复色光再现所造成的模糊量.因此,本文中讨论的是一个与此相反的问题,即用多色光记录全息图,单色光再现的情况,并且着重讨论了超短脉冲激光记录全息图的情况.最后得出结论,在用超短脉冲激光拍摄全息图时,最好采用象面全息术.     

新试剂N—己基—N‘—（氨基对苯磺酸钠）硫脲（HXPT）的合成及其 …

A new reagent N-Hexyl-N'-(sodium aminobenzenesulfonate) thiourea (HXPT) was synthesized. Its structure was also characterized. A new spectrophotometric method of determining Pd2+ was developed based on the new reagent. In the range of pH 5.4-5.8 Pd2+ forms a stable yellow complex with HXPT in the presence of CTMAB,and its apparent molar absorptivity is 2. 21 x 10(5) L x mol(-1) x cm(-1) at the maximum absorption wavelength 296.8 nm. Beer's law is obeyed in the range of 1-7 microg x 25 mL(-1) for Pd2+. This method has been used for the determination of trace Pd2+ in ores and catalyst with satisfactory results.     

Zn Belavin模型反射方程的多参数解

利用A_(n－1)⁽¹⁾面模型反射方程的对角解,得到了ZnBelavin模型反射方程的含有n+1个参数的解.当n=2时,其结果与侯伯宇等人给出的8项角反射方程的解是一致的.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

Majorana fermions induced fast- and slow-light in a hybrid semiconducting nanowire/superconductor device

We investigate theoretically Rabi-like splitting and Fano resonance in absorption spectra of quantum dots(QDs)based on a hybrid QD-semiconducting nanowire/superconductor(SNW/SC)device mediated by Majorana fermions(MFs).Under the condition of pump on-resonance and off-resonance,the absorption spectrum experiences the conversion from Fano resonance to Rabi-like splitting in different parametric regimes.In addition,the Fano resonances are accompanied by the rapid normal phase dispersion,which will indicate the coherent optical propagation.The results indicate that the group velocity index is tunable with controlling the interaction between the QD and MFs,which can reach the conversion between the fast-and slow-light.Fano resonance will be another method to detect MFs and our research may indicate prospective applications in quantum information processing based on the hybrid QD-SNW/SC devices.     

颗粒介质的离散态特性研究

回顾了颗粒介质中应力的分布和传播模式以及物体在颗粒介质中运动所受阻力的研究进展，并报道了我们对颗粒体系中代表离散特性的颗粒尺寸效应对颗粒介质特性影响的研究.研究发现物体由于自身重量在颗粒介质中下沉的深度随着颗粒尺寸的增大单调减小；球体在下陷过程中受到的颗粒床的支撑力，除了在约1 mm范围的表面作用区域以外，与下陷深度之间满足很好的幂率关系，幂值在1.5—1.0之间，并且此幂值随着颗粒尺寸的增大而单调减小.颗粒床的支撑力与下陷深度的幂率关系可解释为颗粒介质内部应力结构重组的宏观反应结果. 关键词： 颗粒物质 离散介质力学     

MgF2单晶的THz光谱研究

利用THz时域光谱技术对MgF₂晶体(样品1)和MgF₂：Co晶体(样品2)在0.5—2.5 THz的吸收特性进行了研究.在0.5—2.5 THz波段，样品1吸收系数α(ν)随频率ν增加而增大，最大值为24 cm^-1.样品2的吸收系数比样品1大得多，Co掺杂使晶格吸收带边向低频移动，而且样品2在1.9 THz有吸收峰，吸收系数达到70 cm^-1，由此求出F^--Co²⁺离子键伸缩振动的键力常数K为3.40×10^-2　N/cm.这一结果表明，THz光谱分析有可能成为研究晶体化学键的一种重要手段.利用光学常数之间的关系计算了两个样品在0.5—2.5 THz的介电函数的实部ε₁(ν)，得到样品1的ε₁(ν)值在4.67至4.73之间，样品2的ε₁(ν)值在4.62至5.01之间. 关键词： THz辐射 光谱 2晶体')" href="#">MgF₂晶体     

质子交换MgO:LiNbO3波导的双层结构

本文报导MgO:LiN_bO₃质子交换波导X射线双晶衍射和红外吸收的实验结果。这些结果表明质子交换波导由浅表面层和深表面层构成。浅表面层是一个连续应变层,有着大量随机排列的O—H—O形式的缔合OH^-基团。深表面层是一个均匀应变层,其内H⁺以自由OH^-基团形式出现。质子交换波导折射串不稳定性与双层结构中的结构驰豫密切相关。通过对质子交换过程的分析,提出两条避免双层结构的途径,其一为降低交换剂中的H⁺浓度,另一条是采用有限源工艺。