Photocatalytic oxidation of propylene with molecular oxygen over highly dispersed titanium, vanadium, and chromium oxides on silica

Photocatalytic oxidation of propylene with molecular oxygen at room temperature was investigated over various silica-supported metal oxides with low loading. The photocatalytic active site is assumed to be the isolated tetrahedrally coordinated metal oxides in the ligand-to-metal charge-transferred state, such as (Mdelta- -OLdelta+). Photocatalytic epoxidation of propylene into propylene oxide was promoted over silica-supported V and Ti oxides at steady state. Over silica-supported Cr oxide, the propylene oxide formation rate was remarkably decreased with the time course in the reaction. The oxidation state and the coordination environment of the supported Ti, V, and Cr oxide species were determined by diffuse reflectance UV-vis spectroscopy (DRS) and electron spin resonance (ESR). During the photocatalytic oxidation, the oxidation state of the Ti4+ species was not varied. On the other hand, the V5+ species was partially reduced to V4+ and the Cr6+ species was successively reduced to Cr5+ and Cr3+. An isotopic tracer study of the C3H6-18O2 reaction suggests the difference of the active oxygen species between TiO2/SiO2 and V2O5/SiO2. The active oxygen species on TiO2/SiO2 is derived from molecular oxygen. On the other hand, the photogenerated products on V2O5/SiO2 incorporate the lattice oxygen of the surface metal oxide species. It is suggested that the kinds of terminal ligand (hydroxyl or oxo) of the tetrahedrally coordinated metal oxides on silica decide the active oxygen species in the photocatalytic oxidation. A photoinduced hole center on the monohydroxyl (SiO)3Ti-OH species activates molecular oxygen that reacts with propylene. In the case of the monooxo (SiO)3V=O and dioxo (SiO)2Cr=O2 species, the photoactivated lattice oxygen (OL-) directly reacts with propylene.     

Reversible photoregulation of helical structures in short peptides under indoor lighting/dark conditions

[reaction: see text] A photochromic cross-linking agent with a spiropyran skeleton was developed for the reversible photoregulation of helical structures in short peptides. The helical contents of the cross-linked peptides could be regulated by ambient light and dark conditions at room temperature. This switching of the helical contents could be repeated several times without substantial loss of any activity.     

Switching of structural order in a cross-linked polymer triggered by the desorption/adsorption of guest molecules

A cross-linked polymer, prepared by the in situ polymerization of a thermotropic columnar liquid crystal, was found to work as a host with a flexible framework, which was reminiscent of intercalation hosts, such as clays, graphites, and coordination polymers. The structural order of the cross-linked polymer was reversibly switched by changing the amount or shape of a guest incorporated in the polymer.     

An in situ M?ssbauer study using synchrotron radiation

We have been developing a system for in situ M?ssbauer studies using synchrotron radiation (SR) to elucidate the mechanism of hydrogenation processes. In the system, samples reacts in a pressure-temperature chamber and SR-based M?ssbauer spectra using variable-frequency nuclear monochromator and energy spectra of inelastic nuclear resonant scattering (NRS) of SR are measured. As a feasibility study, the temperature dependence of the M?ssbauer and inelastic NRS spectra of ⁵⁷Fe in c-GdFe₂H₃ under vacuum were measured. In both spectra, clear differences were observed between 373?K and 573?K. These differences can be interpreted by the change of microscopic environment around Fe at the dehydrogenation. Thus, it is confirmed that this system works well enough to perform the in-situ M?ssbauer study on the dehydrogenation of c-GdFe₂H₃.     

Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy

The electrical and optical properties of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy were systematically investigated. The photoluminescence spectra of Mg-doped a- and c-plane GaN films exhibit strong emissions related to deep donors when Mg doping concentrations are above 1×10²⁰ cm⁻³ and 5×10¹⁹ cm⁻³, respectively. The electrical properties also indicate the existence of compensating donors because the hole concentration decreases at such high Mg doping concentrations. In addition, we estimated the N_D/N_A compensation ratio of a- and c-plane GaN by variable-temperature Hall effect measurement. The obtained results indicate that the compensation effect of the Mg-doped a-plane GaN films is lower than that of the Mg-doped c-plane GaN films.