Design and Analysis of InGaN-GaN Modulation-Doped Field-Effect Transistors (MODFETs) for 90 GHz Operations

A Modulation-Doped Field-Effect Transistor (MODFET) structure having quantum wire channel realized in InGaN-GaN material system is presented. This paper presents design and analysis of a novel one-dimensional Modulation-Doped Field-Effect transistor (1D MODFET) in InGaN-GaN material system for microwave and millimeter wave applications. An analytical model predicting the transport characteristics of the proposed MODFET device is also presented. Analytical results of the current-voltage and transconductance characteristics are presented. The unity-current gain cutoff frequency (f _T) of the proposed device is computed as a function of the gate voltage V _G. The results are compared with two-dimensional GaN/AlGaN MODFET and HFET devices. The analytical model also predicts that 0.25 m channel length devices will extend the use of InGaN-GaN MODFETs to above 90GHz.     

Phase transition behavior of highly (100) textured sol-gel-derived Ba<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript> thin films

We have investigated the relations between microstructure and dielectric properties in order to fabricate sol-gel-derived highly (100) oriented Ba_0.5Sr_0.5TiO₃ (BST 50/50) thin films with properties comparable to those of the bulk material. For the first time, we were able to fabricate BST thin films which exhibited the orthorhombic-to-tetragonal transition in addition to the commonly observed tetragonal-to-cubic transition. We were successful in explaining the commonly observed degradation of the dielectric behavior of BST thin films, when compared to that of the bulk material, in terms of grain size, compositional inhomogeneity (measured in terms of Sr/Ba ratio) between the grain bulk and grain boundary, and mechanical stresses. PACS 77.55.+f; 77.22Gm; 77.80.Bh; 77.80.Dj     

Surface plasma waves over bismuth-vacuum interface

A surface plasma wave (SPW) over bismuth-vacuum interface has a signature of mass anisotropy of free electrons. For SPW propagation along the trigonal axis there is no birefringence. The frequency cutoff of SPW lies in the far infrared region and can be accessed using free electron laser. The damping rate of waves at low temperatures is low. The surface plasma wave may be excited by an electron beam of current ∼100 mA propagating parallel to the interface in its close proximity.     

Identification of potential inhibitors of coronavirus hemagglutinin-esterase using molecular docking,molecular dynamics simulation and binding free energy calculation

Molecular Diversity - The pandemic outbreak of the Corona viral infection has become a critical global health issue. Biophysical and structural evidence shows that spike protein possesses a high...     

Axisymmetric vibrations of an isotropic elastic non-homogeneous circular plate of linearly varying thickness

Free axisymmetric vibrations of an isotropic, elastic, non-homogeneous circular plate of linearly varying thickness have been studied on the classical theory of plates. The non-homogeneity of the material of the plate is assumed to arise due to the variation of Young's modulus and density with the radius vector whereas Poisson's ratio is assumed to remain constant. The governing differential equation of motion is solved by the method of Frobenius. The transverse displacement of the plate has been expressed as a power series in terms of the radial co-ordinate. The frequency parameters corresponding to the first two modes of vibration have been computed for different values of the non-homogeneity parameter and taper constant and for clamped and simply supported edge conditions of the plate. A comparison between the numerical results for homogeneous and non-homogeneous material of the plate is also made.     

High pressure raman scattering in Pb5Ge3O11

The pressure dependence of various phonon modes has been investigated through the ferro-paraelectric phase transition. Most mode frequencies harden before levelling off above the phase transition. Mode Grüneisen parameters are estimated from the pressure dependence of phonon frequencies.     

Persistence in financial markets

Persistence is studied in a financial context by mapping the time evolution of the values of the shares quoted on the London Financial Times Stock Exchange 100 index (FTSE 100) onto Ising spins. By following the time dependence of the spins, we find evidence for power law decay of the proportion of shares that remain either above or below their 'starting' values. As a result, we estimate a persistence exponent for the underlying financial market to be θ_f∼0.5.