Fabrication and photoelectrocatalytic performance of C3N4-modified Ti/PbO2 anode with surface hydrophobicity

Journal of Solid State Electrochemistry - Reasonable hydrophobic anode is deemed to be a promising electrode for photoelectrocatalytic degradation of wastewater. In this study, the C3N4-modified...     

Stable and Low‐Cost Mesoscopic CH3NH3PbI2Br Perovskite Solar Cells by using a Thin Poly(3‐hexylthiophene) Layer as a Hole Transporter

Mesoscopic perovskite solar cells using stable CH₃NH₃PbI₂Br as a light absorber and low‐cost poly(3‐hexylthiophene) (P3HT) as hole‐transporting layer were fabricated, and a power conversion efficiency of 6.64 % was achieved. The partial substitution of iodine with bromine in the perovskite led to remarkably prolonged charge carrier lifetime. Meanwhile, the replacement of conventional thick spiro‐MeOTAD layer with a thin P3HT layer has significantly reduced the fabrication cost. The solar cells retained their photovoltaic performance well when they were exposed to air without any encapsulation, presenting a favorable stability. The combination of CH₃NH₃PbI₂Br and P3HT may render a practical and cost‐effective solid‐state photovoltaic system. The superior stability of CH₃NH₃PbI₂Br is also promising for other photoconversion applications.     

Carbon quantum dots decorated on ZnO nanoparticles: An efficient visible-light responsive antibacterial agents

Zinc oxide@carbon quantum dots (ZnO@CQDs) nanocomposite was prepared via a facile hydrothermal method. Characterization of the obtained samples was carried out by Scanning electron microscopy-EDX(SEM–EDX), Transmission electron microscopy (TEM), X-ray diffraction (XRD), Photoluminescence (PL), and Fourier transformed infrared spectroscopy (FT-IR). These results revealed that we have prepared ZnO@CQDs nanocomposite successfully. Our study revealed that the antibacterial efficiency (against S.aureus and E.coli) under visible light irradiation of as prepared ZnO@CQDs nanocomposite was higher than pure ZnO nanoparticles. The ZnO@CQDs nanocomposite showed excellent antibacterial activity against Gram-negative and Gram-positive bacteria with a minimal inhibitory concentration (6–8 mg/mL) against to E.coli and S.aureus. We also tested the light response of ZnO@CQDs under UV–vis light, by calculating its band gap data, after decorated with CQDs, the band gap of the pure ZnO can significantly decreased from 2.57 eV to 2.50 eV. The ZnO decorated by CQDs can both enhance the light absorption and suppress photogenerated electron–hole's recombination which results in the enhancement of antibacterial properties.     

Fabrication of Ti/black TiO2-PbO2 micro/nanostructures with tunable hydrophobic/hydrophilic characteristics and their photoelectrocatalytic performance

Journal of Solid State Electrochemistry - Herein, a novel Ti/black TiO2-PbO2 micro/nanostructured photoanode with tunable hydrophobic/hydrophilic characteristics was fabricated via the facile...     

高性能LiFePO4/碳纳米笼锂离子电池正极材料

以具有高比表面积、分级孔结构和优良导电性的碳纳米笼（CNCs）为载体,制得了粒子尺寸为10～25 nm且高度分散的LiFePO₄/CNCs复合物.以LiFePO₄/CNCs复合物作为锂离子电池的正极材料,在0.1 C倍率下首次放电比容量达到163 mAh·g^-1,15 C和30 C倍率下的放电比容量可达96和75 mAh·g^-1;在15 C倍率下循环200圈后,其放电比容量仍保持在92 mAh·g^-1,显著优于LiFePO₄/CNTs复合物.这些结果表明,LiFePO₄/CNCs复合物具有优异的倍率性能和循环稳定性,是一种性能优良的锂离子电池正极材料,其性能源自CNCs载体的高比表面积、分级孔结构和优异导电性以及LiFePO₄颗粒的纳米化和高结晶度.     

石墨烯射频器件研究进展

石墨烯因具有优良的电学特性,在半导体行业中受到广泛关注,特别因其具有超薄的结构和极高的载流子迁移率,为解决短沟道效应提供了可能,并且在高速电子领域具有应用前景.近年来,使用石墨烯作为沟道材料制备射频晶体管及射频电路是发挥石墨烯材料优势的一个重要研究方向.制造高性能的射频器件,首先要制备出高性能的石墨烯材料.在金属衬底上沉积均匀的单层石墨烯材料或者在绝缘衬底上外延生长单层、双层石墨烯材料都是获得高质量石墨烯材料的常用方法.器件结构及工艺流程的设计也是提升晶体管射频性能的重要因素,多指栅结构、T型栅结构、埋栅结构以及自对准工艺的发展能够有效改善石墨烯射频晶体管的截止频率及最大振荡频率.石墨烯晶体管独特的电学特性使得其除了可以构造与其他半导体材料电路相似的射频电路结构,还可以构造出功能完整并且结构更加简单的新型射频电路结构.     

Interferometry measurement of LG beam propagation parameters in near field北大核心CSCD

Laguerre-Gaussian (LG) vortex beam has orbital angular momentum (OAM). Recurrence propagation formulae of LG beam through optical system with aperture is analyzed in near field. Phase difference change of LG beam with different orders passing double slit is calculated. Forked diffraction grating on computer is employed to diffract fundamental-mode Gaussian beam, which gives rise to LG vortex beam with different orders. LG beam spot through aperture system and double slit interference pattern are captured via CCD camera. Experimental measurement of LG beam propagation characteristics is conducted in near field. Fork diffraction grating 4 mm×5 mm are displayed on SLM at 1 m distance laser, grating density is about 16 lines/mm. LG hollow beam is generated when size of LG dark spot is between 0.5 mm and 0.9 mm, and width of radius ratio is 0.2. Double slit width is 0.2 mm while double seam spacing is 0.5 mm, in this way clear interference fringes are obtained. Results can be used in optical communication information encoded optical vortex orbital angular momentum. © 2017, Editorial Board, Journal of Applied Optics. All right reserved.     

Ni_2P/TiO_2-Al_2O_3催化剂的制备及其加氢脱硫、脱氮性能

采用溶胶-凝胶法制备了TiO2-Al2O3复合载体,采用浸渍法制备了Ni2P/TiO2-Al2O3催化剂,并用X射线衍射(XRD)、N2吸附比表面积(BET)测定、热重-差热分析(TG-DTA)、X射线光电子能谱(XPS)等技术对催化剂的结构和性质进行了表征.催化剂加氢脱硫(HDS)和脱氮(HDN)活性评价在实验室固定床连续反应装置上,以噻吩和吡啶为模型反应物进行.考察了不同载体、Ni2P负载量、标称Ni/P摩尔比、催化剂焙烧温度对Ni2P/TiO2-Al2O3催化剂上同时进行的噻吩加氢脱硫和吡啶加氢脱氮性能的影响.结果表明,TiO2含量为80%(w)的TiO2-Al2O3复合氧化物为载体,Ni2P负载量为30.0%(w),标称Ni/P摩尔比为1/2,催化剂焙烧温度为500℃时,Ni2P/TiO2-Al2O3催化剂加氢脱硫脱氮活性最高.在360℃,3.0MPa,氢油比800(V/V),液时体积空速1.5h-1的条件下,噻吩HDS和吡啶HDN转化率分别为61.32%和64.43%.     

Resistive switching behavior and mechanism of room-temperature-fabricated flexible Al/TiS2-PVP/ITO/PET memory devices

The mixture of two-dimensional (2D) TiS₂ nanoflakes and polyvinylpyrrolidone (PVP) exhibits a nonvolatile, bipolar resistive switching behavior with a low resistance state (LRS)/high resistance state (HRS) current ratio of ～10² in the devices with a flexible Al/TiS₂-PVP/indium tin oxide (ITO)/polyethylene terephthalate (PET) structure. The polymer-assistant liquid-phase exfoliation of 2D nanoflakes from TiS₂ bulk material is processed in low-boiling solvent. And the fabrication process of these devices is performed entirely at room temperature. Such an energy-saving and scalable production process indicates a huge potential of large-scale industrial application. The AFM and TEM characterizations showed that the exfoliated 2D TiS₂ are flakes at micrometer scale with a layer-number of mostly 7 or 8. Both the HRS and the LRS can be kept for more than 10⁴ s. The endurance of devices was obtained over 100 direct current (DC) sweeping cycles with remarkable separations between different resistive states. The distributions of writing (set) and erasing (reset) voltages show that set and reset voltages are small (<2 V). Also, the resistive switching characteristics of the devices are stable during 1000 bending cycles. The switching behavior is explained by the thinning and recovery of Schottky barriers within devices.