前端接触势垒高度对非晶硅和微晶硅异质结太阳电池的影响

运用AMPS-1D（Analysis of Microelectronic and Photonic Structures） 程序系统分析了前端接触（铟锡氧化物）的势垒分别对非晶硅和微晶硅太阳电池性能的影响,比较了两种影响的差异并分析了具体原因. 研究表明：与微晶硅相比,非晶硅受铟锡氧化物功函数Φ_ITO的影响更加显著. 随着Φ_ITO的增加非晶硅的各项物理性能（如太阳电池效率、填充因子等）得到明显改善,而微晶硅的各项参数虽然也随Φ_ITO增加而改变,但更容易趋于饱和. 模拟结果显示,在实际的太阳电池装备过程中可根据前端电极的性能来选择合适的p型硅材料. 关键词： 铟锡氧化物 非晶硅 微晶硅 计算机模拟     

液体冷媒融霜系统回液时间的实验研究

对液体冷媒融霜系统的回液时间进行实验研究。在保温体温度-15℃工况下分别对回液时间7s、27s、25s、30s、40s、50s进行实验,记录并分析被融霜蒸发器融霜前和回液时间内压缩机吸气口的温度和压力变化,相机拍摄制冷压缩机吸气口和机身的结霜状况。实验表明:回液时间7s时,压缩机吸气过潮,回液时间在27s左右可以避免压缩机吸气过潮,确保系统安全正常的运行,大于27s被融霜蒸发器恢复制冷时间过长将影响库房温度的稳定并降低制冷系统的效率。     

All-silicon chiral metasurfaces and wavefront shaping assisted by interference

The usage of full-color imaging in digital pathology produces significant results. Compared with a grayscale image or a pseudocolor image containing contrast information, a full-color image can identify and detect the target object better with color texture information. Fourier ptychographic microscopy(FPM) is a high-throughput computational imaging technique that breaks the tradeoff between high resolution(HR) and a large field of view. It also eliminates the artifacts of scanning and stitching in digital pathology and improves its imaging efficiency. However, the conventional full-color digital pathology based on FPM is still time-consuming because of the repeated experiments with tri-wavelengths. A color transfer FPM approach termed "CFPM" was reported. The color texture information of a low-resolution full-color pathologic image is directly transferred to the HR grayscale FPM image captured by only a single wavelength. Both of the color space of FPM based on the standard CIE-XYZ color model and the display based on the standard RGB color space were established. Different FPM colorization schemes were analyzed and compared with 30 biological samples. Three types of evaluation approaches were provided, including the root-mean-square error(RMSE), the difference maps, and the image histogram cosine similarity. The average RMSE values of the conventional method and CFPM compared with the ground truth were 5.3% and 5.7%, respectively. Therefore, the reconstruction time is significantly reduced by 2/3 with the sacrifice of precision of only 0.4%. The CFPM method is also compatible with advanced fast FPM approaches to further reduce computation time.     

Zn1-xTMxO (TM=Al,Ga, In)导电性能的模拟计算

基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 构建了未掺杂与相同掺杂浓度的Zn_1-xTM_xO (TM=Al, Ga, In) 超胞模型,分别对模型进行了几何结构优化、态密度分布和能带分布的计算. 结果表明, 分别高掺杂 (Al, Ga, In) 相同原子分数3.125 at%的条件下, In掺杂对ZnO导电性能最好的结果, 计算结果和实验结果相一致. 关键词： (Al,Ga,In) 高掺ZnO 导电性能 第一性原理     

厚非线性介质瞬态热光非线性效应的研究

瞬态热光非线性效应是指由脉冲宽度可以和非线性效应的建立时间相比拟的纳秒脉冲激光入射产生的热光非线性效应.用Zscan法测量了不同厚度、不同束腰半径碘的酒精溶液的瞬态热光非线性效应曲线.从声波的传播方程和光波的非线性传播方程出发,用数值计算方法模拟了这一非线性过程.并对实验结果和数值模拟结果进行了比较 关键词： 瞬态热光非线性效应 非线性光学 数值计算     

激光冲击强化“残余应力洞”的形成机制

利用ABAQUS有限元软件进行了单个圆形高斯光斑的激光冲击强化数值模拟,分析材料表面光斑中心区域形成的"残余应力洞"现象,并通过分析材料的动态力学响应特征揭示了"残余应力洞"的形成机制。结果表明:在冲击波加载时,光斑边界处会产生很强的剪切应力,形成向四周传播的表面稀疏波和向材料内部传播的剪切波。当稀疏波同时传播到光斑中心,发生相遇、汇聚,使材料产生急剧的上下位移过程,造成冲击波加载塑性变形后的二次塑性变形。二次塑性变形中形成了较大的剪切塑性应变,并降低了冲击波加载阶段产生的轴向和径向塑性应变,使残余压应力降低,从而形成"残余应力洞"。     

CuHg_2Ti型Ti_2Cr基合金的电子结构、能隙起源和磁性研究

利用第一性原理计算方法,研究了CuHg2Ti结构下Ti2CrK(K=Sb,Ge,Sn,Sb,Bi)系列合金的电子结构、能隙起源和磁性.研究发现:Ti2CrK(K=Si,Ge)合金是普通半导体材料;Ti2CrK(K=Si,Bi)合金是亚铁磁性半金属材料,其半金属性能隙受到Sb和Bi原子s态的直接影响;Ti2CrSn合金是完全补偿的亚铁磁性半导体.基于Ti2CrSn合金两个自旋方向上的能隙起源不同,通过Si和Ge替换掺杂同族Sn元素调制能隙的宽度,获得了完全补偿亚铁磁性自旋无能隙材料;通过Fe和Mn替换掺杂过渡族Cr元素获得了一系列半金属材料.Ti2Cr1-xFexSn和Ti2Cr1-xMnxSn合金都具有亚铁磁性.所研究的这些半金属性合金的分子磁矩Mtotal与总的价电子数Zt服从Mtotal=Zt-18规则.     

Heusler型X_2RuPb(X=Lu,Y)合金的反带结构和拓扑绝缘性

采用第一性原理的计算方法,在不同条件下对Heusler型X2RuPb(X=Lu,Y)体系的电子结构展开研究.计算结果表明,这些合金在适当晶格变形或掺杂条件下,能够具有真正的拓扑绝缘体特性.杂化作用和自旋-轨道耦合作用都对材料产生"反带"结构发挥作用.但是针对不同成分所构成的材料,它们各自所起作用的程度有所不同,二者可以相辅相成.利用替换掺杂和四角变形双重调控方式可以更理想地进行"反带"结构调控进而获得理想的拓扑绝缘体,这对于材料的实际制备具有重要意义.     

Quantile regression for linear models with autoregressive errors using EM algorithm

In this paper, we consider the quantile linear regression models with autoregressive errors. By incorporating the expectation–maximization algorithm into the considered model, the iterative weighted least square estimators for quantile regression parameters and autoregressive parameters are derived. Finally, the proposed procedure is illustrated by simulations and a real data example.