超深亚微米PMOSFET的自愈合效应

主要研究负栅压偏置不稳定性(negative bias temperature instability，NBTI)效应中的自愈合效应，研究了器件阈值电压随着恢复时间和应力时间的恢复规律.研究表明器件的退化可以恢复是由于NBTI应力后界面态被氢钝化. 关键词： 负偏置温度不稳定性效应 自愈合效应 应力时间 PMOSFET     

柱状ZnO阵列薄膜的生长及其发光特性

采用一种设备简单、原料低廉的新型方法，在镀有ZnO先驱薄膜的(0001)蓝宝石上利用水热 法制备出了柱状ZnO阵列薄膜.用扫描电镜(SEM)，X射线衍射(XRD)对样品的形貌和结构进行 了表征，结果显示ZnO薄膜为柱状阵列，基于蓝宝石衬底沿c轴择优生长，且(0004)摇摆曲线 半高宽度(FWHM)约为1.8°.此ZnO阵列薄膜具有很强的紫外发射光谱(PL). 关键词： 柱状ZnO阵列薄膜 水热法 (0001)蓝宝石 PL谱     

基于元胞自动机模型的上匝道合流处交替通行控制的研究

上海市高架道路的上匝道合流处率先实施了交替通行的控制策略.以Fukui和Ishibashi提出的FI元胞自动机交通流模型为基础，对实施该策略前后的上匝道合流处分别建立合理的交通流模型，并对交通流进行了数值模拟和分析.结果表明：当高架路主线和上匝道的来流车辆较多时，交替通行控制可以大大改善高架道路交通；当交通流稀疏时，实施控制前后交通流状况基本不发生变化. 关键词： 元胞自动机模型 上匝道合流处 交替通行控制 数值模拟     

Effects of Substrate Temperature and Nitrogen Pressure on Growth of AIN Films by Pulsed Laser Deposition

Highly oriented aluminium nitride （AIN） films are grown on p-Si （100） substrates by pulsed laser deposition, and their characteristics of structure and composition are studied by x-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. The results show that the deposited films exhibit good crystalline properties with a sharp x-ray diffraction peak at 2θ= 33.15 ° corresponding to AIN h （100） crystalline orientation. The influences of substrate temperature and ambient nitrogen （N2） pressure on the crystallinity of A1N films are remarkable. At room temperature, when the ambient N2 pressure arises from 5 × 10^-6 Pa to 5 Pa, the crystallinity of the film becomes better. When the substrate temperature is 600℃, the film has the best crystallinity at 0.05 Pa. Furthermore, the effects of substrate temperature and ambient N2 pressure on the combination of A1-N bonds and surface morphology of AIN films are also studied.     

Chemical composition and magnetism of Ag doped LaMnO3

By using a sol-gel clue, a set of polycrystalline perovskite samples La1-xAgxMnO3 with a nominal doping level x ranging from 0.05 to 0.45 has been synthesized. The chemical composition and the magnetism of the samples were investigated. A little Ag was： found seeping from the samples in the sintering process when the doping level exceeded 0.05 and the sintering temperature was higher than 700℃ resulting in the samples being in multiphase. The magnetic transition points of the samples have been found to decrease with increasing sintering temperature. A concentration-dependent Tc similar to that of bivalent metal ion doped perovskite, has been obtained. We believe that the Ag seeping in the sintering process is responsible for those magnetic characteristics.     

On the susceptibility of organic peroxy bonds to hydride reduction

Reduction of organic molecules that contain a peroxy bond is broadly considered as a "risky" and uncertain operation when cleavage of the peroxy linkage is not desired. For this reason, such reduction steps are normally avoided at the planning stage of the synthesis when possible. As a natural consequence, the information in the literature about the susceptibility of organic peroxy bonds to reducing species is scant. In this work the tolerance of organic peroxy bonds to some common hydride reductants was examined systematically for the first time. Using reduction of ester group to alcohol as a probe, LiAlH(4), LiAlH(O(t)()Bu)(3), LiBHEt(3), and LiBH(4) were found to be significantly better than other reductants examined when taking into consideration both the completeness of the reduction of ester groups and the peroxy bond survival rate. LiBH(4) appeared to be the most suitable reductant for the reduction under discussion, not only because of the high reduction yields/excellent compatibility with peroxy bonds, but also because of the advantages in practical aspects. The results disclosed herein may (hopefully) provide a handy reference for dealing with reduction of other peroxy bond-containing molecules in the future.     

On Coupled KdV Equations with Self-consistent Sources

The coupled Korteweg-de Vries （CKdV） equation with self-consistent sources （CKdVESCS） and its Lax representation are derived. We present a generalized binary Darboux transformation （GBDT） with an arbitrary time- dependent function for the CKdVESCS as well as the formula for the N-times repeated GBDT. This GBDT provides non-auto-Biicklund transformation between two CKdVESCSs with different degrees of sources and enables us to construct more generM solutions with N arbitrary t-dependent functions. We obtain positon, negaton, complexiton, and negaton- positon solutions of the CKdVESCS.     

Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment

The two in-circuit test systems, one is a HP4156 semiconductor parameter automation system for measuring steady total dose effect, another one is a system for measuring pulsed total dose effect, under different environment with working principle and technical specification are introduced in detail in the paper. The comparison study of total dose damage effects irradiated by Pulsed hard X ray and long pulsed γ-ray generated in Qiangguang-Ⅰaccelerator, and by ⁶⁰Co steady γ-ray on typical CMOS devices utilizing the two test systems has been performed, which lays a foundation for the further research of total dose effect on CMOS devices in the future.     

(C_(70))_2-对叔丁基杯[8]芳烃化学修饰电极对卤代酸的电催化行为

(C_(70))_2-对叔丁基杯[8]芳烃化学修饰电极在V（乙腈）：V（水）＝2：3混 合溶剂中,发生两步还原／再氧化反应,分别对应于两电子和四电子转移。用扫描 电子显微镜和光电子能谱对修饰电极进行了表征。循环伏安实验表明,(C_(70)) _2-对叔丁基杯[8]芳烃的两步还原过程均匀卤代酸的还原具有电催化作用。     

对称三材料双栅应变硅金属氧化物半导体场效应晶体管二维解析模型

提出了对称三材料双栅应变硅金属氧化物半导体场效应晶体管器件结构,为该器件结构建立了全耗尽条件下的表面势模型、表面场强和阈值电压解析模型,并分析了应变对表面势、表面场强和阈值电压的影响,讨论了三栅长度比率对阈值电压和漏致势垒降低效应的影响,对该结构器件与单材料双栅结构器件的性能进行了对比研究.结果表明,该结构能进一步提高载流子的输运速率,更好地抑制漏致势垒降低效应.适当优化三材料栅的栅长比率,可以增强器件对短沟道效应和漏致势垒降低效应的抑制能力.