Photo-detachment cross section of H- near two parallel interfaces

The photo-detachment cross section of H^- near two parallel elastic interfaces is derived and calculated by using the closed orbit theory. The photo-detachment cross section of H^- near two interfaces is shown to exhibit multi-periodic oscillations when the distance between the H^- and the interface is varied. Each peak in the Fourier transformed photo-detachment cross section corresponds to the length of a closed orbit, which is quite similar to the case of atomic spontaneous emissions in a dielectric slab. This study provides a new understanding of the photo=detachment process of H^- in the presence of interfaces.     

基于振幅调制的超冷铯原子高分辨光缔合光谱的实验研究

基于振幅调制的超冷铯原子高分辨光谱的实验研究，用相对于铯分子6S_1/2+6P_3/2离解限红失谐的光缔合激光作用于磁光阱中超冷铯原子，观察到通过光缔合产生的激发态超冷分子.在实验中，为了得到高信号-噪声比的光缔合光谱，利用声光调制器对俘获光进行振幅调制，将探测到的超冷铯原子的荧光信号利用lock-in技术解调.同时利用密度矩阵方程系统地分析了实验结果.     

湍流大气中光波闪烁的圆环孔径平均因子

利用弱起伏条件下球面波在大气湍流中传输的光强起伏(闪烁)理论和圆环孔径滤波函数,获得了圆环孔径平均因子的精确表达式。将圆环孔径平均因子关于一个无量纲参量(孔径半径与菲涅耳尺度的比值)拟合成2阶多项式,再找出多项式系数与孔径内外径之比的函数关系,获得了圆环孔径平均因子关于该参量和孔径内外径之比的函数关系式。通过误差分析确定了拟合关系式的适用范围,在此范围内,拟合式与精确式的相对误差小于25%。分别用Tatarskii谱和修正Hill谱分析了湍流内尺度对圆环孔径平均因子的影响,结果显示:在其他条件不变的情况下,内尺度越大,孔径平均效应相对越小。     

Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Strong photoluminescence (PL) covering the green-violet band was measured at room temperature in an as-deposited amorphous Si-in-SiN_x film, which was prepared by plasma-enhanced chemical vapor deposition on cold (below 60 °C) Si(1 0 0) wafer. With an increase in photon energy of excitation, the PL shifts its peak position from 510 to 416 nm at yet-comparable intensities, thus allowing an energy-selected excitation in practical application. Also, a time-resolved analysis was performed for the emissions at various wavelengths, which showed a decay time shorter than 1.0 ns. These results indicate that the nanostructured Si-in-SiN_x can be a promising candidate material for the fabrication of silicon-based optical interconnections and switches.     

含有AlGaAs插入层的InAs/GaAs三色量子点红外探测器

本文报道了采用分子束外延技术制备的三色InAs/GaAs量子点红外探测器. 器件采用nin型结构, 吸收区结构是在InGaAs量子阱中生长含有AlGaAs插入层的InAs量子点, 器件在77 K下的红外光电流谱有三个峰值: 6.3, 10.2和11 μm. 文中分析了它们的跃迁机制, 并且分别进行了指认. 因为有源区采用了不对称结构, 所以器件在外加偏压正负方向不同时, 光电流谱峰值的强度存在一些差异. 不论在正偏压或者负偏压下, 当偏压达到较高值, 再进一步增大偏压时, 都出现了对应于连续态的跃迁峰强度明显下降的现象, 这是由量子点基态与阱外连续态的波函数交叠随着偏压进一步增大而迅速减小导致的.     

基于RBR和PCA的2.4米风洞故障诊断系统应用研究

为解决2.4米风洞试验装备的故障监测与诊断（FDD）问题,设计了一种基于规则推理（RBR）和主元分析（PCA）的并行故障诊断系统。对试验流程和因果关系较强的单一装备故障,采用RBR诊断方法;而对控制过程和重要传感器的故障,通过构建PCA模型,根据平方预报误差（SPE）实现系统故障的诊断。运行效果表明：该系统实时性好、诊断结果与实际相符合、且对过程故障具有较强的针对性。     

The second hyperpolarizability of CdTe nanocrystals using polarization-resolved degenerate four-wave mixing

Polarization-resolved forward degenerate four-wave mixing (DFWM) in a nonresonant region revealed the effective third-order nonlinear susceptibility of colloidal CdTe nanocrystals (NCs) with the size near the Bohr radius and various concentrations. The second hyperpolarizabilities, and , of the CdTe NCs were ∼1.15 × 10⁻⁴¹ m⁵/V² and ∼3.01 × 10⁻⁴² m⁵/V² from the measurement of the concentration-dependent third-order nonlinear susceptibility of CdTe NCs, respectively. The ratio (/) of the hyperpolarizabilities was ∼0.26, which indicated a large contribution of an electronic polarization process to the third-order nonlinearity of CdTe NCs.