Near-thermal reactions of Au(+)(1S,3D) with CH3X (X = F,Cl)

Reactions of Au(+)((1)S) and Au(+)((3)D) with CH(3)F and CH(3)Cl have been carried out in a drift cell in He at a pressure of 3.5 Torr at both room temperature and reduced temperatures in order to explore the influence of the electronic state of the metal on reaction outcomes. State-specific product channels and overall two-body rate constants were identified using electronic state chromatography. These results indicate that Au(+)((1)S) reacts to yield an association product in addition to AuCH(2)(+) in parallel steps with both neutrals. Product distributions for association vs HX elimination were determined to be 79% association/21% HX elimination for X = F and 50% association/50% HX elimination when X = Cl. Reaction of Au(+)((3)D) with CH(3)F also results in HF elimination, which in this case is thought to produce (3)AuCH(2)(+). With CH(3)Cl, Au(+)((3)D) reacts to form AuCH(3)(+) and CH(3)Cl(+) in parallel steps. An additional product channel initiated by Au(+)((3)D) is also observed with both methyl halides, which yields CH(2)X(+) as a higher-order product. Kinetic measurements indicate that the reaction efficiency for both Au(+) states is significantly greater with CH(3)Cl than with CH(3)F. The observed two-body rate constant for depletion of Au(+)((1)S) by CH(3)F represents less than 5% of the limiting rate constant predicted by the average dipole orientation model (ADO) at room temperature and 226 K, whereas CH(3)Cl reacts with Au(+)((1)S) at the ADO limit at both room temperature and 218 K. Rate constants for depletion of Au(+)((3)D) by CH(3)F and CH(3)Cl were measured at 226 and 218 K respectively, and indicate that Au(+)((3)D) is consumed at approximately 2% of the ADO limit by CH(3)F and 69% of the ADO limit by CH(3)Cl. Product formation and overall efficiency for all four reactions are consistent with previous experimental results and available theoretical models.     

Bias-dependent spin relaxation in a -InAs/AlSb 2DES

Manipulation of electron spin is a critical component of many proposed semiconductor spintronic devices. One promising approach utilizes the Rashba effect by which an applied electric field can be used to reduce the spin lifetime or rotate spin orientation through spin–orbit interaction. The large spin–orbit interaction needed for this technique to be effective typically leads to fast spin relaxation through precessional decay, which may severely limit device architectures and functionalities. An exception arises in [1 1 0]-oriented heterostructures where the crystal magnetic field associated with bulk inversion asymmetry lies along the growth direction and in which case spins oriented along the growth direction do not precess. These considerations have led to a recent proposal of a spin-FET that incorporates a [1 1 0]-oriented, gate-controlled InAs quantum well channel. We report measurements of the electron spin lifetime as a function of applied electric field in a [1 1 0]-InAs 2DES. Measurements made using an ultrafast, mid-IR pump-probe technique indicate that the spin lifetime can be reduced from its maximum to minimum value over a range of less than 0.2 V per quantum well at room temperature.     

Second harmonic excitation spectroscopy of silver nanoparticle arrays

Frequency-scanned excitation profiles of coherent second harmonic generation (SHG) were measured for silver nanoparticle arrays prepared by nanosphere lithography. The frequency of the fundamental beam did not coincide with the localized surface plasmon resonance (LSPR) of the nanoparticles and was tuned so that the coherent second harmonic (SH) emission was in the region of the LSPR at 720-750 nm. The SH emission from the arrays was compared with a smooth silver film to identify an enhancement of SH emission efficiency that peaks near approximately 650 nm for nanoparticles 50 nm in height. The polarization and orientation dependence of this enhancement suggests that it is related to a dipolar LSPR mode polarized normal to the plane of the substrate. Linear extinction spectra are dominated by in-plane dipoles and do not show this weak out-of-plane LSPR mode. The nanoparticle arrays are truncated tetrahedrons symmetrically oriented by nanosphere lithography to cancel SH from in-plane dipoles which allows observation of the weak out-of-plane component.     

Determination of the Nitrogen Atom Density in the Afterglow of a Nitrogen and Helium,Nonequilibrium, Atmospheric Pressure Plasma

Three methods have been examined for evaluating the concentration of nitrogen atoms in the afterglow of a nonequilibrium, helium-stabilized, atmospheric pressure plasma. These are nitric oxide titration, absolute emission intensity of N₂(B ³_g) and temporal decay of the N₂(B ³_g) emission. To employ the second method, the rate constants for the recombination of N atoms into N₂(B ³_g), at different vibrational levels of the B state, were determined. The third newly developed method has three advantages over the other two techniques: (1) it can predict the N-atom density for the entire afterglow, (2) it does not require calibration of the N₂(B ³_g) emission intensity, and (3) it does not disturb the gas flow. According to these measurements, the atmospheric pressure plasma produced a high density of nitrogen atoms, exceeding 4.0×10¹⁵ cm^–3 at the edge of the discharge for 10 Torr N₂ in 745 Torr He at 375 K and 15.5 W/cm³.