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221.
G. Giardina G. Fazio A. Lamberto A. I. Muminov A. K. Nasirov U. T. Yakhshiev R. Palamara R. Ruggeri 《Acta Physica Hungarica A》2004,19(1-2):101-108
We study the effect of the entrance channel and the shell structure of reacting massive nuclei on the fusion mechanism and the formation of evaporation residues of heavy and superheavy nuclei. In the framework of the combined dinuclear system concept and advanced statistical model, we analyze the reactions 32S+182W, 48Ti+166Er and 60Ni+154Sm leading to 214Th*, and the reactions 48Ca+248Cm and the 48Ca+249Cf leading to the 296116 and 297118 compound nuclei, respectively. 相似文献
222.
P. Murzyn C. R. Pidgeon P. J. Phillips J. -P. Wells N. T. Gordon T. Ashley J. H. Jefferson T. M. Burke J. Giess M. Merrick B. N. Murdin C. D. Maxey 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):220
We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τs300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τs is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τs in non-degenerate lightly n-type Hg0.78Cd0.22Te of approximately the same band gap as InSb, and find that τs varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τs, imply that the Elliott–Yafet model dominates in these materials. 相似文献
223.
J. Wang G. A. Khodaparast J. Kono T. Slupinski A. Oiwa H. Munekata 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):412
We have used two-color time-resolved magneto-optical Kerr effect spectroscopy to manipulate and detect dynamic processes of spin/magnetic order in a ferromagnetic semiconductor InMnAs. We observed ultrafast photo-induced “softening” (i.e., transient decrease of coercivity) due to spin-polarized transient carriers. This transient softening persists only during the carrier lifetime (2 ps) and returns to its original value as soon as the carriers recombine to disappear. Our data clearly demonstrates that magnetic properties, e.g., coercivity, can be strongly and reversibly modified in an ultrafast manner. We attribute the origin of this unusual phenomenon to carrier-mediated ferromagnetic exchange interactions between Mn ions. We discuss the dependence of data on the pump polarization, pump intensity, and sample temperature. Our observation opens up new possibilities for ultrafast optical manipulation of ferromagnetic order as well as providing a new avenue for studying the dynamics of long-range collective order in strongly correlated many-body systems. 相似文献
224.
M. Missous C. Mitchell J. Sly K. T. Lai R. Gupta S. K. Haywood 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):496
Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In0.84Ga0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated. 相似文献
225.
H. Akimune T. Yamagata S. Nakayama M. Fujiwara K. Fushimi K. Hara K. Y. Hara K. Ichihara K. Kawase K. Matsui K. Nakanishi A. Shiokawa M. Tanaka H. Utsunomiya M. Yosoi 《Physics of Atomic Nuclei》2004,67(9):1721-1725
Trinucleon molecular structures in 6He and 6Be were investigated by using the 6Li(7Li, 7Be)6He reaction at 455 MeV and 6Li(3He, t)6Be reaction at 450 MeV, respectively. Binary decays into t + t from a broad state at E x =18.0±1.0 MeV in 6He and into 3He + 3He from one at E x =18.0±1.2 MeV in 6Be, respectively, were observed by measuring trinucleon cluster decays in coincidence with reaction particles. The branching ratios for binary decay were estimated to be about 0.7 for 6He and 6Be. These large branching ratios show that a trinucleon cluster state exists as an isobaric partner around E x =18 MeV in 6He and 6Be. 相似文献
226.
A. G. Milekhin A. I. Nikiforov M. Yu. Ladanov O. P. Pchelyakov S. Schulze D. R. T. Zahn 《Physics of the Solid State》2004,46(1):92-96
This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO2 layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed. 相似文献
227.
Nanostructure diamond (NSD) film with a hardness as high as 70 GPa and an average surface roughness of 10 nm has been synthesized by the two-step negative substrate bias method combined with post-growth Ar-H2 plasma irradiation. The Ar-H2 plasma irradiation has been confirmed to improve the uniformity of grain size and shape and increase the hardness of the NSD film. 相似文献
228.
P. D. Kim I. A. Turpanov S. V. Stolyar R. S. Iskhakov V. I. Yushkov A. Ya. Beten’kova L. A. Li E. V. Bondareva T. N. Isaeva M. M. Karpenko 《Technical Physics》2004,49(4):431-434
The crystal structure and hysteretic magnetic properties of equiatomic single-crystal CoPt films applied on MgO substrates
by magnetron sputtering, as well as modification of these properties by thermal annealing, are studied. Heat-treated films
of thickness in the range 2<d≤16 nm exhibit perpendicular magnetic anisotropy. A correlation between the crystalline anisotropy constant of the CoPt films
and the order parameter of the LI0 superstructure in these alloys is found. The effect of a single-crystalline MgO substrate on the structure and magnetic properties
of equiatomic CoPt films is revealed. 相似文献
229.
A solution to the phase problem in optics is considered within the context of the analysis of signals changing in time and of the effect of an object under investigation on the probing radiation. The solution is based on the use of a twin-wave interferometer with phase modulation in one of the channels and a spectrometer. The analysis is concerned, in particular, with signals and processes of ultrashort duration. To shift the frequency in the interferometer channel, an electrooptical crystal of ferroelectric perovskite is used as the modulator. Errors of amplitude and phase structures determined are analyzed. 相似文献
230.