Effect of a low magnetic field on crystallinity and magnetic susceptibility of molecular magnet {NBu4[FeCr(ox)3]}x (NBu4=tetra( n-butyl) ammonium ion; ox=oxalate ion)

Molecular magnet {NBu₄[Fe Cr(ox)₃]}_x (NBu₄⁺=tetra(n-buty1) ammonium ion; ox²⁻=oxalate ion) was synthesized under an applied low magnetic field of 0.3 T in comparison to that synthesized without a field. Their crystallinities, morphologies and magnetic properties were characterized by using the X-ray diffractionmeter, the transmission electron microscope, and a superconducting quantum interference device. It is found that the average size of particles synthesized under the applied field appears larger than that synthesized without a field. Moreover, its crystallinity, morphology and magnetic susceptibility have also been improved. However, its chemical structure and ferromagnetic phase transition temperature T_c do not change. Possible reasons to explain this effect are also discussed.     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

A pair of orthogonal frames

We start with a characterization of a pair of frames to be orthogonal in a shift-invariant space and then give a simple construction of a pair of orthogonal shift-invariant frames. This is applied to obtain a construction of a pair of Gabor orthogonal frames as an example. This is also developed further to obtain constructions of a pair of orthogonal wavelet frames.     

Bioisosterism between Sulfonyl Group and Phosphoryl Group-The Synthesis of New ALS Inhibitors N-(Arylamino Hydroxyl Phosphoryl)-N'-(4,6-Dimethoxypyrimidine-2-yl)ureas

Sulfonylureaherbicidesisanewclassofherbicidesdiscoveredinthemid-l97O's',whosemodeofactionhasbeenestablishedastheinhibitionofacetolactatesynthase(ALS,alsoreferredasacetohydroxyacidsynthase)'-Muchattentionhasbeenfocussedonthiskindofcompound,sincetheyhaveunprecedenteduserates,ahighdegreeofselectivity,andexcellentenvironmentalsafety'.NumerousmodificationsofthestrUctureofthisclassofherbicideshavebeenreported'.Wehavetakenattentiontothesimi1alltybetweenthesulfonylgroup(-SO2-)andphosphoryIgroup[-P…     

钢卷尺刻度在线测量系

本文介绍了一种钢卷尺刻度在线测量系统 ,它采用了高速摄像及计算机数据处理技术 ,文章阐述了系统的非接触动态测量原理 ,描述了光电信号的处理方法 .     

激发态卟啉衍生物研究(Ⅶ)——取代基对卟啉—硝基苯化合物发光特性的影响

本文报导共价链相连的X-P-Y“三合板”型化合物在二甲基甲酰胺(DMF)和苯溶液中的发光特性.结果发现:引入取代基X=Cl—,CH3O—和Y=苯、硝基苯对中心卟啉的吸收和荧光光谱均无明显影响,仅其峰值频率将因溶剂不同而有所偏移.此外,由Cl—取代的卟啉—苯的荧光强度总比CH3O—取代时高;若将Y取代基由苯改换为硝基苯时,将使CH3O—P—Y化合物的荧光增强,但在Cl—P—Y化合物中则出现相反的趋势.不论在何种化合物中,在Y取代基中的苯环上引入NO2—基后,均可使其消光系数减小,而且当硝基在邻位取代时,这一效应更为显著.所有这些变化规律均不因溶剂不同而异.如果我们认为X—P—Y化合物的发光强度变化和其中心的卟啉大环上的π电子云密度偏移有规律性的关联,那么上述的一些取代基效应是可以理解的.进而,我们认为:本文所报导的事实将有助于充实巧妙设计高效利用太阳能的分子体系的科学依据.     

退火处理对SnO2薄膜光致发光性质的影响

实验研究表明,SnO2薄膜经过退火处理后其光致发光谱有明显的变化。在氧和氮两种不同气氛中进行热处理,其变化也有差异。这种变化主要是由于SnO2膜中氧空位和自由载流于浓度变化所致。