石墨和纳米碳中缺陷和电子密度随温度的变化

测量了石墨和纳米碳在不同温度下的正电子寿命谱,研究了石墨和纳米碳中缺陷和电子密度随温度的变化.结果表明,纳米碳中缺陷的开空间和缺陷浓度分别大于和高于石墨晶体;纳米碳的平均自由电子密度低于石墨晶体.当温度从25K升至295K时,石墨和纳米碳中的平均自由电子密度随温度的升高而下降:石墨晶体中的自由电子密度随温度的升高变化较小;纳米碳的自由电子密度随温度的升高变化较大.随着温度的升高,石墨和纳米碳中的热空位数量增多,而且这些空位可迁移至微孔洞的内表面使微孔洞的开空间增大.     

In-beam spectroscopy of 253, 254No

In-beam conversion electron spectroscopy experiments have been performed on the transfermium nuclei ^{253, 254}No using the conversion electron spectrometer SACRED in nearly collinear geometry in conjunction with the gas-filled separator RITU at the University of Jyv?skyl?. The experimental setup is discussed and the spectra are compared to Monte Carlo simulations. The implications for the ground-state configuration of ²⁵³No are discussed. Received: 21 March 2002 / Accepted: 16 May 2002 / Published online: 31 October 2002 RID="a" ID="a"e-mail: rdh@ns.ph.liv.ac.uk RID="b" ID="b"Present address: GANIL, F-14021 Caen, France. RID="c" ID="c"Permanent address: IReS Strasbourg, IN2P3-CNRS, F-67037-Strasbourg, France. RID="d" ID="d"Present address: CEA/DIF DCRE/SDE/LDN F-91680 Bruyeres-le-Chatel. RID="e" ID="e"Present address: Daresbury Laboratory, Daresbury WA4 4AD, UK. RID="f" ID="f"Permanent address: IPN Lyon, IN2P3-CNRS, F-69037 Lyon, France.     

Modal decomposition method for modeling the interaction of Lamb waves with cracks

The interaction of the low-order antisymmetric (a0) and symmetric (s0) Lamb waves with vertical cracks in aluminum plates is studied. Two types of slots are considered: (a) internal crack symmetrical with respect to the middle plane of the plate and (b) opening crack. The modal decomposition method is used to predict the reflection and transmission coefficients and also the through-thickness displacement fields on both sides of slots of various heights. The model assumes strip plates and cracks, thus considering two-dimensional plane strain conditions. However, mode conversion (a0 into s0 and vice versa) that occurs for single opening cracks is considered. The energy balance is always calculated from the reflection and transmission coefficients, in order to check the validity of the results. These coefficients together with the through-thickness displacement fields are also compared to those predicted using a finite element code widely used in the past for modeling Lamb mode diffraction problems. Experiments are also made for measuring the reflection and transmission coefficients for incident a0 or s0 lamb modes on opening cracks, and compared to the numerical predictions.     

A high-pressure Raman and X-ray diffraction study of the perovskite SrCeO3

A high-pressure structural study of SrCeO₃ has been performed at room temperature by Raman spectroscopy and X-ray diffraction up to 32 and 45 GPa, respectively. A first-order reversible phase transition is observed at about 12 GPa in both techniques. A second weak structural change, taking place between 18 and 25 GPa, can be suspected from Raman data. The increase in the number of Raman bands and diffraction lines is an indication that the symmetry is lowered and the compound does not evolve towards the ideal cubic perovskite structure. A Rietveld analysis of X-ray data was performed for the low-pressure phase and the atomic positions and the cell lattice parameters variations are reported in this paper. The volume compressibility derived from Raman modes (5.6×10⁻¹² Pa⁻¹), involving mainly bond-stretching for each type of polyhedron, is found to be close to the one obtained from volume cell variations measured by X-ray diffraction (7.9×10⁻¹² Pa⁻¹).     

μSR studies of heavy fermion systems

We have performed both zero field and high transverse field measurements at dilution refrigerator temperatures on a number of heavy electron systems, examining the superconducting and magnetic properties of these interesting materials. Among the materials studied to date are UBe₁₃, URu₂Si₂ and U₆Fe. The magnetic field penetration depth in the superconducting state of UBe₁₃ is greater than 10000 Å, as no increase in the transverse field relaxation rate is observed belowT _c . A sharp increase in the precession frequency is seen, starting atT _c . This frequency shift shows little temperature dependence at low temperature; we found no clear evidence for unconventional superconductivity in this material. Zero field measurements in URu₂Si₂ show the weak antiferromagnetic transition at 17.5 K. Finally, we we found no clear evidence for unconventional superconductivity in this material. Zero field measurements in URu₂Si₂ show the weak antiferromagnetic transition at 17.5 K. Finally, we have observed relaxation in high transverse field due to the formation of a flux lattice in U₆Fe, a material where the electron effective mass is rather lighter than in other heavy fermion systems. The relaxation exhibits a sharp onset atT _c=3.9 K, and is flat at low temperatures as expected for a conventional superconductor.     

Magnetism in electron-doped copper oxides

We report muon spin relaxation/rotation measurements on sintered powder samples of Nd_2−x Ce _x CuO_4−y and a large single crystal of Nd₂CuO_4−y . We find an electronic phase diagram which is quite similar to that of hole-doped superconductors such as La_2−x Sr _x CuO_4−y , although the doping of electrons into the system is less efficient in destroying the static moments on the copper spins. Static magnetic order in Nd₂CuO_4−y appears below about 250 K, and two spin reorientations are seen atT=75 K andT=35 K. Measurements of the magnetic field penetration depth have been unsuccessful due to the rare-earth paramagnetism of these materials.     

Wafer and epilayer improvement for integrated optics devices on InP: the ESPRIT project 2518

Ga _x In_1–x As _y P_1–y alloys lattice matched to InP substrates are currently used to fabricate optoelectronic and integrated optics devices. To achieve devices with high performances and high fabrication yield, the uniformity and reproducibility of the Ga _x In_1–x As _y P_1–y epitaxial layers (composition, thickness, doping, etc.) have become key parameters. These problems have been addressed in the frame of ESPRIT project 2518 and are presented in this paper. Several aspects have been considered starting from the optimization of InP substrates, the MOVPE growth of uniform GalnAsP layers, the material characterization to the validation of material uniformity on passive optical waveguides. Both scanning photoluminescence analysis and waveguide losses measurements performed on 2 inch wafers with a high lateral resolution have shown that high quality uniform GalnAsP layers can be obtained reproducibly on 2 InP substrates using a commercially available LP-MOCVD growth process. In particular, more than 60% of 36 mm long, 3m wide and 100m spaced rib waveguides exhibit losses below 0.8dBcm^–1.     

Parameter variation in low-quartz between 94 and 298K

The structure of low quartz has been refined at 94, 115, 150, 190, 240 and 298K using Mo Kα intensities up to 2θ = 90° with residuals around 1.25%. The major structural change from 94 to 298K is an increase of the SiOSi angle from 142.69(4) to 143.65(5) corresponding to a rotation by ～0.8° of a rigid SiO₄ tetrahedron around the crystallographic 2-axis through its central Si. The orientations of the principal axes of vibration of Si and O do not change significantly with temperature. The temperature dependence of the mean-square displacement of O along its principal axes follows the Debye formula of thermal motion quite well, while for Si the experimental slopes are significantly less than their calculated values.     

Proprietes magnetiques et electriques de la phase Ca2MnO4−xFx

The magnetic properties of the antiferromagnetic Ca₂MnO_4?x solid solution (0?x?0,30) are essentially characterized by a weak ferromagnetism with a maximum value for x = 0,20. Spin canting results from the competition between the antiferromagnetic super-exchange couplings and the double exchange ferromagnetic interactions due to the presence of manganese in oxidation states + III and + IV. It seems independent of the site of fluorine in the framework. The variation of Weiss constant and ordering temperature withx is also discussed. Electrical conductivity results from a hopping mechanism between Mn³⁺ and Mn⁴⁺ ions. The electrical conductivity presents a maximum when x = 0.10, corresponding to an activation energy minimum.     

An extended transfer matrix-finite element method for free vibration of plates

A combination of extended transfer matrix and finite element methods is proposed for obtaining vibration frequencies of structures. This method yields the value of the frequency once a trial value is assumed. By using this technique, the number of nodes required in the regular finite element method is reduced and therefore a smaller computer can be used. Besides, no plotting of the values of the determinants corresponding to each assumed frequency is necessary. A worked example is given for the case of vibration of a cantilever plate. The results show fast convergence from the assumed value to the true natural frequency.