A study of the fluorescence lifetime of Pr3+ in SBN40

The fluorescence lifetime τ₁ of Pr³⁺ doped in the ferroelectric solid solution SNB40 (Ba_0.4Sr_0.6Nb₂O₆) was measured ar various temperatures. The fluorescence lifetime decreases gradually with increasing temperature. Furthermore, an anomalous increase of τ₁ was observed at a specific temperature. The fluorescence linewidth and the peak wavelength of fluorescence also showed an anomalous change at this temperature. It is likely that this phenomenon is due to the phase transition of the host crystal SBN40.     

Temperature stabilized optical waveguide modulator

A low drive-voltage optical modulator using a Ti-diffused UNbO₃ optical waveguide has been fabricated. Stabilization against ambient temperature change was realized by using a miniature halfwave plate. The halfwave voltage, 3 dB bandwidth, optical insertion loss and extinction ratio were 3·8 V (at 1·06m wavelength), 850 MHz, 10 dB and 13 dB, respectively. A reduction scheme for the optical absorption caused by metallic electrodes, and an analysis of the modulator high frequency response are also reported.     

Invar effects on some iron-base amorphous alloys

The thermal expansion and magnetic properties of Fe-B and Fe-P amorphous alloys prepared from melts have been investigated. These amorphous alloys show distinct Invar characteristics. heir magnetic properties are also very similar to those of Fe-Ni crystalline Invar alloys; that is, the high-field susceptability and forced-volume magnetostriction are remarkably large, the magnetic moment per Fe atom does not increase linearly, the Curie temperature decreases with a decrease in concentration of B or P, and their reduced their magnetization curves are much flatter than those of crystalline pure Fe.     

Recoil-limited laser cooling of 87Sr atoms near the Fermi temperature

A dynamic magneto-optical trap, which relies on the rapid randomization of population in Zeeman substates, has been demonstrated for fermionic strontium atoms on the 1S0-3P1 intercombination transition. The obtained sample, 1x10(6) atoms at a temperature of 2 microK in the trap, was further Doppler cooled and polarized in a far-off resonant optical lattice to achieve 2 times the Fermi temperature.     

Highly resolved scanning tunneling microscopy study of Si(0 0 1) surfaces flattened in aqueous environment

A surface preparation method with fine SiO₂ particles in water is developed to flatten Si(0 0 1) surfaces on the nanometer scale. The flattening performance of Si(0 0 1) surfaces after the surface preparation method is investigated by scanning tunneling microscopy. The observed surface is so flat that 95% of the view area (100 × 100 nm²) is composed of only three atomic layers, namely, one dominant layer occupying 50% of the entire area and two adjacent layers. Furthermore, a magnified image shows the outermost Si atoms regularly distributed along the 〈1 1 0〉 direction on terraces.     

Method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions

X-ray photoelectron spectroscopy (XPS) measurements under bias can observe low density interface states for metal-oxide-semiconductor (MOS) diodes with low densities. This method can give energy distribution of interface states for ultrathin insulating layers for which electrical measurements cannot be performed due to a high density leakage current. During the XPS measurements, a bias voltage is applied to the rear semiconductor surface with respect to the ∼3 nm-thick front platinum layer connected to the ground, and the bias voltage changes the occupation of interface states. Charges accumulated in the interface states shift semiconductor core levels at the interface, and thus the analysis of the bias-induced shifts of the semiconductor core levels measured as a function of the bias voltage gives energy distribution of interface states. In the case of Si-based MOS diodes, the energy distribution and density of interface states strongly depend on the atomic density of silicon dioxide (SiO₂) layers and the interfacial roughness, respectively. All the observed interface state spectra possess peaked-structures, indicating that they are due to defect states. An interface state peak near the Si midgap is attributable to isolated Si dangling bonds at the interface, while those above and below the midgap to Si dangling bonds interacting weakly with Si or oxygen atoms in the SiO₂ layers. A method of the elimination of interface states and defect states in Si using cyanide solutions has been developed. The cyanide method simply involves the immersion of Si in KCN solutions. Due to the high Si-CN bond energy of ∼4.5 eV, the bonds are not ruptured at 800 °C and upon irradiation. The cyanide treatment results in the improvement of the electrical characteristics of MOS diodes and solar cells.     

Raman scattering from GaAs-InxGa1−xAs strained-layer superllatices

Measurements of Raman scattering were performed on GaAs-In_xGa_1?xAs strained-layer superlattices, grown by molecular beam epitaxy, with lattice periods ranging from 30 ～ 250 Å and In concentrations x, 0.22 and 0.37. Only one GaAs-like longitudinal optical phonon peak was observed in each strained-layer superlattice, in contrast to the well-known result that two peaks were observed in GaAs-Al_xGa_1?xAs superlattices. The GaAs-like phonon frequencies shifted from those of bulk GaAs to those of bulk In_xGa_1?xAs alloys as the ratio of the one-layer thickness of In_xGa_1?xAs to the lattice period increases from zero to one. We conclude that the GaAs-like phonon mode is a uniform mode of the whole strained-layer superlattice and the phonon frequency is determined by the averaged In concentration.     

用长气体靶研究22Na+α共振散射

在日本东京大学CRIB 次级束装置上,用长气体靶开展了22Na+ α共振散射的厚靶实验研究。针对长气体靶实验中的两体运动学重构问题,提出了一套包括构建空间复杂几何关系、计算能量损失以及反应运动学的逐事件分析方法;对22Na+α共振散射的实验数据进行了重构分析,得到了E_c.m. = 4.2 ~ 5.4 MeV 区间22Na( α,α ) 的激发函数,从实验的激发函数中观测到了复合核26Al 5 个较为明显的共振峰。鉴于26Al 共振态的衰变模式比较复杂,本工作发现的26Al新共振态的能级性质有待进一步的理论分析。The 22Na+α resonant scattering is studied via a conventional thick target inverse kinematic method with an extended gas target. A data analysis method is proposed for the two-body reaction kinematic reconstruction, in which the spatial geometry, the reaction kinematics and the energy losses are considered. The experimental data of 22Na+ αresonant scattering have been thus reconstructed, and the excitation function is obtained in the energy interval of Ec.m. =4.2~5.4 MeV. Five resonant states in 26Al are observed in the experimental excitation function. Since several decay modes coexist for the observed 26Al resonant states, multi-channel theoretical analysis is thus needed to reveal their structure and decay features.     

A molecular dynamics simulation of ultrathin oxide films onsilicon: Growth by thermal O atoms and sputtering by 100 eV Ar+ ions

Molecular dynamics was applied to study the growth and sputtering of ultrathin oxide films on (100) Si surfaces. A multibody potential which stabilized the Si/SiO₂ interface was used for this purpose. Oxide growth by exposure to O atoms was found to follow Langmuir-type kinetics with unity initial sticking coefficient of O and saturation coverage of around four monolayers, in agreement with experimental data. Sputtering of an ultrathin oxide film on silicon by 100 eV Ar⁺ ions was simulated to study ion-assisted surface cleaning. Ion irradiation was found to promote restructuring of the surface into oxide islands, as observed experimentally. Island formation was accompanied with an increase in surface roughness. The evolution of the surface state with ion dose was predicted quantitatively