一种经氟化和热处理在双壁碳纳米管上生成缺陷的方法(英文)

Nanoscale defects in the outer tube to preserve the electrical and optical features of the inner tube can be engineered to exploit the intrinsic properties of double walled carbon nanotubes (DWCNTs) for various promising applications. We demonstrated a selective way to make defects in the outer tube by the fluorination of DWCNTs followed by the thermal detachment of the F atoms at 1000 °C in argon. Fluorinated DWCNTs with different amounts of F atoms were prepared by reacting with fluorine gas at 25, 200, and 400 °C that gave the stoichiometry of CF0.20, CF0.30, and CF0.43, respectively. At the three different temperatures used, we observed preservation of the coaxial morphology in the fluorinated DWCNTs. For the DWCNTs fluorinated at 25 and 200 °C, the strong radial breathing modes (RBMs) of the inner tube and weakened RBMs of the outer tube indicated selective fluorine attachment onto the outer tube. However, the disappearance of the RBMs in the Raman spectrum of the DWCNTs fluorinated at 400 °C showed the introduction of F atoms onto both inner and outer tubes. There was no significant change in the morphology and optical properties when the DWCNTs fluorinated at 25 and 200 °C were thermally treated at 1000 °C in argon. However, in the case of the DWCNTs fluorinated at 400 °C, the recovery of strong RBMs from the inner tube and weakened RBMs from the outer tube indicated the selective introduction of substantial defects on the outer tube while preserving the original tubular shape. The thermal detachment of F atoms from fluorinated DWCNTs is an efficient way to make highly defective outer tubes for preserving the electrical conduction and optical activity of the inner tubes.     

Thermodynamic Control of Domain Swapping by Modulating the Helical Propensity in the Hinge Region of Myoglobin

Domain swapping is an exception to Anfinsen's dogma, and more than one structure can be produced from the same amino acid sequence by domain swapping. We have previously shown that myoglobin (Mb) can form a domain‐swapped dimer in which the hinge region is converted to a helical structure. In this study, we showed that domain‐swapped dimerization of Mb was achieved by a single Ala mutation of Gly at position 80. Multiple Ala mutations at positions 81 and 82 in addition to position 80 facilitated dimerization of Mb by stabilization of the dimeric states. Domain swapping tendencies correlated well with the helical propensity of the mutated residue in a series of Mb mutants with amino acids introduced to the hinge region. These findings demonstrate that a single mutation in the hinge loop to modify helical propensity can control oligomer formation, providing new ideas to create high‐order protein oligomers using domain swapping.     

Quantitative visualization of temperature field in non-luminous flame by flame reaction technique

Abstract  

An experimental technique for measuring a temperature field in an axisymmetric non-luminous flame is developed using the flame reaction technique combined with the inverse Abel transformation. Flame visualization is carried out using alkali metal solution of Potassium (K), which is supplied to a premixed methane/air flame in a form of spray mist. The basic principle of this technique is based on the measurement of local emission intensity distribution visualized by the flame reaction, which is a function of temperature according to the Maxwell–Boltzmann statistics of thermodynamics. The relationship between the local intensity and the temperature is obtained from the calibration study, in which the local intensity is evaluated from the line of sight intensity by the inverse Abel transformation, and the temperature is measured by thermocouple. This technique is successfully applied to the measurement of local temperature distribution in steady and flickering premixed methane/air flame. The temperature field in the flickering flame indicates that the local temperature oscillates periodically with the flickering frequency, and the highest temperature is found along the flame front and in the merging region.     

Out-of-equilibrium Kondo effect in a mesoscopic device

We study the nonequilibrium regime of the Kondo effect in a quantum dot laterally coupled to a narrow wire. We observe a split Kondo resonance when a finite bias voltage is imposed across the wire. The splitting is attributed to the creation of a double-step Fermi distribution function in the wire. Kondo correlations are strongly suppressed when the voltage across the wire exceeds the Kondo temperature. A perpendicular magnetic field enables us to selectively control the coupling between the dot and the two Fermi seas in the wire. Already at fields of order 0.1 T only the Kondo resonance associated with the strongly coupled reservoir survives.     

Nonequilibrium transport through a vertical quantum dot in the absence of spin-flip energy relaxation

We investigate nonequilibrium transport in the absence of spin-flip energy relaxation in a few-electron quantum dot artificial atom. Novel nonequilibrium tunneling processes involving high-spin states, which cannot be excited from the ground state because of spin blockade, and other processes involving more than two charge states are observed. These processes cannot be explained by orthodox Coulomb blockade theory. The absence of effective spin relaxation induces considerable fluctuation of the spin, charge, and total energy of the quantum dot. Although these features are revealed clearly by pulse excitation measurements, they are also observed in conventional dc current characteristics of quantum dots.     

Local chemical state change in Co–O resistance random access memory

Kelvin probe force microscopy (KFM) and conductive atomic force microscopy (C‐AFM) together with micro X‐ray photoelectron spectroscopy (XPS) were performed for the stacking structure comprising of the transition metal oxide Co–O and metal electrode, which exhibits large reproducible resistance switching. The application of the external voltage by the C‐AFM cantilever decreases the resistance of Co–O, which well accords with the non‐polar forming process observed in the Pt/Co–O/Pt trilayer, known as the candidate of resistance random access memory (ReRAM). Furthermore, the KFM and micro XPS experimentally revealed that the local reductive reaction of Co–O possibly nucleates the defect related energy levels which dominates the current conduction in the low resistance state. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)