Fermion superfluids of nonzero orbital angular momentum near resonance

We study the pairing of Fermi gases near the scattering resonance of the l not equal 0 partial wave. Using a model potential which reproduces the actual two-body low energy scattering amplitude, we have obtained an analytic solution of the gap equation. We show that the ground state of l=1 and l=3 superfluids are orbital ferromagnets with pairing wave functions Y11 and Y32, respectively. For l=2, there is a degeneracy between Y22 and a "cyclic state." Dipole energy will orient the angular momentum axis. The gap function can be determined by the angular dependence of the momentum distribution of the fermions.     

Dispersion-based short-time Fourier transform applied to dispersive wave analysis

Although time-frequency analysis is effective for characterizing dispersive wave signals, the time-frequency tilings of most conventional analysis methods do not take into account dispersion phenomena. An adaptive time-frequency analysis method is introduced whose time-frequency tiling is determined with respect to the wave dispersion characteristics. In the dispersion-based time-frequency tiling, each time-frequency atom is adaptively rotated in the time-frequency plane, depending on the local wave dispersion. Although this idea can be useful in various problems, its application to the analysis of dispersive wave signals has not been made. In this work, the adaptive time-frequency method was applied to the analysis of dispersive elastic waves measured in waveguide experiments and a theoretical investigation on its time-frequency resolution was presented. The time-frequency resolution of the proposed transform was then compared with that of the standard short-time Fourier transform to show its effectiveness in dealing with dispersive wave signals. In addition, to facilitate the adaptive time-frequency analysis of experimentally measured signals whose dispersion relations are not known, an iterative scheme for determining the relationships was developed. The validity of the present approach in dealing with dispersive waves was verified experimentally.     

Positive domain wall resistance of 180 degrees Néel walls in Co thin films

We measured the intrinsic domain wall resistance (DWR) of 180 degrees Ne el walls in a polycrystalline Co thin film deposited on top of a patterned antiferromagnetic CoO template. After field cooling through the CoO blocking temperature, exchange bias induces a spatially modulated coercivity of the Co film, resulting in a periodic domain pattern with 180 degrees Ne el walls. The intrinsic DWR is determined unambiguously by using rotating magnetic fields that result in a reversible creation and annihilation of the Ne el walls. In contrast with earlier reports, the DWR is positive and in agreement with models based on the giant magnetoresistance mechanism. A reliable, quantitative determination of the DWR requires careful numerical evaluation of the anisotropic magnetoresistance effect.     

Compensation for pixel-mismatch errors in shift-multiplexed holographic data storage

To read out correct data from shift-multiplexed holographic data storage, we propose a novel method of pixel matching by use of a tiny plane-parallel refraction plate placed in the path of converging readout beams. Tilting the refraction plate produces a shift in the lateral position of the readout beam incident upon the holographic storage disk, leading to compensation for pixel-mismatch errors by an improvement in bit-error rate of 3 orders of magnitude.     

Superhigh numerical aperture (NA > 1.5) micro gradient-index lens based on a dual-material approach

We describe a novel scheme for obtaining a superhigh numerical aperture gradient-index (SHNA GRIN) lens from multiple thin layers of two or more materials with large refractive-index contrast. Design procedures for the lens are described, including variation of the layer thickness to achieve focusing and of the thickness limit to reduce scattering loss. We use an exact numerical solution by the finite-difference time-domain method to evaluate the lens's performance. Specific examples of a SHNA GRIN lens with a SiO2-TiO2 material system designed for fiber coupling to a nanowaveguide are shown to have focusing FWHM spot sizes of 0.53-0.7 microm at lambda =1.55 microm (corresponding to a NA of approximately 1.6-1.1) with 2.7-2.4% more loss than an ideal continuous index profile GRIN lens. With this approach, a SHNA GRIN lens with a NA of > 1.5 and a length of <20 microm can be achieved with currently available thin-film deposition techniques.     

Temperature-dependent infrared absorption cross sections of methyl cyanide (acetonitrile)

Pressure broadened (1 atm. N₂) absorption cross sections and integrated band intensities have been derived from laboratory spectra of CH₃CN, recorded at 276, 298, and 323 K, covering 600-. The spectra were recorded at a resolution of using a commercial Fourier transform spectrometer and a custom flowing sample delivery system. We report integrated absorption cross sections for intervals corresponding to the most prominent bands, compare the results with previously reported values, and discuss error sources, which are estimated as ∼7% with systematic error the largest error source.     

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of . The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.     

Theory and ab initio calculation of radiative lifetime of excitons in semiconducting carbon nanotubes

We present a theoretical analysis and first-principles calculation of the radiative lifetime of excitons in semiconducting carbon nanotubes. An intrinsic lifetime of the order of 10 ps is computed for the lowest optically active bright excitons. The intrinsic lifetime is, however, a rapid increasing function of the exciton momentum. Moreover, the electronic structure of the nanotubes dictates the existence of dark excitons near in energy to each bright exciton. Both effects strongly influence measured lifetime. Assuming a thermal occupation of bright and dark exciton bands, we find an effective lifetime of the order of 10 ns at room temperature, in good accord with recent experiments.     

Two-component Fermi gas on internal-state-dependent optical lattices

We study the phase diagram of a one-dimensional, two-component (i.e., pseudo-"spin"-(1/2)) ultracold atomic Fermi gas. The two atom species can have different hopping or mass. A very rich phase diagram for equal densities of the species is found, containing Mott insulators and superfluids. We also discuss coupling such 1D systems and the experimental signatures of the phases. In particular, we compute the spin-structure factor at small momentum, which should reveal a spin gap.     

Self-trapped excitons in silicon dioxide: mechanism and properties

Irradiating silica produces self-trapped excitons (STEs) that spontaneously create atomic-scale distortions on which they localize themselves. Despite enduring interest in STEs and subsequent defects in this key technological material, the trapping mechanism and geometry remain a mystery. Our ab initio study of STEs in alpha-quartz using a many-electron Green's function approach answers both questions. The STE comprises a broken O-Si bond with the hole localized on the defected oxygen and the electron on the defected silicon atom in a planar sp2 conformation. The results further explain quantitatively the measured STE spectra.