Edgeworth Expansion of Densities of Order Statistics with Fixed Rank

We give an Edgeworth expansion for densities of order statistics with fixed rank k.The Edgeworth expansion for densities of extreme values is then obtained as a special case k=1.     

带非局部源的退化半线性抛物型方程解的爆破

该文研究带Dirichlet边界条件的退化半线性抛物型方程:xqut-uxx=∫0af(u)dx,这里q>0.作者证明了局部解的存在唯一性并且得到当初值充分大时解在有限时刻爆破.进而,证明解的爆破点集是整个区间[0,a],这与具有局部源的方程解的性质不同.     

多小波子空间上的单小波表示

本文在较弱的条件下,建立了2重多小波子空间与单小波子空间的关系.即由2重多小波构造出单小波.一方面,这种单小波的平移伸缩与2重多小波的平移伸缩生成的子空间是完全相同的;另一方面,它具有插值性.因此通过构造出的单小波建立了多小波子空间上的Shannon型采样定理.     

两指标点过程的停止及σ-域

本文给出两指标点过程的跳线刻划、停止方法,论述了跳线的可测性及点过程有关的σ-域的结构和特征。     

一类积分不等式的推广

对一些基本的积分不等式进行了推广，给出了含有n个无关变元的更广泛的非线性积分不等式．利用所得的不等式讨论了某些非线性积分方程解的有界性．     

溃坝问题的间断有限元方法

本文研究90年代初提出的Runge-Kutta间断Galerkin有限元方法，给出该方法的精度分析，通过经典算例验证该方法处理间断问题、捕捉锐利波形的能力，并将其推广到求解浅水问题．针对坝底无摩擦，无坡度的理想情形进行讨论，给出方溃坝和圆溃坝问题的数值模拟结果．     

The tame kernel of imaginary quadratic fields with class number 2 or 3

This paper presents improved bounds for the norms of exceptional finite places of the group , where is an imaginary quadratic field of class number 2 or 3. As an application we show that .

     

D-N交替法与Schwartz交替法的收敛关系分析

This paper has demonstrated that the Schwartz alternating process must converge if D-N alternating process has converged. Its technique is that the overlapping regions in Schwartz alternating process are considered as independent domains, then Schwartz alternating process could be transformed into D-N alter-nating process. Finally the convergence estimation of Schwartz alternating process could be obtained. The results show that its convergence rate is same as that of D-N alternating process.     

Photoluminescence and persistent photoconductivity of Al<Subscript>x</Subscript>Ga<Subscript>1-x</Subscript>N/GaN heterostructures

We have investigated the optical properties of Al_xGa_1-xN/GaN heterostructures (x=0.08, 0.15, 0.33) grown by metal organic chemical vapor deposition on sapphire using photoluminescence (PL) and persistent photoconductivity (PPC) measurements. For the Al_xGa_1-xN/GaN heterostructures (HS) containing high Al composition, we observed an anomalous temperature-dependent photoluminescence and persistent photoconductivity effects. These results show a strong dependence of the physical properties of Al_xGa_1-xN/GaN HS on the Al content and layer thickness. The anomalous temperature-dependent PL is usually attributed to the presence of carrier localization states. These phenomena are explained based on the alloy compositional fluctuations in the Al_xGa_1-xN/GaN HS. From the PPC measurements, the photocurrent (PC) quenching was observed for Al_xGa_1-xN/GaN HS and it is explained by the metastable states formed in the underlying GaN layer. Also, the mechanisms behind the PC quenching and PPC phenomena are explained in detail. PACS 72.20.Jv; 72.40.+w; 78.55.Cr