Plasma synthesis of nanopowders

There is a huge variety of plasma processes for synthesis of nanoparticulate powders. They may be grouped with respect to operating temperature, which is the essential parameter with respect to the properties of the products. In view of industrial production, the highest degree of maturity is found in high temperature processes working under ambient pressure. For products, where well-defined properties are demanded, low temperature microwave plasma processes are best suited. Additionally, these processes allow coating of the produced particles, even with organic phases. Other processes where plasmas are involved, such as laser or flame processes coupled with electric fields have, to some extent, a high potential for development.     

Detection of quantum critical points by a probe qubit

Quantum phase transitions occur when the ground state of a quantum system undergoes a qualitative change when an external control parameter reaches a critical value. Here, we demonstrate a technique for studying quantum systems undergoing a phase transition by coupling the system to a probe qubit. It uses directly the increased sensibility of the quantum system to perturbations when it is close to a critical point. Using an NMR quantum simulator, we demonstrate this measurement technique for two different types of quantum phase transitions in an Ising spin chain.     

激光光束传输因子M~2的一些问题

本文讨论与 M2 因子有关的一些问题 ,指出在近轴近似条件下由光束的二阶强度矩定义的 M2 因子满足 M2 ≥ 1 ,其中只有对基模高斯光束等式才成立 .由光束的功率通量值定义的 M2 因子 ( M2pc)有可能小于 1 ,M2pc的大小取决于所定义的光斑半径内包含的光功率的百分数 .通过计算光场的二阶矩 ,我们获得了轴向相干叠加的高斯光束的 M2 因子的解析解     

Microscopic study of a lattice defect trapped at in impurities in plastically deformed Al

¹¹¹In doped Al specimes (c _In1 ppm) were cold worked by extension at 77 K to several amounts of strain. The PAC method was applied to study the trapping of lattice defects at the indium impurities between 77 K and 293 K. From electron irradiation experiments it is known that the In probes are suitable traps for self-interstitials in Al. Since in the present experiment no such effect is observed, it is concluded that by extension at 77 K in Al essentially no freely migrating interstitials are created. Between 110 K and 210 K an increasing fraction of the indium impurities traps a well defined defect. The symmetry axis of the resulting indium-defect-complex is found to point along 111 crystallographic directions. It is proposed that the In impurity traps a divacancy at nearest neighbour sites and relaxes into the open space, thus forming an equilateral triangle of three vacancies in a {111} plane with the In atom in its centre. Reasons for the formation of this complex at rather low annealing temperatures are discussed.     

Observation of B(+)-->phiphiK(+) and evidence for B(0)-->phiphiK(0) below eta(c) threshold

We report measurements of the decays B(+)-->phiphiK(+) and B(0)-->phiphiK(0) using a sample of 231 x 10(6) BB pairs collected with the BABAR detector at the PEP-II asymmetric-energy B factory at the Stanford Linear Accelerator Center. The branching fractions are measured to be B(B(+)-->phiphiK(+))=(7.5+/-1.0(stat)+/-0.7(syst)) x 10(-6) and B(B(0)-->phiphiK(0))=(4.1(-1.4)(+1.7)(stat)+/-0.4(syst)) x 10(-6) for a phiphi invariant mass below 2.85 GeV/c(2).