All-optical switching with a biexcitonic double lambda system

A double lambda four-level system could be implemented with biexcitonic transitions on GaAs quantum well. We observed that the phase dependent biexcitonic transition could be explained by interference between one-photon and three-photon transition in a double lambda four-level system. An ultralow-light switch pulse could control 80% of biexcitonic absorption, which demonstrated all-optical switching with biexcitonic double lambda system.     

Spontaneous formation of bags with negative surface energy

We demonstrate within the Ginzburg-Landau model of a confining medium that the surface energy associated with the interface between the normal and the confining phases can be negative, and briefly discuss some consequences of this fact.Dedicated to the memory of M. Gmitro.This work was done at the Niels Bohr Institute Copenhagen, and put into its final form at the Institute of Theoretical Physics, of University of Regensburg. I thank both institutes for their generous hospitality and Professors Poul Olesen and Wolfram Weise for discussions.     

Compact Einstein warped product spaces with nonpositive scalar curvature

We study Einstein warped product spaces. As a result, we prove the following: if is an Einstein warped product space with nonpositive scalar curvature and compact base, then is simply a Riemannian product space.

     

Influence of polymer dielectric surface energy on thin‐film transistor performance of solution‐processed triethylsilylethynyl anthradithiophene (TES‐ADT)

This study investigates the correlation between surface energy of polymer dielectrics and the film morphology, microstructure, and thin‐film transistor performance of solution‐processed 5,11‐bis(triethylsilylethynyl) anthradithiophene (TES‐ADT) films. The low surface energy polyimide (PI) dielectric induced large grains with strong X‐ray reflections for spin‐cast TES‐ADT films in comparison to high surface en‐ ergy poly(4‐vinyl phenol) (PVP) dielectric. Furthermore, thin‐film transistors based on spin‐cast TES‐ADT films on PI dielectric exhibited enhanced electrical performance, small hysteresis, and high stability under bias stress with carrier mobility as high as 0.43 cm²/Vs and a current on/off ratio of 10⁷. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ab initio simulation of the BaZrO3 (0 0 1) surface structure

Electronic and atomic structures of different terminations of the (0 0 1) non-polar orientation of BaZrO₃ surfaces have been studied using first-principles calculations. We found that surface energies at both possible surface terminations, BaO and ZrO₂, were very close. The (0 0 1)-BaO and (0 0 1)-ZrO₂ terminated surfaces have bandgap values smaller than that of a bulk BaZrO₃ crystal. In addition, the relative surface stability has been analyzed as a function of chemical environment.