A novel BEDT-TTF-based purely organic magnetic conductor, α - (BEDT - TTF)2(TEMPO - N(CH3)COCH2SO3) ⋅ 3H2O

A new BEDT-TTF-based salt with an organic free radical TEMPO has been prepared. The salt consists of alternate layers of conducting and magnetic sheets, between which are short S(BEDT-TTF) …O(TEMPO) contacts. The magnetic susceptibility is well modelled by the combination of a 2D Heisenberg and a Curie-Weiss model with and .     

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.     

Widely tunable terahertz-wave generation using an N-benzyl-2-methyl-4-nitroaniline crystal

Widely tunable terahertz (THz)-wave generation using difference frequency generation (DFG) in an organic N-benzyl-2-methyl-4-nitroaniline (BNA) crystal was demonstrated. To our knowledge, this is the first report of THz-wave generation by BNA DFG. Large, high-quality single crystals of BNA (phi 8 mm x 30 mm) were grown using the vertical Bridgman method. The nonlinear optical (NLO) coefficient d(33) of the BNA crystal is approximately 234 pm/V, which is the largest value reported for any yellow NLO material. The collinear phase-matching condition of the type-0 configuration is satisfied using a 0.7-1 microm band pump wavelength. We generated THz waves using an organic BNA crystal; the generation range is 0.1-15 THz.     

High-resolution GaP Terahertz Spectrometer and Its Application to Detect Defects in Gamma-irradiated Glucose Crystal

We developed high-resolution GaP THz signal generator using Cr:Forsterite lasers with gratings as both a pump and a signal beam for difference-frequency generation. A line width of less than 500 MHz and a wide tunable frequency range (0.6–6.2 THz) provide sufficient resolution for measuring materials with sharp absorption bands using the generator as the light source for a THz spectrometer. This is suitable for materials such as gases or solid samples at low temperatures. We demonstrated the detection of defects in organic materials, as they appear as slight deviations in the absorption frequency in the THz region.     

Abnormal adsorption behavior of dimethyl disulfide on gold surfaces

Adsorption of dimethyl disulfide (DMDS) on gold colloidal nanoparticle surfaces has been examined to check its binding mechanism. Differently from previous results, DMDS molecules adsorbed on the gold surface at high concentration showed the S–S stretching band at 500 cm⁻¹ in surface-enhanced Raman scattering (SERS) spectra, which indicates the presence of intact adsorption of DMDS molecules. However, it was found that the S–S bond of disulfides was easily cleaved on the gold surface at low concentration. These behaviors were not observed for diethyl disulfide (DEDS) or diphenyl disulfide (DPDS). Our results indicate that DMDS molecules with the shortest alkyl chains on the gold surface can be inserted into self-assembled monolayers (SAMs) without the S–S bond cleavage during self-assembly due to insufficient lateral van der Waals interaction and the low adsorption activity of disulfides, whereas DEDS with longer alkyl chains or DPDS with the weak disulfide bond dissociation energy would not. These unusual DMDS adsorption behaviors were examined by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). We also compared the bonding dissociation energy of the S–S bonds of various disulfides by means of a density functional theory (DFT) calculation.     

Universal generation of higher-order multiringed Laguerre-Gaussian beams by using a spatial light modulator

Laguerre-Gaussian (LG) beams of various higher-order radial modes are generated by using a reflective phase-only liquid crystal on silicon (LCOS) spatial light modulator (SLM). Because of the LCOS SLM's phase-modulation characteristic of a wide spatial bandwidth, a phase modulation scheme effectively generates higher-order LG beams of up to the fifth-order radial mode. We also perform correlation analyses between the observed and the theoretical two-dimensional mode profiles to universally obtain correlation coefficients of more than 0.946, which suggest mode generations of high quality.     

Search for CP violation in the decay B0-->D*+/-D-/+

We report a search for CP-violating asymmetry in B0-->D(*+/-)D-/+ decays. The analysis employs two methods of B0 reconstruction: full and partial. In the full reconstruction method all daughter particles of the B0 are required to be detected; the partial reconstruction technique requires a fully reconstructed D- and only a slow pion from the D(*+)-->D0pi(+)(slow) decay. From a fit to the distribution of the time interval corresponding to the distance between two B meson decay points we calculate the CP-violating parameters and find the significance of nonzero CP asymmetry to be 2.7 standard deviations.     

Reduction of dislocation density and improvement of optical quality in ZnO layers by MgO-buffer annealing

Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3 × 10⁹ to 1.9 × 10⁹ cm⁻² by annealing MgO-buffer prior to the growth of ZnO. The intensity of free exciton emission from the sample with MgO-buffer annealing was almost twice of that from the sample without annealing, while the deep level emission from the sample with MgO-buffer annealing was about 1/3 of that without annealing. The MgO-buffer annealing improves optical quality of overgrown ZnO films.     

Magnetic structures of exchange bias Ni/FeF2(1 1 0) interface

Electronic and magnetic structures of ferromagnetic (FM)/antiferromagnetic (AFM), Ni/FeF₂(1 1 0), with a compensated AFM interface are investigated by using the full-potential linearized augmented plane-wave method. We find that magnetic structures at the AFM interface are perturbed by a contact with the FM material, where the superexchange interaction through the interface F excites and induces a small net moment at the AFM interface. These results predicted may play an important role for explaining the exchange bias in this system, and rule out the exchange bias mechanisms with the spin-flop coupling and the magnetic moment reorientation.