2 1维5U(2)0￣( )胶球波函数的四级近似

利用截断本征方程方法计算胶球波函数参数比值，得到良好的标度行为。关键词     

S_fS_(f-1)约化系数的解析表式

利用线性方程方法和解析延拓得到了导出置换群Sf Sf- 1约化系数解析表达式的一种简单的代数计算方法 .着重讨论了无重复度时Sf Sf- 1约化系数解析表达式的推导方法 .作为例子 ,给出了关于置换群内积 [f- 1,1]·[f- 1,1]和 [f - 1,1]·[f - 2 ,1,1]有关的所有Sf Sf- 1约化系数的解析表达式 .     

复层籽晶制备单晶畴YBCO超导块材

本文介绍了沿c轴方向排布复层籽晶制备YBCO超导单畴的方法.该方法能够使123晶畴在不同深度进行生长.通过c轴方向籽晶的排布,研究了YBCO单畴中的(001)/(001)晶界.虽然由于压模中籽晶ab面的倾斜,造成部分(001)/(001)晶界出现大角晶界,使晶界上残余有液相,但仍有晶界连接良好、晶界上不存在残余液相和211粒子、错配角小于5°的(001)/(001)晶界的形成.对于制备有深度要求的单畴块材,复层籽晶法是一种有效的生长方法.在定向控制好籽晶方向的条件下,该方法可以提高超导单畴的生长深度.在77K,0.5T下,测试该样品磁悬浮力达到37N.     

Pt/Ti Electrodes of PZT Thin Films Patterning by Novel Lift-Off Using ZnO as a Sacrificial Layer

We achieve a successful novel lift-off of patterning Pt/Ti electrodes on SiO2/Si substrates by employing ZnO sacrificial layer deposition and patterning, successive uniform Pt/Ti deposition and final lift-off. Then we deposit PZT thin films on the electrodes. Compared with the conventional lift-off processes for the electrodes, this novel process does not need post-annealing, which must be performed after conventional lift-off process. It is demonstrated that the electrodes patterned by the novel lift-off process have stronger adhesion. The electrodes and the PZT films on the electrodes are more compact and smoother than those by the conventional lift-off process.     

两种烷基碘化物分子C—I键解离的从头计算

分别采用多组态自洽场方法和二阶多组态准简并微扰论方法,计算了烷基碘化物分子CF₃I和C₂H₂F₃I沿C—I键的绝热势能曲线和垂直激发能. 结果发现,这两种分子的低激发态均为排斥态;基态的解离能分别为2.473eV和2.835eV,其中前者与实验结果符合较好. 关键词： 烷基碘化物分子 解离能 势能曲线     

场致发射显示器驱动电路研究进展及其性能研究

场致发射显示是一种新型的平板显示技术,场致发射显示器继承了传统的阴极射线管显示器的优良特性,兼有液晶等薄型平板显示器的优点,具有广阔应用前景。介绍了几种不同阴极结构的场发射显示器工作原理及相应的驱动电路,分析并比较了二极管型和三极管型两种场致发射显示器的驱动电路,对新型场致发射平板显示器的理论研究具有参考意义。     

具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管

介绍了一种具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管。采用原子层淀积(ALD)方法实现Al₂O₃栅介质的沉积。槽栅常关型AlGaN/GaN MOS-HEMT的栅长(L_g)为2 μm,栅宽(W_g)为0.9 mm(0.45 mm×2),栅极和源极(L_gs)之间的距离为5 μm,栅极和漏极(L_gd)之间的距离为10 μm。在栅压为－20 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电仅为0.65 nA。在栅压为+12 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电为225 nA。器件的栅压摆幅为－20~+12 V。在栅压V_gs=+10 V时,槽栅常关型AlGaN/GaN MOS-HEMT电流和饱和电流密度分别达到了98 mA和108 mA/mm (W_g=0.9 mm), 特征导通电阻为4 mΩ·cm²。槽栅常关型AlGaN/GaN MOS-HEMT的阈值电压为+4.6 V,开启与关断电流比达到了5×10⁸。当V_ds=7 V时,器件的峰值跨导为42 mS/mm (W_g=0.9 mm,V_gs=+10 V)。在V_gs=0 V时,栅漏间距为10 μm的槽栅常关型AlGaN/GaN MOS-HEMT的关断击穿电压为450 V,关断泄露电流为0.025 mA/mm。     

Optical wavelet de-noising applied in multi-span nonlinear fiber links

In this work, optical wavelet de-noising with several different types of wavelets such as db4, coif4 and dmey wavelet was applied at the end of the 40 Gbit/s multi-span intensity-modulated fiber communication systems. The results of numerical simulations carried out in different fiber links demonstrated that the optical wavelet de-noising method could remove the random amplitude fluctuation induced by the interaction of EDFA’s ASE noise and optical fiber’s dispersion and nonlinearity. The SNR and BER curves of the optical bit sequence without and with optical wavelet de-noising in dispersion compensation fiber link were plotted to show the effectiveness of the wavelet de-noising in the fiber-optic communication systems and wavelet de-noising with demy wavelet can achieve better result than with other type wavelet.     

Progress of Jinping Underground laboratory for Nuclear Astrophysics (JUNA)

Jinping Underground laboratory for Nuclear Astrophysics(JUNA) will take the advantage of the ultra-low background of CJPL lab and high current accelerator based on an ECR source and a highly sensitive detector to directly study for the first time a number of crucial reactions occurring at their relevant stellar energies during the evolution of hydrostatic stars. In its first phase, JUNA aims at the direct measurements of~(25)Mg(p,γ)~(26)Al,~(19)F(p,α)~(16)O,~(13)C(α,n)~(16)O and ~(12)C(α,γ)~(16)O reactions. The experimental setup,which includes an accelerator system with high stability and high intensity, a detector system, and a shielding material with low background, will be established during the above research. The current progress of JUNA will be given.     

描述大形变核中对力的硬核Bose-Hubbard模型

讨论了一种描述大形变偶偶核邻近轨道对力相互作用近似的硬核Ｂｏｓｅ－Ｈｕｂｂａｒｄ模型．利用代数方法得到了该模型对激发谱和相应波函数的严格解．该结果可推广到具有任意自旋和有限格点的硬核Ｂｏｓｅ－Ｈｕｂｂａｒｄ和Ｆｅｒｍｉ－Ｈｕｂ－ｂａｒｄ模型中去．