Simulation of photon antibunching

We prove a correspondence in between the influence of nonlinear interaction on photon number fluctuations and the influence of an appropriately designed filter device on intensity fluctuations in light fields. This correspondence allows us to study the change of the degree of photon bunching in nonlinear processes by performing an analog experiment, in which we measure intensity distributions instead of photon number distributions. Results are reported both for an enhancement and for a reduction of the widths of the initial distributions, depending on the type of the interaction as well as on the type of the initial distribution.Work supported by Deutsche Forschungsgemeinschaft within the program Optik und Information     

Autoradiographische Untersuchungen zur Vermisechung von Baustoffkomponenten

Die Feinverteilung des Kalkes im Kalk-Quarzsand-Gemisch ist eine notwendige Bedingung fur hohe erreichbare Festigkeit der Silikatbaustoffe. Vergleiehende Untersuchungen über die Kalkverteilung an neutronenaktivierten feinkörnigen Baustoffproben mit Hilfe von Szintillationsmessungen des ⁴⁷Ca-Gehaltes und mittels autoradiographischer Darstellung der Kalkverteilung in kleinen Prüfkörpern unter Ausnützung der relativ weichen β-Strahlung des ⁴⁵Ca ergaben, daβ die autoradiographischen Aussagen über die Homogenität der Proben am besten mit den Festigkeitsiwerten der Prüfkörper korrespondieren.     

The radiation damage in high-dose argon-implanted silicon

Measurements of the depth profiles of disorder produced in silicon by argon ions implanted at energies of 20-300 keV and with a fluence of 10¹⁶ to 10¹⁷/cm² were made by profiling the oxide growth rate.     

Study of the three-dimensional Ising model on film geometry with the cluster Monte Carlo method

Topological properties of clusters are used to extract critical parameters. This method is tested for the bulk properties ofd=2 percolation and thed=2, 3 Ising model. For the latter we obtain an accurate value of the critical temperatureJ/k _B T _c=0.221617(18). In the case of thed=3 Ising model with film geometry the critical value of the surface coupling at the special transitions is determined as J_1c/J=1.5004(20) together with the critical exponents ₁ ^m =0.237(5) and=0.461(15).