Simulation of Birefringence and Absorption in InGaAs-GaAs Multiple Quantum Well Acoustooptic Modulators Operating Near 980 nm

This paper presents the simulation of surface acoustic wave (SAW)-induced absorption coefficient and refractive index change in InGaAs-GaAs multiple quantum well (MQW) structures operating near 980 nm. The exciton problem is solved in two dimensional momentum space to include the non-axial effect due to strain induced valance band mixing and nonparabolicity. The optical absorption coefficient and refractive index changes near the band gap in the MQWs are calculated as a function of SAW power.     

Effects of circuit loss and space charge in gyro-travelling-wave tubes

A modified dispersion relation of a gyro-TWT using a cylindrical waveguide excited in aT E _mn -mode is derived incorporating the effect of the transverse space charge forces. The relation is subsequently studied considering the circuit losses and interpreted for the conventional TWT-type gain equation. The second harmonic operation using theT E ₀₂ cylindrical waveguide mode resonated with the second beam-harmonic mode is found to be more sensitive to the Pierce's loss and space-charge parameters for a gyro-TWT than the fundamental operation using theT E ₀₁ cylindrical waveguide mode resonated with the first beam-harmonic mode. It is established that these parameters substantially influence the device gain and must be considered for the prediction of its accurate value. Furthermore, these parameters when properly controlled can also improve the device bandwidth.     

A comparative study of the luminescence characteristics of polymineral fine grains and coarse-grained K- and Na-rich feldspars

The IRSL and post-IR IRSL (pIRIR) signal characteristics of polymineral fine grains are investigated and compared with those of K- and Na-rich feldspar extracts. TL signal loss after IR and pIRIR stimulations occurs mainly at around 320 °C for polymineral and Na-feldspar samples and around 410 °C for K-feldspar samples, when a preheat temperature of 250 °C for 60 s is used. After preheating to a higher temperature (320 °C for 60 s) all samples show a TL reduction around 410 °C in the blue detection window. Pulse annealing experiments for IRSL and pIRIR signals for preheats between 320 °C and 500 °C indicate that the signal stabilities are similar among the different feldspar types, when a higher preheat temperature (>320 °C) is used. Thermal activation energies for IRSL and pIRIR signals are largest in K-feldspar and smallest in polymineral fine grains, in both blue and UV detection windows for both fast time-resolved (TR) and continuous wave (CW) signals. These results suggest that IRSL and pIRIR signals in polymineral fine grains originate mainly from Na-feldspar grains; these signals are less thermally stable than those from K-feldspar, but a more stable signal (presumably from K-feldspar grains) can be obtained using a higher preheat temperature.     

Stimulated luminescence emission from localized recombination in randomly distributed defects

We present a new kinetic model describing localized electronic recombination through the excited state of the donor (d) to an acceptor (a) centre in luminescent materials. In contrast to the existing models based on the localized transition model (LTM) of Halperin and Braner (1960 Phys. Rev. 117 408-15) which assumes a fixed d?→?a tunnelling probability for the entire crystal, our model is based on nearest-neighbour recombination within randomly distributed centres. Such a random distribution can occur through the entire volume or within the defect complexes of the dosimeter, and implies that the tunnelling probability varies with the donor-acceptor (d-a) separation distance. We first develop an 'exact kinetic model' that incorporates this variation in tunnelling probabilities, and evolves both in spatial as well as temporal domains. We then develop a simplified one-dimensional, semi-analytical model that evolves only in the temporal domain. An excellent agreement is observed between thermally and optically stimulated luminescence (TL and OSL) results produced from the two models. In comparison to the first-order kinetic behaviour of the LTM of Halperin and Braner (1960 Phys. Rev. 117 408-15), our model results in a highly asymmetric TL peak; this peak can be understood to derive from a continuum of several first-order TL peaks. Our model also shows an extended power law behaviour for OSL (or prompt luminescence), which is expected from localized recombination mechanisms in materials with random distribution of centres.     

Electrocatalytic sensing of omeprazole

Ionics - A novel, simple, sensitive, and highly selective omeprazole sensor based on the synergistic effect of polyaniline (PANI) and multiwalled carbon nanotubes (MWCNTs) has been developed. The...     

An off-axis 50-period electromagnet wiggler for millimeter-wavefree-electron laser experiment

An off-axis 50-period planar, short-wavelength (~10 mm) electromagnet wiggler is developed and characterized for millimeter-wave generation using a sheet electron beam in a free-electron laser experiment. Three-dimensional (3-D) magnetic field measurements of the electromagnet wiggler have been carried out. The measured wiggler magnetic field is 0.16 G/A ±3% while the mean value of wiggler wavelength is 0.998±3% cm. Due to off-axis arrangement of poles, there is a magnetic mirror field in the X direction, to confine the sheet beam     

High Performance (fT~500GHZ) In0.52Al0.48As/In0.53Ga0.47As/InP Quantum Wire MODFETs Employing Asymmetric Coupled-Well Channels

A coupled-well InAlAs/InGaAs quantum wire MODFET structure is proposed, for which simulations predict improved frequency performance (>500 GHz), over a wider range of V_g, as compared to well/wire devices with a standard MODFET heterointerface. A comparison of several transverse potential well profiles, obtained by varying the placement of a thin barrier within a 100 Å finite well, is presented. In all cases, the quantum wires consist of a 0.1 m long channel and a 150 Å finite-square-well lateral profile. It has been found that the peak of the electron distribution for the first confined state, as measured from the heterointerface, changes dramatically depending on the location of the thin barrier. For quantum wire structures, realized in the lattice matched system of In_0.52Al_0.48As/In_0.53Ga_0.47As/InP, a change in the barrier location of 25 Å is accompanied by a shift in the carrier peak of more than 40 Å (~20 Å closer to or farther from the spacer-well interface than in the standard MODFET profile). Implications of this are reflected in the current-voltage characteristics (I_d-V_d) and frequency responses (f_T-V_g) of the proposed structures.     

The perturbative proton form factor reexamined

We recalculate the proton Dirac form factor based on the perturbative QCD factorization theorem, which includes Sudakov suppression. The evolution scale of the proton wave functions and the infrared cutoffs for the Sudakov re-summation are carefully chosen such that the soft divergences from large coupling constants are diminished and perturbative QCD predictions are stabilized. We find that the King–Sachrajda model for the proton wave function leads to results which are in better agreement with experimental data than those from the Chernyak–Zhitnitsky wave function. Received: 27 November 1998 / Published online: 7 April 1999     

Effect of illumination on the space charge limited current in organic bulk heterojunction diodes

Current–voltage (J–V) characteristics of organic bulk heterojunction diodes based on an interpenetrating network of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C₆₁-butyric acid methyl esters (PCBM) have been studied in the dark and under halogen lamp illumination. The diodes contained 1:1 and 1:0.6 weight ratios of P3HT and PCBM. For both diodes the currents measured in dark (J _d , commonly known as the dark current) in forward bias are found to agree with the space charge limited current (SCLC). The illuminated current consists of a current due to applied voltage (J _da ) and the light generated current (J _L ). J _da  extracted from the illuminated current agrees well with Shockley’s diffusion and recombination current. This observation shows that illumination changes the SCLC into Shockley’s diffusion and recombination current. The forward current under illumination has been observed to be greater than the dark current, which is contrary to the photo–voltaic (PV) theory. This result is well explained by the change of SCLC into Shockley’s diffusion and recombination current. Former address of S.C. Jain: IMEC, Kapeldreef 75, 3001 Leuven, Belgium.