Influence of polymer dielectric surface energy on thin‐film transistor performance of solution‐processed triethylsilylethynyl anthradithiophene (TES‐ADT)

This study investigates the correlation between surface energy of polymer dielectrics and the film morphology, microstructure, and thin‐film transistor performance of solution‐processed 5,11‐bis(triethylsilylethynyl) anthradithiophene (TES‐ADT) films. The low surface energy polyimide (PI) dielectric induced large grains with strong X‐ray reflections for spin‐cast TES‐ADT films in comparison to high surface en‐ ergy poly(4‐vinyl phenol) (PVP) dielectric. Furthermore, thin‐film transistors based on spin‐cast TES‐ADT films on PI dielectric exhibited enhanced electrical performance, small hysteresis, and high stability under bias stress with carrier mobility as high as 0.43 cm²/Vs and a current on/off ratio of 10⁷. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ab initio simulation of the BaZrO3 (0 0 1) surface structure

Electronic and atomic structures of different terminations of the (0 0 1) non-polar orientation of BaZrO₃ surfaces have been studied using first-principles calculations. We found that surface energies at both possible surface terminations, BaO and ZrO₂, were very close. The (0 0 1)-BaO and (0 0 1)-ZrO₂ terminated surfaces have bandgap values smaller than that of a bulk BaZrO₃ crystal. In addition, the relative surface stability has been analyzed as a function of chemical environment.     

Superfluid-insulator transition of strongly interacting fermi gases in optical lattices

We study a quantum phase transition between fermion superfluid (SF) and band insulator (BI) of fermions in optical lattices. The destruction of the band insulator is driven by the energy gain in promoting fermions from valance band to various conducting bands to form Cooper pairs. We show that the transition must take place in lattice height Vo/ER between 2.23 and 4.14. The latter is the prediction of mean-field theory while the former is the value for opening a band gap. As one moves across resonance to the molecule side, the SF-BI transition evolves into the SF-Mott-insulator transition of bosonic molecules. We shall also present the global phase diagram for SF-insulator transition for the BCS-BEC family.     

Fabrication of textured KNNT ceramics by reactive template grain growth using NN templates

Lead-free non-stoichiometric (K_0.470Na_0.545)(Nb_0.55Ta_0.45)O₃ (KNNT) textured ceramics were prepared by a reactive templated grain growth method using NaNbO₃ (NN) templates. The Plate-like NaNbO₃ (NN) templates were synthesized from bismuth layer-structured Bi_2.5Na_3.5Nb₅O₁₈ (BNN) particles by a topochemical microcrystal conversion (TMC) method. Using 5 wt% of NN templates, textured KNNT ceramics were fabricated, and their crystal structure, microstructure, dielectric and piezoelectric properties were compared with non-textured KNNT ceramics prepared by a conventional solid state reaction method. The textured KNNT ceramics exhibited high grain orientation and high dielectric constant. In addition, piezoelectric properties of textured KNNT ceramics were improved, giving a high piezoelectric coefficient d₃₃ = 390 pC/N and piezoelectric coupling coefficient k_p = 0.60.     

Phase-transformation-induced microstructure in lead-free ferroelectric ceramics based on (Bi0.5Na0.5)TiO3–BaTiO3–(Bi0.5K0.5)TiO3

Lead-free ferroelectric ceramics with a morphotropic phase boundary (MPB) composition 85.4% (Bi_0.5Na_0.5)TiO₃–2.6%BaTiO₃–12.0% (Bi_0.5K_0.5)TiO₃ (BNT-BT-BKT at a molar ratio of 85.4: 2.6: 12.0) doped with 0.8?mol% Nb₂O₅ were studied for their crystalline phases and microstructure. The crystalline phases were identified using X-ray diffractometry (XRD) with the contents determined using the Rietveld refinement technique. The phase-transformation-induced microstructure was analyzed using transmission electron microscopy (TEM) and the crystal symmetries were determined using the convergent-beam electron diffraction (CBED) technique. Samples sintered at 1200°C contain a mixture of cubic (C-), tetragonal (T-) and rhombohedral (R-) phases at a ratio of C/T/R?=?56.6: 28.4: 15.0?wt%. Two types of grains are produced: one characterized by a featureless contrast consisting of nano-scale T-domains dispersed in a C-phase matrix; the other a core-shell structure with a shell containing twin and anti-phase-boundary (APB) domains coexisting with a (C?+?T)-phase mixture core. The T- and R-twin boundaries are determined to {111}_T and {110}_R, respectively, and the fault vector for T-APB to R?=?1/2?110]_T. The characteristic microstructure is discussed in terms of the reduction in the point group symmetry and changes in the unit cell volume or the Bravais lattice upon phase transformation among the C-, T- and R-phases. The twin and the APB domains are induced and explained.     

Control and characterization of a multistep unimolecular reaction

Electrons from a scanning tunneling microscope were used to break a C-H bond in a single acetylene (HCCH) molecule adsorbed on Cu(001) at 9 K. The product ethynyl (CCH) was characterized by imaging, inelastic electron tunneling spectroscopy, and variable temperature measurements of the rotation rate. Significant changes in the vibrational spectra and bonding geometry accompanied HCCH dissociation. The ethynyl was further dehydrogenated to form dicarbon (CC). Dissociation studies of the isotopes HCCD and DCCD permitted unambiguous identification of the reaction products.     

Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

The bipolar resistive switching mechanisms of a p-type NiO film and n-type TiO₂ film were examined using local probe-based measurements. Scanning probe-based current–voltage (I–V) sweeps and surface potential/current maps obtained after the application of dc bias suggested that resistive switching is caused mainly by the surface redox reactions involving oxygen ions at the tip/oxide interface. This explanation can be applied generally to both p-type and n-type conducting resistive switching films. The contribution of oxygen migration to resistive switching was also observed indirectly, but only in the cases where the tip was in (quasi-) Ohmic contact with the oxide.