Rheological characteristics of trimethylolethane hydrate slurry treated with drag-reducing surfactants

Rheological characteristics of trimethylolethane (TME) clathrate–hydrate slurry treated with drag-reducing surfactants were investigated. Friction coefficients and apparent viscosities were measured when the concentration of TME and its hydrate fraction treated with and without drag-reducing surfactants were changed in several steps. From the results, it is found that the surfactant addition causes effective drag reduction in a pipe flow when the hydrate fraction becomes high, while effective drag reduction disappears in the cases of low hydrate fraction. The results of viscosity measurements indicate that the TME molecules disturb the formation of shear-induced structures (SIS) causing drag reduction phenomena. To investigate this interaction between TME and surfactant micelles, the effect of TME concentration on viscosity and relaxation time of solutions was discussed. From this, it was found out that there exists a critical concentration of TME on the formation of SIS and that it becomes larger as shear rate increases. Thus, we conclude that this interaction between TME and micellar structures causes less drag reduction for the cases of low hydrate fraction, while the drag reduction appears in cases of high hydrate fraction because TME concentration in liquid phase becomes small.     

Secondary and auger electron spectra of a Cu-Be alloy

The slow secondary electron spectra corresponding to the copper rich surface and oxidized beryllium surface of Cu-Be alloys are observed after argon ion bombardment and heating treatment of the sample and they are identified by Auger electron spectroscopy.     

Angle-resolved investigation of Auger electrons from Cu and Au adsorbed on W(110)

The angular distribution of Cu M_2,3VV and Au N_6,7VV Auger electrons from Cu and Au mono- and double layers on W(110) is measured with the goal of obtaining information on the contribution of the backscattered wave on the angular distribution of Auger electrons from adsorbed atoms.     

Organized metamaterials comprised of gold nanoneedles in a lattice generated on silicon (100) wafer substrates by interfering femtosecond laser processing

In this paper,we fabricate a lateral phase change memory device composed of a Ge₂Sb₂Te₅ nanowire (GST NW) fully confined in a tungsten electrode nanogap. A SiNx spacer is used not only as etch mask for the fabrication of the GST NW, but also as sacrificial layer for the lift-off process, which makes it feasible to fully confine the GST NW in the metal electrode nanogap. Electrical characterization shows that the device has unprecedentedly low threshold current and SET voltage of only 16 μA and 80 mV, respectively.     

The radiation resistance of the bioburden from medical devices

An extensive study of the radiation resistance of microbial species constituting the bioburden of a number of different medical devices obtained from Japanese medical device manufacturers has been carried out. A standard protocol for determining radiation resistance was used and validated at the fourteen centres involved in the study. Individual microbial isolates from the bioburden obtained from seven different devices manufactured in these centres were studied. A total of 3742 unselected isolates were obtained, of which 197 failed to survive long enough for subsequent radiation resistance studies. The remainder were subjected to an initial screen test to identify those organisms that were sensitive to the lethal effects of radiation with a D₁₀ of < 1.5kGy. The 465 isolates that survived the screen doses were then tested for survival in an incremental series of radiation doses using methods similar to those of Whitby (1979) and Yan and Tallentire(1995). The isolates from “dry” devices were more resistant than those obtained from the one water filled (“wet”) device studied. The overall distribution of radiation resistance among the isolates was considered to be similar to that forming the “Standard Distribution of Resistance” (SDR) included in the ISO International Standard 11137 “Sterilization of Health Care Products — Requirements for validation and routine control — Radiation sterilization”.     

Study by scanning tunneling microscopy of hydrogen adsorption and desorption on Si111 7 x 7 at room temperature and at high temperature

An overview is given on the use of scanning tunneling microscopy (STM) for investigation of the adsorption of hydrogen on Si(111)7 x 7 both at room temperature and at elevated temperature to finally obtain a hydrogen-saturated surface of Si(111). The initial stages are characterized by high reactivity of Si adatoms of the 7 x 7 structure. After adsorption of hydrogen on the more reactive sites in the beginning of the adsorption experiments a regular pattern, which is different for room and elevated temperature, is observed for the less reactive sites. In agreement with previous work, local 1 x 1 periodicity of the rest atom layer and the presence of di- and trihydride clusters is observed for hydrogen-saturated surface. STM has also been used to characterize surfaces from which the hydrogen atoms have been removed by thermal desorption. Finally, tip-induced desorption by large positive sample-bias voltages and by increasing the tunneling current will be described.     

Far infrared anastigmatic Czerny-Turner monochromator for stressed Ge∶Ga photoconductor experiments

A new far infrared grating monochromator of Czerny-Turner type has been devised and constructed which has an output optical system comprising two small spherical mirrors to compensate astigmatism of the Czerny-turner system. Anastigmatism of the system has been confirmed by ray tracing. The far infrared monochromator covers 100–240 m wavelengths and is useful to measure spectral response of stressed GeGa photoconductors having response up to 200 m, which have been studied for applications to far infrared astronomical and atmospheric observations by balloons.     

Dynamic observations of the formation of thin Cu layers on clean and hydrogen-terminated Si(1 1 1) surfaces

The growth of Cu on the clean and hydrogen-terminated Si(1 1 1) surfaces is studied in situ by low-energy electron microscopy (LEEM). The dependence of the growth of the “5×5” layer on the clean Si(1 1 1) 7×7 surface upon the deposition temperature is investigated by combining LEEM with LEED. After completion of the “5×5” layer not only the regular-shaped three-dimensional islands reported before are observed but also irregular shaped more two-dimensional islands. On the hydrogen-terminated Si(1 1 1) surface the formation of the “5×5” structure is suppressed and nano-scale islands form preferentially at the step edges and domain boundaries. This is attributed to the enhancement of the surface migration of Cu atoms by the elimination of the surface dangling bonds.     

Homogeneous SiGe crystals grown by using the traveling liquidus-zone method

It is indispensable to estimate a diffusion coefficient in a solution zone in order to grow a homogeneous crystal by using the traveling liquidus-zone (TLZ) method. To estimate the diffusion coefficient of Ge in the SiGe solution zone, result of a two-dimensional numerical simulation is compared with an experimental result. From the comparison, the diffusion coefficient is estimated to be 9.5×10⁻⁵ cm²/s. By using this coefficient, a sample translation rate for obtaining a homogeneous SiGe crystal is determined. By translating samples with appropriate rates, homogeneous Si_0.5Ge_0.5 crystals are successfully grown. The typical Ge composition is 0.496±0.006 for more than 13 mm long. The experimental result shows the homogeneity of ±1.2% in the mole fraction. This deviation corresponds to the variation of less than ±0.03% in the lattice constant. Since this variation is negligibly small, the homogeneity is excellent. Thus it is found that the TLZ method is the universal growth technique, which is applicable to the crystal growth of not only the III–V compounds but also the IV–IV compounds.     

Development characteristics of fluctuating velocity field of drag-reducing surfactant solution flow in a duct

Development behavior of the fluctuating velocity of surfactant solution in a duct has been studied experimentally. The concentration of surfactants was kept constant at 1,000 ppm, mean velocity at 0.78 m/s and fluid temperature at 15 °C. Using laser Doppler velocimetry, the fluctuating streamwise velocity distributions at six cross sections, which ranged from 14 to 112 times of hydraulic diameter of the duct, were measured. From the results, the fluctuating structures of surfactant solution flow are observed to have structures different from that of turbulent water flow in the developing field. The wavelet analysis reveals that the high-level fluctuation of surfactant solution flow is characterized by periodicity rather than irregularity around the position where the fluctuation intensity takes a peak value and that the period and the scale of periodic flow structures are related to the relaxation times of the fluid. This indicates that the high-level fluctuation is deeply related to the elastic instability and has a different generation mechanism from that of turbulence observed in a Newtonian turbulent flow.